MCR100-8 [SEMIWELL]
Sensitive Gate Silicon Controlled Rectifiers; 敏感栅硅控整流器
| 型号： | MCR100-8 |
| 厂家： | 
SEMIWELL SEMICONDUCTOR |
| 描述： | Sensitive Gate Silicon Controlled Rectifiers |
| 文件： | 总5页 (文件大小：650K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SemiWell Semiconductor
MCR100-8
Sensitive Gate
Silicon Controlled Rectifiers
Symbol
2. Gate
○
○
○
Features
3. Anode
1. Cathode
◆ Repetitive Peak Off-State Voltage : 600V
◆ R.M.S On-State Current ( I
= 0.8 A )
T(RMS)
◆ Low On-State Voltage (1.2V(Typ.)@ I
)
TM
TO-92
General Description
Sensitive triggering SCR is suitable for the application where
gate current limited such as small motor control, gate driver
for large SCR, sensing and detecting circuits.
1
2
3
Absolute Maximum Ratings ( TJ = 25°C unless otherwise specified )
Symbol
VDRM
Parameter
Repetitive Peak Off-State Voltage
Average On-State Current
R.M.S On-State Current
Condition
Ratings
600
Units
V
A
A
Half Sine Wave : TC = 74 °C
All Conduction Angle
IT(AV)
0.5
IT(RMS)
0.8
1/2 Cycle, 60Hz, Sine Wave
Non-Repetitive
ITSM
I2t
Surge On-State Current
10
A
I2t for Fusing
A2s
W
W
A
t = 8.3ms
0.415
PGM
PG(AV)
IFGM
VRGM
TJ
Forward Peak Gate Power Dissipation
Forward Average Gate Power Dissipation
Forward Peak Gate Current
Reverse Peak Gate Voltage
Operating Junction Temperature
Storage Temperature
2
0.1
TA =25°C, Pulse Width ≤ 1.0㎲
TA =25°C, t = 8.3ms
1
5.0
V
- 40 ~ 125
- 40 ~ 150
°C
°C
TSTG
Oct, 2002. Rev. 2
1/5
Copyright@SemiWell Semiconductor Co., Ltd., All rights are reserved.
MCR100-8
Electrical Characteristics ( TC = 25 °C unless otherwise noted )
Ratings
Typ.
Symbol
Items
Conditions
Unit
Min.
Max.
V
AK = VDRM or VRRM ; RGK = 1000 Ω
Repetitive Peak Off-State
Current
IDRM
VTM
IGT
TC = 25 °C
10
200
─
─
─
─
㎂
TC = 125 °C
( ITM = 1 A, Peak )
Peak On-State Voltage (1)
Gate Trigger Current (2)
1.2
1.7
V
─
VAK = 6 V, RL=100 Ω
TC = 25 °C
200
500
─
─
─
─
㎂
TC = - 40 °C
VD = 7 V, RL=100 Ω
VGT
VGD
dv/dt
TC = 25 °C
Gate Trigger Voltage (2)
0.8
1.2
V
V
─
─
─
─
TC = - 40 °C
V
AK = 12 V, RL=100 Ω
TC = 125 °C
Non-Trigger Gate Voltage (1)
0.2
─
─
─
VD = 0.67 VDRM ,
Critical Rate of Rise Off-State
Voltage
Exponential waveform,
R
GK = 1000Ω
500
800
V/㎲
T =125°C
J
Critical Rate of Rise On-State
Current
─
─
ITM = 2A ; Ig = 10mA
di/dt
50
A/㎲
VAK = 12 V, Gate Open
Initiating Curent = 50mA
IH
Holding Current
2
─
5.0
10
mA
─
─
T
C = 25 °C
TC = - 40 °C
Rth(j-c)
Rth(j-a)
Thermal Impedance
Thermal Impedance
Junction to case
60
°C/W
°C/W
─
─
─
─
Junction to Ambient
150
※ Notes :
1. Pulse Width ≤ 1.0 ms , Duty cycle ≤ 1%
2. Does not include RGK in measurement.
2/5
MCR100-8
Fig 1. Gate Characteristics
Fig 2. Maximum Case Temperature
140
120
100
80
101
100
10-1
VGM(5V)
PGM(2W)
θ = 180o
PG(AV)(0.1W)
60
2
π
π
θ
25oC
40
360°
20
: Conduction Angle
θ
VGD(0.2V)
0
0.0
100
101
102
103
104
0.1
0.2
0.3
0.4
0.5
0.6
Average On-State Current [A]
Gate Current [mA]
Fig 3. Typical Forward Voltage
Fig 4. Thermal Response
101
103
Rθ
(J-C)
102
101
100
100
125oC
25oC
-1
10
10-2
10-1
100
101
102
103
0.5
1.0
1.5
2.0
2.5
On-State Voltage [V]
Time (sec)
Fig 6. Typical Gate Trigger Current vs.
Junction Temperature
Fig 5. Typical Gate Trigger Voltage vs.
Junction Temperature
10
10
1
1
0.1
-50
0.1
-50
0
50
100
150
0
50
100
150
Junction Temperature[oC]
Junction Temperature[oC]
3/5
MCR100-8
Fig 7. Typical Holding Current
Fig 8. Power Dissipation
10
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
θ = 180o
θ = 120o
θ = 90o
θ = 60o
θ = 30o
1
0.1
-50
0
50
100
150
0.0
0.1
0.2
0.3
0.4
0.5
0.6
Junction Temperature[oC]
Average On-State Current [A]
4/5
MCR100-8
TO-92 Package Dimension
mm
Typ.
4.2
Inch
Typ.
Dim.
Min.
Max.
Min.
Max.
A
B
0.165
3.7
4.83
14.87
0.4
0.146
0.190
0.585
0.016
0.190
0.017
C
D
E
F
G
H
I
4.43
0.174
0.554
14.07
4.43
0.33
4.83
0.45
0.174
2.54
2.54
0.100
0.100
J
0.48
0.013
0.019
A
F
E
B
C
G
1
D
2
3
1. Cathode
2. Gate
3. Anode
J
H
I
5/5
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