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STF16A60 [SEMIWELL]

Bi-Directional Triode Thyristor; 双向晶闸管
STF16A60
型号： STF16A60
厂家： SEMIWELL SEMICONDUCTOR    SEMIWELL SEMICONDUCTOR
描述：

Bi-Directional Triode Thyristor
双向晶闸管
文件： 总6页 (文件大小：660K)
中文：  中文翻译
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SemiWell Semiconductor  
STF16A60  
UL : E228720  
Bi-Directional Triode Thyristor  
Symbol  
○ 2.T2  
Features  
▼▲  
◆ Repetitive Peak Off-State Voltage : 600V  
○
3.Gate  
◆ R.M.S On-State Current ( I  
= 16 A )  
T(RMS)  
○
1.T1  
◆ High Commutation dv/dt  
◆ Isolation Voltage ( V  
= 1500V AC )  
ISO  
TO-220F  
General Description  
This device is fully isolated package suitable for AC switching  
application, phase control application such as fan speed and  
temperature modulation control, lighting control and static  
switching relay.  
This device is approved to comply with applicable require-  
ments by Underwriters Laboratories Inc.  
1
2
3
Absolute Maximum Ratings ( TJ = 25°C unless otherwise specified )  
Symbol  
VDRM  
Parameter  
Repetitive Peak Off-State Voltage  
R.M.S On-State Current  
Condition  
Ratings  
600  
Units  
V
A
TC = 68 °C  
IT(RMS)  
16  
One Cycle, 50Hz/60Hz, Peak,  
Non-Repetitive  
ITSM  
Surge On-State Current  
155/170  
A
I2t  
PGM  
PG(AV)  
IGM  
120  
5.0  
I2t  
A2s  
W
W
A
Peak Gate Power Dissipation  
Average Gate Power Dissipation  
Peak Gate Current  
0.5  
2.0  
VGM  
VISO  
TJ  
Peak Gate Voltage  
10  
V
Isolation Breakdown Voltage(R.M.S.)  
Operating Junction Temperature  
Storage Temperature  
Mass  
A.C. 1 minute  
1500  
- 40 ~ 125  
- 40 ~ 150  
2.0  
V
°C  
°C  
g
TSTG  
Mar, 2003. Rev. 2  
1/6  
copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.  
STF16A60  
Electrical Characteristics  
Ratings  
Typ.  
Symbol  
Items  
Conditions  
Unit  
Min.  
Max.  
V
D = VDRM, Single Phase, Half Wave  
Repetitive Peak Off-State  
Current  
IDRM  
2.0  
mA  
V
─
─
TJ = 125 °C  
VTM  
IT = 25 A, Inst. Measurement  
Peak On-State Voltage  
1.4  
30  
─
─
─
─
─
─
─
─
─
─
─
─
─
─
I+  
Ⅰ
GT1  
I -  
V
V
D = 6 V, RL=10 Ω  
Gate Trigger Current  
30  
mA  
Ⅱ
GT1  
I -  
30  
Ⅲ
Ⅰ
GT3  
V+  
1.5  
1.5  
1.5  
─
GT1  
V-GT1  
D = 6 V, RL=10 Ω  
Gate Trigger Voltage  
V
Ⅱ
V-GT3  
VGD  
Ⅲ
─
TJ = 125 °C, VD = 1/2 VDRM  
Non-Trigger Gate Voltage  
0.2  
V
TJ = 125 °C, [di/dt]c = -8.0 A/ms,  
VD=2/3 VDRM  
Critical Rate of Rise Off-State  
Voltage at Commutation  
(dv/dt)c  
10  
V/㎲  
─
─
IH  
Holding Current  
25  
mA  
─
─
─
Rth(j-c)  
Thermal Impedance  
Junction to case  
3.0  
°C/W  
─
2/6  
STF16A60  
Fig 1. Gate Characteristics  
Fig 2. On-State Voltage  
102  
101  
100  
VGM (10V)  
101  
100  
10-1  
PGM (5W)  
TJ = 125oC  
PG(AV) (0.5W)  
25 ℃  
TJ = 25oC  
VGD (0.2V)  
101  
102  
103  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
On-State Voltage [V]  
Gate Current [mA]  
Fig 4. On State Current vs.  
Fig 3. On State Current vs.  
Maximum Power Dissipation  
Allowable Case Temperature  
20  
18  
16  
14  
12  
10  
8
130  
120  
110  
100  
90  
θ = 180o  
θ = 150o  
θ = 120o  
θ
π
π
2
θ
θ = 90o  
θ = 60o  
360°  
θ : Conduction Angle  
θ = 30o  
θ = 30o  
θ
π
π
2
θ = 60o  
θ = 90o  
θ = 120o  
θ = 150o  
θ = 180o  
θ
6
80  
360°  
4
70  
θ : Conduction Angle  
2
0
60  
0
2
4
6
8
10  
12  
14  
16  
18  
20  
0
2
4
6
8
10  
12  
14  
16  
18  
20  
RMS On-State Current [A]  
RMS On-State Current [A]  
Fig 6. Gate Trigger Voltage vs.  
Junction Temperature  
Fig 5. Surge On-State Current Rating  
( Non-Repetitive )  
10  
200  
150  
100  
50  
60Hz  
V_  
GT3  
1
V+  
GT1  
50Hz  
V_  
GT1  
0
0.1  
-50  
100  
101  
102  
0
50  
100  
150  
Junction Temperature [ oC]  
Time (cycles)  
3/6  
STF16A60  
Fig 7. Gate Trigger Current vs.  
Junction Temperature  
Fig 8. Transient Thermal Impedance  
10  
10  
1
1
I+  
GT1  
I_  
GT1  
I_  
GT3  
0.1  
-50  
0.1  
10-2  
10-1  
100  
101  
102  
0
50  
100  
150  
Junction Temperature [ oC]  
Time (sec)  
Fig 9. Gate Trigger Characteristics Test Circuit  
10Ω  
10Ω  
10Ω  
▼▲  
6V  
▼▲  
6V  
▼▲  
6V  
●
●
●
A
A
A
R
R
R
G
G
G
V
V
V
●
●
●
Test Procedure Ⅰ  
Test Procedure Ⅱ  
Test Procedure Ⅲ  
4/6  
STF16A60  
TO-220F Package Dimension  
mm  
Typ.  
Inch  
Typ.  
Dim.  
Min.  
10.4  
6.18  
9.55  
13.47  
6.05  
1.26  
3.17  
1.87  
2.57  
Max.  
10.6  
6.44  
9.81  
13.73  
6.15  
1.36  
3.43  
2.13  
2.83  
Min.  
Max.  
0.417  
0.254  
0.386  
0.540  
0.242  
0.054  
0.135  
0.084  
0.111  
A
B
C
D
E
0.409  
0.243  
0.376  
0.530  
0.238  
0.050  
0.125  
0.074  
0.101  
F
G
H
I
J
K
2.54  
5.08  
0.100  
0.200  
L
2.51  
1.25  
0.45  
0.6  
2.62  
1.55  
0.63  
1.0  
0.099  
0.049  
0.018  
0.024  
0.103  
0.061  
0.025  
0.039  
M
N
O
φ
3.7  
3.2  
1.5  
0.146  
0.126  
0.059  
φ 1  
φ 2  
A
E
I
H
F
B
C
φ
φ 1  
φ 2  
L
G
M
1
2
3
D
1. T1  
2. T2  
3. Gate  
J
O
N
K
5/6  
STF16A60  
TO-220F Package Dimension, Forming  
mm  
Typ.  
Inch  
Typ.  
Dim.  
Min.  
10.4  
6.18  
9.55  
8.4  
6.05  
1.26  
3.17  
1.87  
2.57  
Max.  
10.6  
6.44  
9.81  
8.66  
6.15  
1.36  
3.43  
2.13  
2.83  
Min.  
Max.  
0.417  
0.254  
0.386  
0.341  
0.242  
0.054  
0.135  
0.084  
0.111  
A
B
C
D
E
0.409  
0.243  
0.376  
0.331  
0.238  
0.050  
0.125  
0.074  
0.101  
F
G
H
I
J
K
2.54  
5.08  
0.100  
0.200  
L
2.51  
1.25  
0.45  
0.6  
2.62  
1.55  
0.63  
1.0  
0.099  
0.049  
0.018  
0.024  
0.103  
0.061  
0.025  
0.039  
M
N
O
P
5.0  
3.7  
3.2  
1.5  
0.197  
0.146  
0.126  
0.059  
φ
φ 1  
φ 2  
A
E
I
H
F
B
C
φ
φ 1  
φ 2  
L
G
M
1
2
3
D
1. T1  
2. T2  
3. Gate  
N
O
J
P
K
6/6  

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