1N5818W [SEMTECH]

SCHOTTKY BARRIER RECTIFIERS;
1N5818W
型号: 1N5818W
厂家: SEMTECH CORPORATION    SEMTECH CORPORATION
描述:

SCHOTTKY BARRIER RECTIFIERS

二极管
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中文:  中文翻译
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1N5817W  
1.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE  
Features:  
PINNING  
DESCRIPTION  
Cathode  
Schottky Barrier Chip  
PIN  
1
Guard Ring Die Construction for Transient Protection  
Low Power Loss, High Efficiency  
High Surge Capability  
Anode  
2
2
1
A0  
High Current Capability and Low Forward Voltage Drop  
For Use in Low Voltage, High Frequency Inverters, Free  
Top View  
Marking Code: "A0"  
Wheeling, and Polarity Protection Application.  
Simplified outline SOD-123 and symbol  
Mechanical Data:  
Case: SOD-123, Plastic  
Terminals: Solderable per MIL-STD-202, Method 208  
Polarity: Cathode Band  
Absolute Maximum Ratings (Ta = 25oC)  
Symbol  
Value  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage at IR=1.0mA  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
20  
20  
20  
14  
1.0  
V
V
V
V
A
RMS Reverse Voltage  
VR(RMS)  
IO  
Average Rectified Output Current at TL=90℃  
Power Dissipation  
Ptot  
450  
25  
mW  
A
Non-Repetitive Peak Forward Surge Current 8.3ms single half  
sine-wave superimposed on rated load (JEDEC Method)  
IFSM  
Typical Thermal Resistance Junction to Ambient  
Operating Temperature Range  
RθJA  
Tj  
222  
/W  
-65 to +125  
-65 to +150  
Storage Temperature Range  
TS  
SEMTECH ELECTRONICS LTD.  
(Subsidiary of Sino-Tech International Holdings Limited, a company  
listed on the Hong Kong Stock Exchange, Stock Code: 724)  
®
Dated : 24/11/2004  
1N5817W  
Characteristics at Tamb = 25  
Symbol  
Min.  
Typ.  
Max.  
Unit  
at IF = 0.1A  
VFM  
VFM  
VFM  
-
-
-
-
-
-
0.32  
0.45  
0.75  
V
V
V
Forward Voltage (Note 1) at IF = 1.0A  
at IF = 3.0A  
at IR=1.0mA  
Reverse Breakdown  
Voltage  
V(BR)R  
20  
-
-
V
Reverse Leakage  
Current (Note 1)  
at VR=20V  
-
-
-
-
1
mA  
mA  
μA  
10  
at VR=20V,TA=100℃  
-
-
-
-
10  
1
50  
2
at VR=2V  
IRM  
mA  
at VR=2V, TA=100℃  
μA  
15  
1.5  
75  
3
at VR=3V  
mA  
pF  
at VR=3V, TA=100℃  
Typical Junction Capacitance  
CJ  
-
110  
-
at VR = 2V, f = 1MHz  
Notes:  
1. Pulse Test: Pulse width200μs, Duty Cycle2%.  
SEMTECH ELECTRONICS LTD.  
(Subsidiary of Sino-Tech International Holdings Limited, a company  
listed on the Hong Kong Stock Exchange, Stock Code: 724)  
®
Dated : 24/11/2004  
1N5817W  
PACKAGE OUTLINE  
SOD-123  
Plastic surface mounted package; 2 leads  
ALL ROUND  
HE  
A
UNIT A  
b
c
D
E
H
v
1.15 0.6  
1.05 0.5  
0.135 2.7  
0.127 2.6  
1.65 3.9  
1.55 3.7  
mm  
0.2  
5°  
SEMTECH ELECTRONICS LTD.  
(Subsidiary of Sino-Tech International Holdings Limited, a company  
listed on the Hong Kong Stock Exchange, Stock Code: 724)  
®
Dated : 24/11/2004  

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