SKYPER32R_0701 [SEMIKRON]
IGBT Driver Core; IGBT驱动器的核心
| 型号： | SKYPER32R_0701 |
| 厂家： | 
SEMIKRON INTERNATIONAL |
| 描述： | IGBT Driver Core |
| 文件： | 总16页 (文件大小：630K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SKYPER 32 R ...
Absolute Maximum Ratings
Symbol Conditions
Values
($
Units
8
8
ꢄꢆꢆꢌꢔ ꢖꢃꢌꢅꢉꢏꢋ ꢆꢐꢒꢛꢉꢐꢔ
ꢎꢊꢆꢄꢅ ꢍꢒꢏꢊꢉꢌ ꢖꢃꢌꢅꢉꢏꢋ )@ꢒꢏꢈ*
ꢎꢊꢆꢄꢅ ꢍꢒꢏꢊꢉꢌ ꢖꢃꢌꢅꢉꢏꢋ )Bꢃꢂ*
=ꢄꢅꢆꢄꢅ ꢆꢋꢉꢘ ꢇꢄꢐꢐꢋꢊꢅ
8ꢒ@
8 A %-.
8
8ꢒB
51ꢗ ' %-.
8
ꢎꢃꢄꢅ7"C/
ꢎꢃꢄꢅC8ꢛꢉ9
ꢓꢛꢉ9
(,
,%
C
=ꢄꢅꢆꢄꢅ ꢉꢖꢋꢐꢉꢏꢋ ꢇꢄꢐꢐꢋꢊꢅ
;ꢉ90 ꢍꢂꢒꢅꢇꢈꢒꢊꢏ ꢓꢐꢋDꢄꢋꢊꢇꢔ
ꢛC
ꢘ@E
8
,%
8#"
#ꢃꢌꢌꢋꢇꢅꢃꢐ ꢋꢛꢒꢅꢅꢋꢐ ꢖꢃꢌꢅꢉꢏꢋ ꢍꢋꢊꢍꢋ ꢉꢇꢐꢃꢍꢍ
ꢅꢈꢋ ꢎ56ꢁ (*
(2%%
ꢑꢖꢙꢑꢅ
<ꢉꢅꢋ ꢃꢓ ꢐꢒꢍꢋ ꢉꢊꢑ ꢓꢉꢌꢌ ꢃꢓ ꢖꢃꢌꢅꢉꢏꢋ ꢍꢋꢇꢃꢊꢑꢉꢐꢔ
ꢅꢃ ꢆꢐꢒꢛꢉꢐꢔ ꢍꢒꢑꢋ
,%
ꢘ8ꢙ>ꢍ
TM
SKYPER
8ꢒꢍꢃꢌꢎ=
8ꢒꢍꢃꢌ7ꢗ
8ꢒꢍꢃꢌ(3
ꢎꢍꢃꢌꢉꢅꢒꢃꢊ ꢅꢋꢍꢅ ꢖꢃꢌꢅꢉꢏꢋ ꢒꢊꢆꢄꢅ ' ꢃꢄꢅꢆꢄꢅ )C#-
ꢐꢛꢍ- 3ꢍ* 3*
+%%%
(,%%
(,%%
8
8
8
7ꢉꢐꢅꢒꢉꢌ ꢑꢒꢍꢇꢈꢉꢐꢏꢋ ꢋ9ꢅꢒꢊꢇꢅꢒꢃꢊ ꢖꢃꢌꢅꢉꢏꢋ- ꢐꢛꢍ-
IGBT Driver Core
?
7ꢗF(%ꢆ# .*
ꢎꢍꢃꢌꢉꢅꢒꢃꢊ ꢅꢋꢍꢅ ꢖꢃꢌꢅꢉꢏꢋ ꢃꢄꢅꢆꢄꢅ ( ' ꢃꢄꢅꢆꢄꢅ 3
)C#- ꢐꢛꢍ- 3ꢍ* 3*
<
;ꢒꢊꢒꢛꢄꢛ ꢐꢉꢅꢒꢊꢏ ꢓꢃꢐ <5ꢃꢊ
(-,
(-,
3-, +*
G
G
5ꢃꢊꢛꢒꢊ
SKYPER 32 R
<
;ꢒꢊꢒꢛꢄꢛ ꢐꢉꢅꢒꢊꢏ ꢓꢃꢐ <5ꢃꢓꢓ
5ꢃꢓꢓꢛꢒꢊ
?
;ꢉ90 ꢐꢉꢅꢒꢊꢏ ꢓꢃꢐ ꢃꢄꢅꢆꢄꢅ ꢇꢈꢉꢐꢏꢋ ꢆꢋꢐ ꢆꢄꢌꢍꢋ
=ꢆꢋꢐꢉꢅꢒꢊꢏ ꢅꢋꢛꢆꢋꢐꢉꢅꢄꢐꢋ
>#
H#
Preliminary Data
ꢃꢄꢅꢙꢆꢄꢌꢍꢋ
ꢁꢃꢆ
' +% 000 A &,
ꢁꢍꢅꢏ
ꢅꢃꢐꢉꢏꢋ ꢅꢋꢛꢆꢋꢐꢉꢅꢄꢐꢋ
' +% 000 A &,
H#
Features
ꢁ I 3, H#- ꢄꢊꢌꢋꢍꢍ ꢃꢅꢈꢋꢐꢂꢒꢍꢋ ꢍꢆꢋꢇꢒꢓꢒꢋꢑ
ꢁꢂꢃ ꢃꢄꢅꢆꢄꢅ ꢇꢈꢉꢊꢊꢋꢌꢍ
ꢎꢊꢅꢋꢏꢐꢉꢅꢋꢑ ꢆꢃꢅꢋꢊꢅꢒꢉꢌ ꢓꢐꢋꢋ ꢆꢃꢂꢋꢐ
ꢍꢄꢆꢆꢌꢔ
ꢕꢊꢑꢋꢐ ꢖꢃꢌꢅꢉꢏꢋ ꢆꢐꢃꢅꢋꢇꢅꢒꢃꢊ
ꢗꢐꢒꢖꢋ ꢒꢊꢅꢋꢐꢌꢃꢇꢘ ꢅꢃꢆ ꢙ ꢚꢃꢅꢅꢃꢛ
ꢗꢔꢊꢉꢛꢒꢇ ꢍꢈꢃꢐꢅ ꢇꢒꢐꢄꢇꢒꢅ ꢆꢐꢃꢅꢋꢇꢅꢒꢃꢊ
ꢈꢄꢅ ꢑꢃꢂꢊ ꢒꢊꢆꢄꢅ
!ꢉꢒꢌꢄꢐꢋ ꢛꢉꢊꢉꢏꢋꢛꢋꢊꢅ
Characteristics
ꢀ
ꢀ
ꢉ
Symbol Conditions
min.
(+-+
&%
typ.
(,
max. Units
8
ꢄꢆꢆꢌꢔ ꢖꢃꢌꢅꢉꢏꢋ ꢆꢐꢒꢛꢉꢐꢔ ꢍꢒꢑꢋ
(,-$
8
ꢛC
ꢛC
8
ꢎ
ꢄꢆꢆꢌꢔ ꢇꢄꢐꢐꢋꢊꢅ ꢆꢐꢒꢛꢉꢐꢔ ꢍꢒꢑꢋ )ꢊꢃ ꢌꢃꢉꢑ*
ꢄꢆꢆꢌꢔ ꢇꢄꢐꢐꢋꢊꢅ ꢆꢐꢒꢛꢉꢐꢔ ꢍꢒꢑꢋ )ꢛꢉ90*
ꢎꢊꢆꢄꢅ ꢍꢒꢏꢊꢉꢌ ꢖꢃꢌꢅꢉꢏꢋ ꢃꢊꢙꢃꢓꢓ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
=
+,%
8ꢒ
(, ꢙ %
8ꢒꢁA
8ꢒꢁ'
ꢎꢊꢆꢄꢅ ꢅꢈꢐꢋꢍꢈꢃꢌꢑ ꢖꢃꢌꢅꢉꢏꢋ )@ꢒꢏꢈ*
ꢎꢊꢆꢄꢅ ꢅꢈꢐꢋꢍꢈꢃꢌꢑ ꢖꢃꢌꢅꢉꢏꢋ )Bꢃꢂ*
ꢎꢊꢆꢄꢅ ꢐꢋꢍꢒꢍꢅꢉꢊꢇꢋ )ꢍꢂꢒꢅꢇꢈꢒꢊꢏ ꢍꢒꢏꢊꢉꢌꢍ*
(3-.
8
+-$
8
<
(%
ꢘG
ꢘG
ꢒꢊ
ꢎ"# $%%$&'( )ꢇꢌꢒꢛꢉꢅꢋ* +%ꢙ%&,ꢙ,$-
ꢎꢊꢅꢋꢐꢊꢉꢌ ꢆꢄꢌꢌ'ꢄꢆ ꢐꢋꢍꢒꢍꢅꢉꢊꢇꢋ ꢍꢈꢄꢅ ꢑꢃꢂꢊ
ꢒꢊꢆꢄꢅ ),8 ꢌꢃꢏꢒꢇ*
.-.
ꢊꢃ ꢇꢃꢊꢑꢋꢊꢍꢉꢅꢒꢃꢊ ꢉꢊꢑ ꢊꢃ ꢑꢐꢒꢆꢆꢒꢊꢏ
ꢂꢉꢅꢋꢐ ꢆꢋꢐꢛꢒꢅꢅꢋꢑ- ꢊꢃꢊ'ꢇꢃꢐꢐꢃꢍꢒꢖꢋ-
ꢇꢌꢒꢛꢉꢅꢋ ꢇꢌꢉꢍꢍ ./. ꢉꢇꢇ0 "1$%23(
85)ꢃꢊ*
85)ꢃꢓꢓ*
ꢓC ꢎ#
ꢁꢄꢐꢊ ꢃꢊ ꢏꢉꢅꢋ ꢖꢃꢌꢅꢉꢏꢋ ꢃꢄꢅꢆꢄꢅ
ꢁꢄꢐꢊ ꢃꢓꢓ ꢏꢉꢅꢋ ꢖꢃꢌꢅꢉꢏꢋ ꢃꢄꢅꢆꢄꢅ
Cꢍꢒꢇ ꢍꢔꢍꢅꢋꢛ ꢍꢂꢒꢅꢇꢈꢒꢊꢏ ꢓꢐꢋDꢄꢋꢊꢇꢔ
ꢎꢊꢆꢄꢅ'ꢃꢄꢅꢆꢄꢅ ꢅꢄꢐꢊ'ꢃꢊ ꢆꢐꢃꢆꢉꢏꢉꢅꢒꢃꢊ ꢅꢒꢛꢋ
ꢎꢊꢆꢄꢅ'ꢃꢄꢅꢆꢄꢅ ꢅꢄꢐꢊ'ꢃꢓꢓ ꢆꢐꢃꢆꢉꢏꢉꢅꢒꢃꢊ ꢅꢒꢛꢋ
"ꢐꢐꢃꢐ ꢒꢊꢆꢄꢅ'ꢃꢄꢅꢆꢄꢅ ꢆꢐꢃꢆꢉꢏꢉꢅꢒꢃꢊ ꢅꢒꢛꢋ
"ꢐꢐꢃꢐ ꢐꢋꢍꢋꢅ ꢅꢒꢛꢋ
A (,
' 2
8
8
&
;@E
>ꢍ
>ꢍ
>ꢍ
>ꢍ
>ꢍ
ꢆ!
ꢏ
ꢅꢑ)ꢃꢊ*ꢎ=
ꢅꢑ)ꢃꢓꢓ*ꢎ=
ꢅꢑ)ꢋꢐꢐ*
(-(
(-(
Typical Applications
ꢗꢐꢒꢖꢋꢐ ꢓꢃꢐ ꢎ56ꢁ ꢛꢃꢑꢄꢌꢋꢍ ꢒꢊ
ꢚꢐꢒꢑꢏꢋ ꢇꢒꢐꢇꢄꢒꢅꢍ ꢒꢊ ꢇꢈꢃꢆꢆꢋꢐꢍ-
ꢒꢊꢖꢋꢐꢅꢋꢐ ꢑꢐꢒꢖꢋꢍ- ꢕ7 ꢉꢊꢑ
ꢂꢋꢌꢑꢒꢊꢏ ꢒꢊꢖꢋꢐꢅꢋꢐꢍ
,-+
2-J
ꢀ
ꢅꢆ"<<<" "ꢁ
ꢅꢁꢗ
J
.
ꢁꢃꢆ'6ꢃꢅ ꢎꢊꢅꢋꢐꢌꢃꢇꢘ ꢗꢋꢉꢑ ꢁꢒꢛꢋ
#ꢃꢄꢆꢌꢒꢊꢏ ꢇꢉꢆꢉꢇꢒꢅꢉꢊꢇꢋ ꢆꢐꢒꢛꢉꢐꢔ ꢍꢋꢇꢃꢊꢑꢉꢐꢔ
ꢂꢋꢒꢏꢈꢅ
#
(3
3&
ꢆꢍ
ꢂ
ꢗ# ꢚꢄꢍ ꢖꢃꢌꢅꢉꢏꢋ ꢄꢆ ꢅꢃ (3%% 8
ꢀ
;ꢁ6!
;ꢋꢉꢊ ꢁꢒꢛꢋ 6ꢋꢅꢂꢋꢋꢊ !ꢉꢒꢌꢄꢐꢋ K ꢁꢉI+%H#-
ꢛꢉ90 ꢌꢃꢉꢑ
3-,
(%$ ꢈ
1)
ꢂꢒꢅꢈ ꢋ9ꢅꢋꢐꢊꢉꢌ ꢈꢒꢏꢈ ꢖꢃꢌꢅꢉꢏꢋ ꢑꢒꢃꢑꢋ
2)
7ꢌꢋꢉꢍꢋ 1ꢃꢅꢋ: ꢅꢈꢋ ꢒꢍꢃꢌꢉꢅꢒꢃꢊ ꢅꢋꢍꢅ ꢒꢍ ꢊꢃꢅ
ꢆꢋꢐꢓꢃꢐꢛꢋꢑ ꢉꢍ ꢉ ꢍꢋꢐꢒꢋꢍ ꢅꢋꢍꢅ ꢉꢅ ";ꢎ/<=1
ꢉꢊꢑ ꢛꢄꢍꢅ ꢚꢋ ꢆꢋꢐꢓꢃꢐꢛꢋꢑ ꢚꢔ ꢅꢈꢋ ꢄꢍꢋꢐ
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
3)
ꢉꢇꢇꢃꢐꢑꢒꢊꢏ ꢅꢃ 8ꢗ" %((%'3%
4)
ꢇꢉꢊ ꢚꢋ ꢋ9ꢆꢉꢊꢑꢋꢑ ꢅꢃ $-.>? ꢂꢒꢅꢈ ꢚꢃꢃꢍꢅ
ꢇꢉꢆꢉꢇꢒꢅꢃꢐꢍ
ꢎꢍꢃꢌꢉꢅꢒꢃꢊ ꢇꢃꢃꢐꢑꢒꢊꢉꢅꢒꢃꢊ ꢒꢊ ꢇꢃꢛꢆꢌꢒꢉꢊꢇꢋ ꢂꢒꢅꢈ
"1,%(2& 7ꢗ3
=ꢆꢋꢐꢉꢅꢒꢊꢏ ꢅꢋꢛꢆꢋꢐꢉꢅꢄꢐꢋ ꢒꢍ ꢐꢋꢉꢌ ꢉꢛꢚꢒꢋꢊꢅ
ꢅꢋꢛꢆꢋꢐꢉꢅꢄꢐꢋ ꢉꢐꢃꢄꢊꢑ ꢅꢈꢋ ꢑꢐꢒꢖꢋꢐ ꢇꢃꢐꢋ
ꢗꢋꢏꢐꢋꢋ ꢃꢓ ꢆꢐꢃꢅꢋꢇꢅꢒꢃꢊ: ꢎ7%%
1
19-01-2007 MHW
© by SEMIKRON
SKYPER™ 32 R
Technical Explanations
Revision
05
Status:
preliminary
Prepared by:
Markus Hermwille
This Technical Explanation is valid for the following parts:
Related Documents:
part number:
date code (YYWW):
L6100102
≥ 0705
title:
version:
Data Sheet SKYPER 32 R
2007-01-19
SKYPER™ 32 R
Content
Application and Handling Instructions....................................................................................................................................... 3
Further application support....................................................................................................................................................... 3
General Description.................................................................................................................................................................. 3
Features of SKYPER™ 32 ....................................................................................................................................................... 3
Block diagram........................................................................................................................................................................... 4
Dimensions............................................................................................................................................................................... 4
PIN Array – Primary Side ......................................................................................................................................................... 5
PIN Array – Secondary Side..................................................................................................................................................... 6
Driver Performance .................................................................................................................................................................. 7
Insulation.................................................................................................................................................................................. 7
Isolation Test Voltage............................................................................................................................................................... 8
Auxiliary Power Supply............................................................................................................................................................. 8
Under Voltage Protection of driver power supply (UVP)........................................................................................................... 9
Input Signals............................................................................................................................................................................. 9
Short Pulse Suppression (SPS) ............................................................................................................................................... 9
Failure Management............................................................................................................................................................... 10
Shut Down Input (SDI)............................................................................................................................................................ 10
Dead Time generation (Interlock TOP / BOT) (DT) ................................................................................................................ 11
Dynamic Short Circuit Protection by VCEsat monitoring / de-saturation monitoring (DSCP)..................................................... 11
Adjustment of DSCP............................................................................................................................................................... 12
High Voltage Diode for DSCP ................................................................................................................................................ 13
Gate resistors......................................................................................................................................................................... 13
External Boost Capacitors (BC).............................................................................................................................................. 14
Application Example............................................................................................................................................................... 14
Mounting Notes ...................................................................................................................................................................... 15
Environmental Conditions....................................................................................................................................................... 15
Marking................................................................................................................................................................................... 16
2
2007-01-19 – Rev05
© by SEMIKRON
SKYPER™ 32 R
Please note:
Unless otherwise specified, all values in this technical explanation are typical values. Typical values are the average values expected in
large quantities and are provided for information purposes only. These values can and do vary in different applications. All operating
parameters should be validated by user’s technical experts for each application.
Application and Handling Instructions
Please provide for static discharge protection during handling. As long as the hybrid driver is not completely assembled,
the input terminals have to be short-circuited. Persons working with devices have to wear a grounded bracelet. Any
synthetic floor coverings must not be statically chargeable. Even during transportation the input terminals have to be
short-circuited using, for example, conductive rubber. Worktables have to be grounded. The same safety requirements
apply to MOSFET- and IGBT-modules.
Any parasitic inductances within the DC-link have to be minimised. Over-voltages may be absorbed by C- or RCD-
snubbers between main terminals for PLUS and MINUS of the power module.
When first operating a newly developed circuit, SEMIKRON recommends to apply low collector voltage and load current
in the beginning and to increase these values gradually, observing the turn-off behaviour of the free-wheeling diode and
the turn-off voltage spikes generated across the IGBT. An oscillographic control will be necessary. Additionally, the case
temperature of the module has to be monitored. When the circuit works correctly under rated operation conditions,
short-circuit testing may be done, starting again with low collector voltage.
It is important to feed any errors back to the control circuit and to switch off the device immediately in failure events.
Repeated turn-on of the IGBT into a short circuit with a high frequency may destroy the device.
The inputs of the hybrid driver are sensitive to over-voltage. Voltages higher than VS +0,3V or below -0,3V may destroy
these inputs. Therefore, control signal over-voltages exceeding the above values have to be avoided.
The connecting leads between hybrid driver and the power module should be as short as possible (max. 20cm), the
driver leads should be twisted.
Further application support
Latest information is available at http://www.semikron.com. For design support please read the SEMIKRON Application
Manual Power Modules available at http://www.semikron.com.
General Description
The SKYPER™ 32 core constitutes an interface between IGBT modules and the controller. This core is a half bridge driver.
Basic functions for driving, potential separation and protection are integrated in the driver. Thus it can be used to build up a
driver solution for IGBT modules.
Features of SKYPER™ 32
SKYPER™ 32
Two output channels
Integrated potential free power supply for the secondary side
Short Pulse Suppression (SPS)
Under Voltage Protection (UVP)
Drive interlock (dead time) top / bottom (DT)
Dynamic Short Circuit Protection (DSCP) by VCE monitoring and direct
switch off
Shut Down Input (SDI)
Failure Management
Expandable by External Boost Capacitors (BC)
DC bus voltage up to 1200V
3
2007-01-19 – Rev05
© by SEMIKRON
SKYPER™ 32 R
Block diagram
Block diagram
Dimensions
Dimensions in mm (bottom view)
(top view)
±0,2mm unless otherwise noted
4
2007-01-19 – Rev05
© by SEMIKRON
SKYPER™ 32 R
PIN Array – Primary Side
Connectors
Connector X10 (RM2,54, 10pin)
±0,25mm unless otherwise noted
PIN
Signal
Function
Specification
GND for power supply and GND for digital
signals
X10:01
PRIM_PWR_GND
GND for power supply and GND for digital
signals
X10:02
X10:03
PRIM_PWR_GND
LOW = NO ERROR; open collector output;
max. 30V / 15mA
(external pull up resistor necessary)
PRIM_nERROR_OUT
ERROR output
X10:04
X10:05
PRIM_nERROR_IN
PRIM_PWR_GND
ERROR input
5V logic; LOW active
GND for power supply and GND for digital
signals
GND for power supply and GND for digital
signals
X10:06
X10:07
PRIM_PWR_GND
PRIM_TOP_IN
Digital 15 V; 10 kOhm impedance;
LOW = TOP switch off;
HIGH = TOP switch on
Switching signal input (TOP switch)
Digital 15 V; 10 kOhm impedance;
LOW = BOT switch off;
X10:08
PRIM_BOT_IN
Switching signal input (BOTTOM switch)
HIGH = BOT switch on
X10:09
X10:10
PRIM_PWR_15P
PRIM_PWR_15P
Drive core power supply
Drive core power supply
Stabilised +15V ±4%
Stabilised +15V ±4%
5
2007-01-19 – Rev05
© by SEMIKRON
SKYPER™ 32 R
PIN Array – Secondary Side
Connectors
Connector X100 / X200 (RM2,54, 10pin)
±0,25mm unless otherwise noted
PIN
Signal
Function
Specification
X100:01
X100:02
SEC_TOP_VCE_CFG
SEC_TOP_VCE_IN
Input reference voltage adjustment
Input VCE monitoring
Output power supply for external buffer
capacitors
X100:03
X100:04
SEC_TOP_15P
SEC_TOP_15P
Stabilised +15V
Stabilised +15V
Output power supply for external buffer
capacitors
GND for power supply and GND for digital
signals
X100:05
X100:06
X100:07
X100:08
X100:09
SEC_TOP_GND
SEC_TOP_IGBT_ON
SEC_TOP_GND
Switch on signal TOP IGBT
GND for power supply and GND for digital
signals
SEC_TOP_IGBT_OFF
SEC_TOP_8N
Switch off signal TOP IGBT
Output power supply for external buffer
capacitors
Stabilised -7V
Stabilised -7V
Output power supply for external buffer
capacitors
X100:10
SEC_TOP_8N
X200:01
X200:02
SEC_BOT_VCE_CFG
SEC_BOT_VCE_IN
Input reference voltage adjustment
Input VCE monitoring
Output power supply for external buffer
capacitors
X200:03
X200:04
SEC_BOT_15P
SEC_BOT_15P
Stabilised +15V
Stabilised +15V
Output power supply for external buffer
capacitors
GND for power supply and GND for digital
signals
X200:05
X200:06
X200:07
X200:08
X200:09
SEC_BOT_GND
SEC_BOT_IGBT_ON
SEC_BOT_GND
Switch on signal BOT IGBT
GND for power supply and GND for digital
signals
SEC_BOT_IGBT_OFF
SEC_BOT_8N
Switch off signal BOT IGBT
Output power supply for external buffer
capacitors
Stabilised -7V
Stabilised -7V
Output power supply for external buffer
capacitors
X200:10
SEC_BOT_8N
6
2007-01-19 – Rev05
© by SEMIKRON
SKYPER™ 32 R
Driver Performance
The driver is designed for application with half bridges or single modules and a maximum gate charge per pulse
< 2,5µC (< 6,3µC with external boost capacitors). The charge necessary to switch the IGBT is mainly depending on the
IGBT’s chip size, the DC-link voltage and the gate voltage. This correlation is shown in module datasheets. It should,
however, be considered that the driver is turned on at +15V and turned off at -7V. Therefore, the gate voltage will change by
22V during each switching procedure. Unfortunately, many datasheets do not show negative gate voltages. In order to
determine the required charge, the upper leg of the charge curve may be prolonged to +22V for determination of
approximate charge per switch.
The medium output current of the driver is determined by the switching frequency and the gate charge. The maximum
switching frequency may be calculated with the shown equation and is limited by the average current of the driver power
supply and the power dissipation of driver components.
Calculation Switching Frequency
Maximum Switching Frequency @ different Gate Charges @ Tamb=25°C
60 kHz
50 kHz
40 kHz
30 kHz
20 kHz
IoutAVmax
fmax
=
QGE
fmax
IoutAVmax
QGE
:
Maximum switching frequency *
Maximum output average current
Gate charge of the driven IGBT
:
:
10 kHz
* @ Tamb=25°C
with external boost capacitors
0 kHz
0 µC
1 µC
2 µC
3 µC
4 µC
5 µC
6 µC
7 µC
gate charge
Calculation Average Output Current
Average Output Current as a Function of the Ambient Temperature
60 mA
50 mA
40 mA
30 mA
20 mA
10 mA
0 mA
IoutAV = fsw × QGE
IoutAV
:
Average output current
Switching frequency
fsw:
QGE
:
Gate charge of the driven IGBT
0 °C
10 °C
20 °C
30 °C
40 °C
50 °C
60 °C
70 °C
80 °C
90 °C
ambient temperature
Please note:
The maximum value of the switching frequency is limited to 50kHz due to switching reasons.
Insulation
Magnetic transformers are used for insulation between gate driver primary and secondary side. The transformer set consists
of pulse transformers which are used bidirectional for turn-on and turn-off signals of the IGBT and the error feedback
between secondary and primary side, and a DC/DC converter. This converter provides a potential separation (galvanic
separation) and power supply for the two secondary (TOP and BOT) sides of the driver. Thus, external transformers for
external power supply are not required.
Creepage and Clearance Distance in mm
Primary to secondary
Min. 12,2
7
2007-01-19 – Rev05
© by SEMIKRON
SKYPER™ 32 R
Isolation Test Voltage
The isolation test voltage represents a measure of immunity to transient voltages. The maximum test voltage and time
applied once between input and output, and once between output 1 and output 2 are indicated in the absolute maximum
ratings. The high-voltage isolation tests and repeated tests of an isolation barrier can degrade isolation capability due to
partial discharge. Repeated isolation voltage tests should be performed with reduced voltage. The test voltage must be
reduced by 20% for each repeated test.
The isolation of the isolation barrier (transformer) is checked in the part. With exception of the isolation barrier, no active
parts, which could break through are used. An isolation test is not performed as a series test. Therefore, the user can
perform once the isolation test with voltage and time indicated in the absolute maximum ratings.
Please note:
An isolation test is not performed at SEMIKRON as a series test.
Auxiliary Power Supply
A few basic rules should be followed when dimensioning the customer side power supply for the driver. The following table
shows the required features of an appropriate power supply.
Requirements of the auxiliary power supply
Regulated power supply
+15V ±4%
50ms
Please note:
Maximum rise time of auxiliary power supply
Minimum peak current of auxiliary supply
Power on reset completed after
Do not apply switching
signals during power on
reset.
1A
150ms
The supplying switched mode power supply may not be turned-off for a short time as consequence of its current limitation.
Its output characteristic needs to be considered. Switched mode power supplies with fold-back characteristic or hiccup-mode
can create problems if no sufficient over current margin is available. The voltage has to rise continuously and without any
plateau formation as shown in the following diagram.
Rising slope of the power supply voltage
If the power supply is able to provide a higher current, a peak current will flow in the first instant to charge up the input
capacitances on the driver. Its peak current value will be limited by the power supply and the effective impedances (e.g.
distribution lines), only.
It is recommended to avoid the paralleling of several customer side power supply units. Their different set current limitations
may lead to dips in the supply voltage.
The driver is ready for operation typically 150ms after turning on the supply voltage. The driver error signal
PRIM_nERROR_OUT is operational after this time. Without any error present, the error signal will be reset.
To assure a high level of system safety the TOP and BOT signal inputs should stay in a defined state (OFF state, LOW)
during driver turn-on time. Only after the end of the power-on-reset, IGBT switching operation shall be permitted.
8
2007-01-19 – Rev05
© by SEMIKRON
SKYPER™ 32 R
Under Voltage Protection of driver power supply (UVP)
The internally detected supply voltage of the driver has an under voltage protection. The table below gives an overview of
the trip level.
Supply voltage
UVP level
Regulated +15V ±4%
13,5V
If the internally detected supply voltage of the driver falls below this level, the IGBTs will be switched off (IGBT driving
signals set to LOW). The input side switching signals of the driver will be ignored. The error memory will be set, and the
output PRIM_nERROR_OUT changes to the HIGH state.
Input Signals
The signal transfer to each IGBT is made with pulse transformers, used for switching on and switching off of the IGBT. The
inputs have a Schmitt Trigger characteristic and a positive / active high logic (input HIGH = IGBT on; input LOW = IGBT off).
It is mandatory to use circuits which switch active to +15V and 0V. Pull up and open collector output stages must not be
used for TOP / BOT control signals. It is recommended choosing the line drivers according to the demanded length of the
signal lines.
Please note:
It is not permitted to apply switching pulses shorter than 1µs.
TOP / BOT Input
A capacitor is connected to the input to obtain high noise immunity.
This capacitor can cause for current limited line drivers a little delay of
few ns, which can be neglected. The capacitors have to be placed as
close as possible to the driver interface.
Short Pulse Suppression (SPS)
This circuit suppresses short turn-on and off-pulses of incoming signals. This way the IGBTs are protected against spurious
noise as they can occur due to bursts on the signal lines. Pulses shorter than 625ns are suppressed and all pulses longer
than 750ns get through for 100% probability. Pulses with a length in-between 625ns and 750ns can be either suppressed or
get through.
Pulse pattern – SPS
9
2007-01-19 – Rev05
© by SEMIKRON
SKYPER™ 32 R
Failure Management
Any error detected will set the error latch and force the output PRIM_nERROR_OUT into HIGH state. Switching pulses from
the controller will be ignored. Connected and switched off IGBTs remain turned off. The switched off IGBTs remain turned
off. A reset of the latched error memory is only possible if no failure is present anymore and if the TOP and BOT input
signals are set to the LOW level for a period of tpERRRESET > 9µs.
The output PRIM_nERROR_OUT is an open collector output. For the error evaluation an external pull-up-resistor is
necessary pulled-up to the positive operation voltage of the control logic (LOW signal = no error present, wire break safety is
assured).
Open collector error transistor
Application hints
An external resistor to the controller logic high level is required. The
resistor has to be in the range of V / Imax < Rpull_up < 10kΩ.
PRIM_nERROR_OUT can operate to maximum 30V and can switch
a maximum of 15mA.
Example:
For V = +15V the needed resistor should be in the range
Rpull_up = (15V/15mA) … 10kΩ ⇒ 1kΩ… 10kΩ.
Please note:
The error output PRIM_ERROR_OUT is not short circuit proof.
Shut Down Input (SDI)
The shut down input / error input signal can gather error signals of other hardware components for switching off the IGBT
(input HIGH = no turn-off; input LOW = turn-off).
A LOW signal at PRIM_nERROR_IN will set the error latch and force the output PRIM_nERROR_OUT into HIGH state.
Switching pulses from the controller will be ignored. A reset of the latched error memory is only possible if no LOW signal at
PRIM_nERROR_IN is present anymore and if the TOP and BOT input signals are set to the LOW level for a period of
tpERRRESET > 9µs.
The SDI function can be disabled by no connection or connecting to 5V.
Connection SDI
10
2007-01-19 – Rev05
© by SEMIKRON
SKYPER™ 32 R
Dead Time generation (Interlock TOP / BOT) (DT)
The DT circuit prevents, that TOP and BOT IGBT of one half bridge are switched on at the same time (shoot through). The
dead time is not added to a dead time given by the controller. Thus the total dead time is the maximum of "built in dead time"
and "controller dead time". It is possible to control the driver with one switching signal and its inverted signal.
Please note:
The generated dead time is fixed and cannot be changed.
Pulse pattern – DT
The total propagation delay of the driver is the sum of
interlock dead time (tTD and driver input output signal
)
propagation delay (td(on;off)IO) as shown in the pulse pattern.
Moreover the switching time of the IGBT chip has to be taken
into account (not shown in the pulse pattern).
In case both channel inputs (PRIM_TOP_IN and
PRIM_BOT_IN) are at high level, the IGBTs will be turned off.
If only one channel is switching, there will be no interlock
dead time.
Please note:
No error message will be generated when overlap of switching signals occurs.
Dynamic Short Circuit Protection by VCEsat monitoring / de-saturation monitoring (DSCP)
The DSCP circuit is responsible for short circuit sensing. It monitors the collector-emitter voltage VCE of the IGBT during its
on-state. Due to the direct measurement of VCEsat on the IGBT's collector, the DSCP circuit switches off the IGBTs and an
error is indicated.
The reference voltage VCEref may dynamically be adapted to the IGBTs switching behaviour. Immediately after turn-on of the
IGBT, a higher value is effective than in steady state. This value will, however, be reset, when the IGBT is turned off. VCEstat
is the steady-state value of VCEref and is adjusted to the required maximum value for each IGBT by an external resistor RCE
.
It may not exceed 10V. The time constant for the delay (exponential shape) of VCEref may be controlled by an external
capacitor CCE, which is connected in parallel to RCE. It controls the blanking time tbl which passes after turn-on of the IGBT
before the VCEsat monitoring is activated. This makes an adaptation to any IGBT switching behaviour possible.
Reference Voltage (VCEref) Characteristic
After tbl has passed, the VCE monitoring will be triggered as soon as VCEsat > VCEref and will turn off the IGBT. The error
memory will be set, and the output PRIM_nERROR_OUT changes to the HIGH state. Possible failure modes are shows in
the following pictures.
11
2007-01-19 – Rev05
© by SEMIKRON
SKYPER™ 32 R
Short circuit during operation
Turn on of IGBT too slow *
Short circuit during turn on
* or adjusted blanking time too short
Adjustment of DSCP
The external components RCE and CCE are applied for adjusting the steady-state threshold the blanking time.
Connection RCE and CCE
Dimensioning of RCE and CCE
V
⎛
⎜
⎞
⎟
VCEstat + RVCE
⋅
kΩ
⎜
⎟
RCE
[
kΩ
]
= −17kΩ ⋅ln 1−
⎜
⎜
⎝
8,5V
⎟
⎟
⎠
µs
Ω
tbl
[
µs
]
− 2,5µs − 0,11
⋅ RCE
CCE
[
pF =
]
µs
0,00323
pF
VCEstat
tblx
:
Collector-emitter threshold static monitoring voltage
Blanking time
:
VCEstat_max = 8V (RVCE = 0Ω)
VCEstat_max = 7V (RVCE = 1kΩ)
Please Note:
The equations are calculated considering the use of high voltage diode
BY203/20S. The calculated values VCEstat and tbl are typical values at room
temperature. These values can and do vary in the application (e.g. tolerances of
used high voltage diode, resistor RCE, capacitor CCE).
The DSCP function is not recommended for over current protection.
Application hints
If the DSCP function is not used, for example during the experimental phase, SEC_TOP_VCE_IN must be connected with
SEC_TOP_GND for disabling SCP @ TOP side and SEC_BOT_VCE_IN must be connected with SEC_BOT_GND for disabling SCP @
BOT side.
12
2007-01-19 – Rev05
© by SEMIKRON
SKYPER™ 32 R
High Voltage Diode for DSCP
The high voltage diode blocks the high voltage during IGBT off state. The connection of this diode between driver and IGBT
is shows in the following schematic.
Connection High Voltage Diode
Characteristics
Reverse blocking voltage of the diode shall be higher than the
used IGBT.
Reverse recovery time of the fast diode shall be lower than VCE
rising of the used IGBT.
Forward voltage of the diode: 1,5V @ 2mA forward current
(Tj=25°C).
A collector series resistance RVCE (1kΩ / 0,4W) must be
connected for 1700V IGBT operation.
Gate resistors
The output transistors of the driver are MOSFETs. The sources of the MOSFETs are separately connected to external
terminals in order to provide setting of the turn-on and turn-off speed of each IGBT by the external resistors RGon and RGoff
.
As an IGBT has input capacitance (varying during switching time) which must be charged and discharged, both resistors will
dictate what time must be taken to do this. The final value of the resistance is difficult to predict, because it depends on
many parameters as DC link voltage, stray inductance of the circuit, switching frequency and type of IGBT.
Connection RGon, RGoff
Application Hints
The gate resistor influences the switching time, switching losses,
dv/dt behaviour, etc. and has to be selected very carefully. Due to
this influence a general value for the gate resistors cannot be
recommended. The gate resistor has to be optimized according to
switching behaviour and over voltage peaks within the specific
circuitry.
By increasing RGon the turn-on speed will decrease. The reverse
peak current of the free-wheeling diode will diminish.
By increasing RGoff the turn-off speed of the IGBT will decrease. The
inductive peak over voltage during turn-off will diminish.
In order to ensure locking of the IGBT even when the driver supply
voltage is turned off, a resistance (RGE) has to be integrated.
Please note:
Do not connect the terminals SEC_TOP_IGBT_ON with SEC_TOP_IGBT_OFF and SEC_BOT_IGBT_ON
with SEC_BOT_IGBT_OFF, respectively.
13
2007-01-19 – Rev05
© by SEMIKRON
SKYPER™ 32 R
External Boost Capacitors (BC)
The rated gate charge of the driver may be increase by additional boost capacitors to drive IGBT with large gate
capacitance.
Connection External Boost Capacitors
Dimensioning of Cboost
User Side
C
boost15P [µF] = QGE [µC] × 1/V - 2,2µF
boost8N [µF] = QGE [µC] × 2/V - 4,7µF
SEC_TOP_PWR_15P
SEC_TOP_PWR_15P
C
QGE: Gate charge of the IGBT @ VGE = -7 …+15V
Minimum rated voltage Cboost15P: 25V
Minimum rated voltage Cboost8N: 16V
SEC_TOP_PWR_8N
SEC_TOP_PWR_8N
Cboost8N
Cboost15P
SEC_TOP_GND
SEC_TOP_GND
Type of capacitor: ceramic capacitor
SEC_BOT_PWR_15P
SEC_BOT_PWR_15P
Please consider the maximum rating four output charge per
pulse of the gate driver.
SEC_BOT_PWR_8N
SEC_BOT_PWR_8N
Application Hints
Cboost8N
Cboost15P
SEC_BOT_GND
SEC_BOT_GND
The external boost capacitors should be connected as close as
possible to the gate driver and to have low inductance.
Application Example
Connection Schematic
DC+
SKYPERTM 32
SEC_TOP_VCE_CFG
SEC_TOP_VCE_IN
SEC_TOP_15P
BY203/20S
330pF
18k
50V
SEC_TOP_15P
SEC_TOP_GND
SEC_TOP_IGBT_ON
Ron
PRIM_PWR_GND
4,75k
SEC_TOP_GND
PRIM_PWR_GND
PRIM_nERROR_OUT
PRIM_nERROR_IN
PRIM_PWR_GND
PRIM_PWR_GND
PRIM_TOP_IN
SEC_TOP_IGBT_OFF
10k
ERROR OUT
Roff
SEC_TOP_8N
SEC_TOP_8N
2,2µF
25V
4,7µF
16V
load
SEC_BOT_VCE_CFG
SEC_BOT_VCE_IN
SEC_BOT_15P
BY203/20S
INPUT TOP
INPUT BOT
PRIM_BOT_IN
330pF
50V
18k
PRIM_PWR_15P
PRIM_PWR_15P
SEC_BOT_15P
+15V
SEC_BOT_GND
SEC_BOT_IGBT_ON
SEC_BOT_GND
SEC_BOT_IGBT_OFF
SEC_BOT_8N
1nF
1nF
100V
1nF
220µF
35V
1nF
Ron
100V
100V
100V
10k
Roff
2,2µF
25V
4,7µF
16V
SEC_BOT_8N
DC-
-
-
-
-
application example for 1200V IGBT
Qout/pulse = 5µC
CEref = 5,5V
tbl = 5,5µs
V
14
2007-01-19 – Rev05
© by SEMIKRON
SKYPER™ 32 R
Mounting Notes
Soldering Hints
Drill Hole & Pad Size in mm
The temperature of the solder must not exceed 260°C, and solder time must
not exceed 10 seconds.
The ambient temperature must not exceed the specified maximum storage
temperature of the driver.
The solder joints should be in accordance to IPC A 610 Revision D (or later) -
Class 3 (Acceptability of Electronic Assemblies) to ensure an optimal
connection between driver core and printed circuit board.
Please note:
The driver is not suited for hot air reflow or infrared reflow processes.
The connection between driver core and printed circuit board should be mechanical reinforced by using support posts.
Use of Support Posts
Product information of suitable support posts and
distributor contact information is available at e.g.
http://www.richco-inc.com (e.g. series DLMSPM,
LCBST).
Please note:
The use of agressive materials in cleaning and potting process of driver core may be detrimental for the device parameters. If the driver
core is coated by the user, any warranty (Gewährleistung) expires.
Environmental Conditions
The driver core is type tested under the environmental conditions below.
Conditions
Values (max.)
Vibration
Sinusoidal sweep 20Hz … 500Hz, 5g, 26 sweeps per axis (x, y, z)
-
-
Tested acc. IEC 68-2-6
Connection between driver core and printed circuit board mechanical reinforced by using support posts.
Shock
Half-sinusoidal pulse, 5g, shock width 18ms, 3 shocks in each direction (±x, ±y, ±z), 18 shocks in total
-
-
Tested acc. IEC 68-2-27
Connection between driver core and printed circuit board mechanical reinforced by using support posts.
The characteristics and further environmental conditions are indicated in the data sheet.
15
2007-01-19 – Rev05
© by SEMIKRON
SKYPER™ 32 R
Marking
Every driver core is marked. The marking contains the following items.
Part Marking Information
The Data Matrix Code is described as follows:
Type:
EEC 200
Standard:
Cell size:
Dimension:
ICO / IEC 16022
0,254 - 0,3 mm
5 × 5 mm
The following data is coded:
n
o
p
q
r
XXXXXXXXYY
ZZZZ
VVVV
n
8 digits
2 digits
part number
version number
1. SEMIKRON part number (8 digits) + version number (2 digits)
2. Date code (4 digits): YYWW
o
p
q
r
1 digit
4 digits
1 digit
4 digits
blank
date code
blank
3. Continuous number referred to date coce (4 digits)
4. Data matrix code
continuous number
DISCLAIMER
SEMIKRON reserves the right to make changes without further notice herein to improve reliability, function or design.
Information furnished in this document is believed to be accurate and reliable. However, no representation or warranty is
given and no liability is assumed with respect to the accuracy or use of such information. SEMIKRON does not assume
any liability arising out of the application or use of any product or circuit described herein. Furthermore, this technical
information may not be considered as an assurance of component characteristics. No warranty or guarantee expressed
or implied is made regarding delivery, performance or suitability. This document supersedes and replaces all information
previously supplied and may be supersede by updates without further notice.
SEMIKRON products are not authorized for use in life support appliances and systems without the express written
approval by SEMIKRON.
www.SEMIKRON.com
16
2007-01-19 – Rev05
© by SEMIKRON
相关型号：
SL-101-T-10
Board Connector, 1 Contact(s), 1 Row(s), Female, Straight, Solder Terminal, Socket, ROHS COMPLIANT
SAMTEC
SL-101-T-11
Board Connector, 1 Contact(s), 1 Row(s), Female, Straight, Solder Terminal, Socket, ROHS COMPLIANT
SAMTEC
SL-101-T-19
Board Connector, 1 Contact(s), 1 Row(s), Female, Straight, Solder Terminal, Socket, ROHS COMPLIANT
SAMTEC
SL-101-T-30
Board Connector, 1 Contact(s), 1 Row(s), Female, Straight, Solder Terminal, Socket, ROHS COMPLIANT
SAMTEC
SL-101-T-31
Board Connector, 1 Contact(s), 1 Row(s), Female, Straight, Solder Terminal, Socket, ROHS COMPLIANT
SAMTEC
SL-101-T-32
Board Connector, 1 Contact(s), 1 Row(s), Female, Straight, Solder Terminal, Socket, ROHS COMPLIANT
SAMTEC
©2020 ICPDF网 联系我们和版权申明