SKM800GA125D_09 [SEMIKRON]
Ultrafast IGBT Modules; 超高速IGBT模块
| 型号： | SKM800GA125D_09 |
| 厂家： | 
SEMIKRON INTERNATIONAL |
| 描述： | Ultrafast IGBT Modules |
| 文件： | 总5页 (文件大小：964K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SKM 800GA125D
ꢍ
6 147ꢓ' ꢇꢆ%ꢅꢈꢈ ꢂꢗꢚꢅ!ꢙꢊꢈꢅ ꢈꢛꢅ"ꢊ#ꢊꢅ/
Absolute Maximum Ratings
Symbol Conditions
IGBT
"ꢖꢈꢅ
Values
Units
ꢒꢓꢔꢉ
ꢍ8 6 14 7ꢓ
+1,,
:(,
ꢒ
5
5
ꢏꢓ
ꢍ8 6 +4, 7ꢓ
ꢍ"ꢖꢈꢅ 6 14 7ꢓ
ꢍ"ꢖꢈꢅ 6 ;, 7ꢓ
4<,
ꢏꢓ*=
ꢒꢐꢔꢉ
ꢗꢛꢈ"
ꢏꢓ*=61)ꢏꢓꢆꢂꢃ
+1,,
> 1,
+,
5
ꢒ
ꢒꢓꢓ 6 (,, ꢒ? ꢒꢐꢔ 3 1, ꢒ? ꢍ8 6 +14 7ꢓ
ꢒꢓꢔꢉ @ +1,, ꢒ
Aꢈ
®
SEMITRANS 4
Inverse Diode
Ultrafast IGBT Modules
ꢏB
ꢍ8 6 +4, 7ꢓ
ꢍ"ꢖꢈꢅ 6 14 7ꢓ
ꢍ"ꢖꢈꢅ 6 ;, 7ꢓ
:1,
4,,
5
5
ꢏB*=
ꢏBꢉ=
ꢏB*=61)ꢏBꢆꢂꢃ
+1,,
4:,,
5
5
SKM 800GA125D
ꢗꢛ 6 +, ꢃꢈ? ꢈꢊꢆC
ꢍ8 6 +4, 7ꢓ
Module
ꢏꢗꢕ*=ꢉꢘ
4,,
ꢎ D, CCC E+4, ꢕ+14ꢘ
+14
5
7ꢓ
7ꢓ
ꢒ
ꢍ
8
ꢍꢈꢗꢄ
ꢒꢊꢈꢂ%
5ꢓ' + ꢃꢊꢆC
D,,,
Features
ꢁꢂꢃꢂꢄꢅꢆꢅꢂꢇꢈ ꢉꢊ
ꢋꢌꢍꢎꢏꢐꢑꢍ
ꢀ
ꢀ
ꢀ
ꢍ
6 147ꢓ' ꢇꢆ%ꢅꢈꢈ ꢂꢗꢚꢅ!ꢙꢊꢈꢅ ꢈꢛꢅ"ꢊ#ꢊꢅ/
Characteristics
Symbol Conditions
IGBT
"ꢖꢈꢅ
ꢒ
ꢙꢊꢗꢚ ꢛꢂꢈꢊꢗꢊ ꢅ ꢗꢅꢃꢛꢅ!ꢖꢗꢇ!ꢅ
min.
typ.
max. Units
ꢓꢔꢕꢈꢖꢗꢘ
"ꢂꢅ##ꢊ"ꢊꢅꢆꢗ
ꢁꢊꢄꢚ ꢈꢚꢂ!ꢗ "ꢊ!"ꢇꢊꢗ "ꢖꢛꢖ$ꢊ%ꢊꢗ&' ꢈꢅ%#
ꢀ
ꢒꢐꢔꢕꢗꢚꢘ
ꢒꢐꢔ 6 ꢒꢓꢔ' ꢏꢓ 6 1D ꢃ5
D'4
4'4
,'1
('4
,'(
ꢒ
ꢃ5
ꢃ5
ꢒ
%ꢊꢃꢊꢗꢊꢆꢄ ꢗꢂ ( ) ꢏ
ꢓ
ꢏꢓꢔꢉ
ꢒꢐꢔ 6 , ꢒ' ꢒꢓꢔ 6 ꢒꢓꢔꢉ
ꢍ8 6 14 7ꢓ
ꢍ8 6 +14 7ꢓ
ꢍ8 6 14 7ꢓ
ꢍ8 6 +14 7ꢓ
ꢍ8 6 147ꢓ
Typical Applications
*ꢅꢈꢂꢆꢖꢆꢗ ꢊꢆ ꢅ!ꢗꢅ!ꢈ ꢇꢛ ꢗꢂ +,, -ꢁ.
ꢏꢆ/ꢇ"ꢗꢊ ꢅ ꢚꢅꢖꢗꢊꢆꢄ
ꢔ%ꢅ"ꢗ!ꢂꢆꢊ" ꢙꢅ%/ꢅ!ꢈ ꢖꢗ #ꢈꢙ 0 1,
ꢒꢓꢔ,
+'4
+':
1';
<';
<'1
D
+':4
ꢀ
ꢀ
ꢀ
ꢒ
!
ꢒꢐꢔ 6 +4 ꢒ
<'<
4'D
ꢃF
ꢃF
ꢒ
ꢓꢔ
-ꢁ.
ꢍ8 6 +147ꢓ
ꢒꢓꢔꢕꢈꢖꢗꢘ
ꢏꢓꢆꢂꢃ 6 (,, 5' ꢒꢐꢔ 6 +4 ꢒ ꢍ8 6 147ꢓ"ꢚꢊꢛ%ꢅ C
ꢍ8 6 +147ꢓ"ꢚꢊꢛ%ꢅ C
<':4
Remarks
ꢒ
ꢏ
3 4,, 5 %ꢊꢃꢊꢗꢅ/ $& ꢗꢅ!ꢃꢊꢆꢖ%ꢈ
ꢀ
ꢀ
2ꢓ
ꢓꢊꢅꢈ
<:
ꢆB
ꢆB
ꢍꢖ-ꢅ "ꢖ!ꢅ ꢂ# ꢂ ꢅ!ꢎ ꢂ%ꢗꢖꢄꢅ "ꢖꢇꢈꢅ/
$& ꢈꢗ!ꢖ& ꢊꢆ/ꢇ"ꢗꢖꢆ"ꢅꢈ
ꢓꢂꢅꢈ
ꢒꢓꢔ 6 14' ꢒꢐꢔ 6 , ꢒ
# 6 + =ꢁ.
4'(
ꢓ!ꢅꢈ
1';
+':
ꢆB
G
*
ꢍ8 6 7ꢓ
ꢐꢊꢆꢗ
ꢗ/ꢕꢂꢆꢘ
ꢗ!
ꢆꢈ
ꢆꢈ
ꢃH
ꢆꢈ
ꢆꢈ
*
ꢐꢂꢆ 6 ,'4 F
ꢐꢂ## 6 ,'4 F
ꢒꢓꢓ 6 (,,ꢒ
ꢏꢓ6 (,,5
ꢔꢂꢆ
ꢗ/ꢕꢂ##ꢘ
ꢗ#
;;
D;
*
ꢍ8 6 +14 7ꢓ
ꢒꢐꢔ 6 > +4ꢒ
ꢔꢂ##
ꢃH
*
ꢛꢅ! ꢏꢐꢑꢍ
,',<
IJK
ꢗꢚꢕ8ꢎ"ꢘ
GA
1
28-04-2009 NOS
© by SEMIKRON
SKM 800GA125D
Characteristics
Symbol Conditions
min.
typ.
1'<
max. Units
ꢒB 6 ꢒꢔꢓ
ꢏBꢆꢂꢃ 6 (,, 5? ꢒꢐꢔ 6 , ꢒ
ꢍ8 6 14 7ꢓ"ꢚꢊꢛ%ꢅ C
ꢍ8 6 +14 7ꢓ"ꢚꢊꢛ%ꢅ C
ꢍ8 6 14 7ꢓ
1'4
1'<
+'<
+',4
1
ꢒ
1'+
+'+
,'L
1
ꢒ
ꢒB,
ꢒ
ꢍ8 6 +14 7ꢓ
ꢍ8 6 14 7ꢓ
ꢒ
!
ꢃF
ꢃF
B
ꢍ8 6 +14 7ꢓ
ꢍ8 6 14 7ꢓ
1
1'+
ꢏ**=
M!!
ꢏB 6 (,, 5
<:,
;<
5
®
Aꢓ
SEMITRANS 4
ꢔ!!
ꢒꢐꢔ 6 , ꢒ? ꢒꢓꢓ 6 (,, ꢒ
ꢛꢅ! /ꢊꢂ/ꢅ
1;
ꢃH
*
,',:
1,
IJK
ꢗꢚꢕ8ꢎ"ꢘ2
Ultrafast IGBT Modules
Module
Nꢓꢔ
ꢆꢁ
ꢃF
ꢃF
*
!ꢅꢈC' ꢗꢅ!ꢃꢊꢆꢖ%ꢎ"ꢚꢊꢛ
ꢍ"ꢖꢈꢅ6 14 7ꢓ
ꢍ"ꢖꢈꢅ6 +14 7ꢓ
,'+;
,'11
ꢓꢓOEꢔꢔO
SKM 800GA125D
*
ꢛꢅ! ꢃꢂ/ꢇ%ꢅ
,',<;
4
IJK
ꢋꢃ
ꢋꢃ
ꢄ
ꢗꢚꢕ"ꢎꢈꢘ
=
ꢗꢂ ꢚꢅꢖꢗ ꢈꢊꢆ- =(
ꢗꢂ ꢗꢅ!ꢃꢊꢆꢖ%ꢈ =(ꢕ=Dꢘ
<
ꢈ
=
1'4 ꢕ+'+ꢘ
4 ꢕ1ꢘ
<<,
ꢗ
ꢙ
Features
ꢁꢂꢃꢂꢄꢅꢆꢅꢂꢇꢈ ꢉꢊ
ꢋꢌꢍꢎꢏꢐꢑꢍ
ꢀ
ꢀ
ꢀ
ꢒ
ꢙꢊꢗꢚ ꢛꢂꢈꢊꢗꢊ ꢅ ꢗꢅꢃꢛꢅ!ꢖꢗꢇ!ꢅ
ꢓꢔꢕꢈꢖꢗꢘ
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
"ꢂꢅ##ꢊ"ꢊꢅꢆꢗ
ꢁꢊꢄꢚ ꢈꢚꢂ!ꢗ "ꢊ!"ꢇꢊꢗ "ꢖꢛꢖ$ꢊ%ꢊꢗ&' ꢈꢅ%#
ꢀ
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
%ꢊꢃꢊꢗꢊꢆꢄ ꢗꢂ ( ) ꢏ
ꢓ
Typical Applications
*ꢅꢈꢂꢆꢖꢆꢗ ꢊꢆ ꢅ!ꢗꢅ!ꢈ ꢇꢛ ꢗꢂ +,, -ꢁ.
ꢏꢆ/ꢇ"ꢗꢊ ꢅ ꢚꢅꢖꢗꢊꢆꢄ
ꢔ%ꢅ"ꢗ!ꢂꢆꢊ" ꢙꢅ%/ꢅ!ꢈ ꢖꢗ #ꢈꢙ 0 1,
-ꢁ.
ꢀ
ꢀ
ꢀ
Remarks
ꢏ
3 4,, 5 %ꢊꢃꢊꢗꢅ/ $& ꢗꢅ!ꢃꢊꢆꢖ%ꢈ
ꢀ
ꢀ
2ꢓ
ꢍꢖ-ꢅ "ꢖ!ꢅ ꢂ# ꢂ ꢅ!ꢎ ꢂ%ꢗꢖꢄꢅ "ꢖꢇꢈꢅ/
$& ꢈꢗ!ꢖ& ꢊꢆ/ꢇ"ꢗꢖꢆ"ꢅꢈ
GA
2
28-04-2009 NOS
© by SEMIKRON
SKM 800GA125D
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 6 Typ. gate charge characteristic
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 5 Typ. transfer characteristic
3
28-04-2009 NOS
© by SEMIKRON
SKM 800GA125D
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Transient thermal impedance of IGBT and diode
Fig. 10 CAL diode forward characteristic
Fig. 11 CAL diode peak reverse recovery current
Fig. 12 Typ. CAL diode recovered charge
4
28-04-2009 NOS
© by SEMIKRON
SKM 800GA125D
UL Recognized
File no. E 63 532
ꢓꢖꢈꢅ 2 4L
ꢓꢖꢈꢅ 2 4L
ꢐ5
5
28-04-2009 NOS
© by SEMIKRON
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