SKM75GD123DL [SEMIKRON]
Trench IGBT Modules; 沟道IGBT模块
| 型号： | SKM75GD123DL |
| 厂家： | 
SEMIKRON INTERNATIONAL |
| 描述： | Trench IGBT Modules |
| 文件： | 总4页 (文件大小：648K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SKM 75GD123D
- 2 34 5*ꢖ ꢇꢅꢌꢏꢘꢘ ꢋꢈꢕꢏꢑꢚꢄꢘꢏ ꢘꢆꢏꢐꢄ'ꢄꢏꢒ
Absolute Maximum Ratings
Symbol Conditions
ꢐ
Values
Units
IGBT
ꢛ*6ꢃ
/377
:4 ꢉ47ꢓ
ꢛ
1
%
%
-ꢐ 2 34 ꢉ97ꢓ 5*
ꢈꢆ 2 / ꢗꢘ
*
/77
1
*;ꢁ
ꢛ<6ꢃ
= 37
ꢛ
-ꢊ>ꢖ ꢉ-ꢘꢈꢎ
ꢓ
-ꢂ?6;1-%ꢂꢔ @ -ꢘꢈꢎ
& A7 BBB C /47 ꢉ/34ꢓ
5*
ꢛꢄꢘꢋꢌ
1*ꢖ / ꢗꢄꢅB
3477
ꢛ
Inverse diode
TM
%
-ꢐ 2 34 ꢉ97ꢓ 5*
:4 ꢉ47ꢓ
/77
1
1
SEMITRANS
3
(
%
ꢈꢆ 2 / ꢗꢘ
(;ꢁ
%
ꢈꢆ 2 /7 ꢗꢘD ꢘꢄꢅBD -> 2 /47 5*
447
1
(ꢃꢁ
Trench IGBT Modules
- 2 34 5*ꢖ ꢇꢅꢌꢏꢘꢘ ꢋꢈꢕꢏꢑꢚꢄꢘꢏ ꢘꢆꢏꢐꢄ'ꢄꢏꢒ
Characteristics
Symbol Conditions
IGBT
ꢐ
min.
typ.
max. Units
SKM 75GD123DL
SKM 75GD123D
SKM 75GDL123D
ꢛ<6ꢉꢈꢕꢓ
ꢛ<6 2 ꢛ*6ꢖ %* 2 3 ꢗ1
Aꢖ4
4ꢖ4
#ꢖ4
ꢛ
ꢗ1
ꢛ
%
ꢛ<6 2 7ꢖ ꢛ*6 2 ꢛ*6ꢃꢖ -> 2 34 ꢉ/34ꢓ 5*
-> 2 34 ꢉ/34ꢓ 5*
7ꢖA
/ꢖ3
*6ꢃ
ꢛ*6ꢉ-ꢂꢓ
ꢑ*6
/ꢖA ꢉ/ꢖ#ꢓ
33 ꢉ07ꢓ
/ꢖ# ꢉ/ꢖ9ꢓ
39 ꢉ09ꢓ
ꢛ<6 2 /4 ꢛꢖ -> 2 34 ꢉ/34ꢓ 5*
ꢗE
ꢛ*6ꢉꢘꢍꢈꢓ
%*ꢅꢋꢗ 2 47 1ꢖ ꢛ<6 2 /4 ꢛꢖ ꢐꢕꢄꢆ ꢌꢏꢊꢏꢌ
3ꢖ4 ꢉ0ꢖ/ꢓ
0 ꢉ0ꢖ:ꢓ
ꢛ
*
ꢇꢅꢒꢏꢑ 'ꢋꢌꢌꢋꢚꢄꢅꢎ ꢐꢋꢅꢒꢄꢈꢄꢋꢅꢘ
0ꢖ0
7ꢖ4
Aꢖ0
7ꢖ#
7ꢖ0
#7
ꢅ(
ꢅ(
ꢅ(
ꢅ!
ꢄꢏꢘ
Features
*
ꢛ<6 2 7ꢖ ꢛ*6 2 34 ꢛꢖ ' 2 / ꢁ!F
ꢋꢏꢘ
ꢁꢂꢃ ꢄꢅꢆꢇꢈ ꢉꢊꢋꢌꢈꢍꢎꢏ ꢐꢋꢅꢈꢑꢋꢌꢌꢏꢒꢓ
ꢔ ꢐꢕꢍꢅꢅꢏꢌꢖ ꢕꢋꢗꢋꢎꢏꢅꢏꢋꢇꢘ ꢃꢄ
ꢙꢋꢚ ꢄꢅꢒꢇꢐꢈꢍꢅꢐꢏ ꢐꢍꢘꢏ
ꢛꢏꢑ ꢌꢋꢚ ꢈꢍꢄꢌ ꢐꢇꢑꢑꢏꢅꢈ ꢚꢄꢈꢕ ꢌꢋꢚ
*
7ꢖ33
ꢀ
ꢀ
ꢀ
ꢀ
ꢑꢏꢘ
ꢙ*6
;
ꢑꢏꢘBꢖ ꢈꢏꢑꢗꢄꢅꢍꢌ&ꢐꢕꢄꢆ -ꢐ2 34 ꢉ/34ꢓ 5*
ꢛ** 2 #77 ꢛꢖ %*ꢅꢋꢗ 2 47 1
ꢗE
**GC66G
ꢈꢒꢉꢋꢅꢓ
ꢈꢑ
ꢈꢒꢉꢋ''ꢓ
ꢈ'
AA
4#
/77
/77
477
/77
ꢅꢘ
ꢅꢘ
ꢅꢘ
ꢅꢘ
ꢈꢏꢗꢆꢏꢑꢍꢈꢇꢑꢏ ꢒꢏꢆꢏꢅꢒꢏꢅꢐꢏ
;<ꢋꢅ 2 ;<ꢋ'' 2 33 Eꢖ -> 2 /34 5*
ꢛ<6 2 = /4 ꢛ
097
:7
!ꢄꢎꢕ ꢘꢕꢋꢑꢈ ꢐꢄꢑꢐꢇꢄꢈ ꢐꢍꢆꢍ"ꢄꢌꢄꢈ ꢖ ꢘꢏꢌꢈ
ꢌꢄꢗꢄꢈꢄꢅꢎ ꢈꢋ # $ %
ꢀ
ꢐꢅꢋꢗ
6ꢋꢅ ꢉ6ꢋ''
ꢓ
9 ꢉ4ꢓ
ꢗH
ꢙꢍꢈꢐꢕ&ꢇꢆ 'ꢑꢏꢏ
(ꢍꢘꢈ ) ꢘꢋ'ꢈ ꢄꢅꢊꢏꢑꢘꢏ *ꢍꢌ ꢒꢄꢋꢒꢏꢘ
%ꢘꢋꢌꢍꢈꢏꢒ ꢐꢋꢆꢆꢏꢑ "ꢍꢘꢏꢆꢌꢍꢈꢏ ꢇꢘꢄꢅꢎ
+*, +ꢄꢑꢏꢐꢈ ,ꢋꢅꢒꢄꢅꢎ -ꢏꢐꢕꢅꢋꢌꢋꢎ
ꢙꢍꢑꢎꢏ ꢐꢌꢏꢍꢑꢍꢅꢐꢏ ꢉ. ꢗꢗꢓ ꢍꢅꢒ
ꢐꢑꢏꢏꢆꢍꢎꢏ ꢒꢄꢘꢈꢍꢅꢐꢏ ꢉ/0 ꢗꢗꢓ
ꢀ
ꢀ
ꢀ
Inverse diode
ꢛ( 2 ꢛ6*
ꢛꢉ-ꢂꢓ
ꢑ-
%
(ꢅꢋꢗ 2 47 1D ꢛ<6 2 7 ꢛD -> 2 34 ꢉ/34ꢓ 5*
3 ꢉ/ꢖ9ꢓ
/ꢖ/
3ꢖ4
/ꢖ3
33
ꢛ
ꢛ
-> 2 34 ꢉ/34ꢓ 5*
-> 2 34 ꢉ/34ꢓ 5*
/9
ꢗE
1
ꢀ
%
%(ꢅꢋꢗ 2 47 1D -> 2 34 ꢉ /34 ꢓ 5*
30 ꢉ04ꢓ
3ꢖ0 ꢉ:ꢓ
;;ꢁ
Iꢑꢑ
6ꢑꢑ
ꢒꢄJꢒꢈ 2 977 1JKꢘ
ꢛ<6 2 ꢛ
K*
Typical Applications
ꢗH
ꢃꢚꢄꢈꢐꢕꢏꢒ ꢗꢋꢒꢏ ꢆꢋꢚꢏꢑ ꢘꢇꢆꢆꢌꢄꢏꢘ
+* ꢘꢏꢑꢊꢋ ꢍꢅꢒ ꢑꢋ"ꢋꢈ ꢒꢑꢄꢊꢏꢘ
-ꢕꢑꢏꢏ ꢆꢕꢍꢘꢏ ꢄꢅꢊꢏꢑꢈꢏꢑꢘ 'ꢋꢑ 1*
ꢗꢋꢈꢋꢑ ꢘꢆꢏꢏꢒ ꢐꢋꢅꢈꢑꢋꢌ
ꢀ
ꢀ
ꢀ
Thermal characteristics
;
ꢆꢏꢑ %<,-
7ꢖ03
7ꢖ#
LJM
LJM
ꢈꢕꢉ>&ꢐꢓ
;
ꢆꢏꢑ %ꢅꢊꢏꢑꢘꢏ +ꢄꢋꢒꢏ
ꢈꢕꢉ>&ꢐꢓ+
;
ꢆꢏꢑ ꢗꢋꢒꢇꢌꢏ
7ꢖ74
LJM
ꢈꢕꢉꢐ&ꢘꢓ
ꢃꢚꢄꢈꢐꢕꢄꢅꢎ ꢉꢅꢋꢈ 'ꢋꢑ ꢌꢄꢅꢏꢍꢑ ꢇꢘꢏꢓ
ꢀ
Mechanical data
ꢁꢘ
ꢈꢋ ꢕꢏꢍꢈꢘꢄꢅN ꢁ4
ꢔꢗ
ꢔꢗ
ꢁꢈ
ꢈꢋ ꢈꢏꢑꢗꢄꢅꢍꢌꢘ
A
4
ꢚ
/:4
ꢎ
GD
GDL
1
26-09-2005 RAA
© by SEMIKRON
SKM 75GD123D
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 6 Typ. gate charge characteristic
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 5 Typ. transfer characteristic
2
26-09-2005 RAA
© by SEMIKRON
SKM 75GD123D
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Transient thermal impedance of IGBT
Zthp(j-c) = f (tp); D = tp/tc = tp*f
Fig. 10 Transient thermal impedance of FWD
Zthp(j-c) = f (tp); D = tp/tc = tp*f
Fig. 11 CAL diode forward characteristic
Fig. 12 Typ. CAL diode peak reverse recovery current
3
26-09-2005 RAA
© by SEMIKRON
SKM 75GD123D
Fig. 13 Typ. CAL diode recovered charge
UL Recognized
Dimensions in mm
File no. E 63 532
*ꢍꢘꢏ + #:
<+
*ꢍꢘꢏ + :0
<+ꢙ
*ꢍꢘꢏ + 4#ꢍ
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee
expressed or implied is made regarding delivery, performance or suitability.
4
26-09-2005 RAA
© by SEMIKRON
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