BCV26 [SEMTECH]

PNP Darlington Transistors; PNP达林顿晶体管
BCV26
型号: BCV26
厂家: SEMTECH CORPORATION    SEMTECH CORPORATION
描述:

PNP Darlington Transistors
PNP达林顿晶体管

晶体 晶体管 达林顿晶体管 光电二极管 PC
文件: 总2页 (文件大小:130K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BCV26 / BCV46  
PNP Darlington Transistors  
for preamplifier input applications  
SOT-23 Plastic Package  
Value  
O
Absolute Maximum Ratings (Ta = 25 C)  
Parameter  
Symbol  
-VCBO  
Unit  
V
BCV26  
BCV46  
BCV26  
BCV46  
40  
80  
30  
60  
Collector Base Voltage  
Collector Emitter Voltage  
-VCEO  
V
Emitter Base Voltage  
Collector Current  
-VEBO  
-IC  
10  
500  
V
mA  
mA  
mA  
mW  
Peak Collector Current  
Base Current  
-ICM  
-IB  
800  
100  
Total Power Dissipation  
Junction Temperature  
Storage Temperature Range  
Ptot  
Tj  
200  
O
C
150  
O
C
TS  
- 65 to + 150  
O
Characteristics at Ta = 25 C  
Parameter  
Symbol  
Min.  
Typ.  
Max.  
Unit  
DC Current Gain  
at -VCE = 5 V, -IC = 1 mA  
BCV26  
BCV46  
BCV26  
BCV46  
BCV26  
BCV46  
hFE  
hFE  
hFE  
hFE  
hFE  
hFE  
4000  
2000  
10000  
4000  
20000  
10000  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
at -VCE = 5 V, -IC = 10 mA  
at -VCE = 5 V, -IC = 100 mA  
Collector Cutoff Current  
at -VCB = 30 V  
at -VCB = 60 V  
BCV26  
BCV46  
-
-
-
-
100  
100  
-ICBO  
nA  
nA  
Emitter Cutoff Current  
at -VEB = 10 V  
Collector Base Breakdown Voltage  
at -IC = 100 µA  
Collector Emitter Breakdown Voltage  
at -IC = 10 mA  
Emitter Base Breakdown Voltage  
at -IE = 10 µA  
Collector Emitter Saturation Voltage  
at -IC = 100 mA, -IB = 0.1 mA  
Base Emitter Saturation Voltage  
at -IC = 100 mA, -IB = 0.1 mA  
Base Emitter On-state Voltage  
at -IC = 10 mA, -VCE = 5 V  
-IEBO  
-V(BR)CBO  
-V(BR)CEO  
-V(BR)EBO  
-VCE(sat)  
-VBE(sat)  
-VBE(on)  
fT  
-
-
100  
BCV26  
BCV46  
BCV26  
BCV46  
40  
80  
30  
60  
-
-
-
-
V
V
-
-
-
10  
-
-
V
-
1
V
-
-
-
1.5  
1.4  
-
V
-
V
Transition Frequency  
at -VCE = 5 V, -IC = 30 mA, f = 100 MHz  
-
220  
MHz  
SEMTECH ELECTRONICS LTD.  
(Subsidiary of Sino-Tech International Holdings Limited, a company  
listed on the Hong Kong Stock Exchange, Stock Code: 724)  
®
Dated : 18/08/2007  
BCV26 / BCV46  
Power Dissipation vs Ambient Temperature  
300  
250  
200  
150  
100  
50  
0
0
25  
100  
125  
50  
75  
150  
O
Ambient Temperature: Ta ( C)  
SEMTECH ELECTRONICS LTD.  
(Subsidiary of Sino-Tech International Holdings Limited, a company  
listed on the Hong Kong Stock Exchange, Stock Code: 724)  
®
Dated : 18/08/2007  

相关型号:

BCV26,215

BCV26; BCV46 - PNP Darlington transistors TO-236 3-Pin
NXP

BCV26,235

BCV26; BCV46 - PNP Darlington transistors TO-236 3-Pin
NXP

BCV26-T

暂无描述
NXP

BCV26-TAPE-13

TRANSISTOR 300 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal
NXP

BCV26-TAPE-7

TRANSISTOR 300 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal
NXP

BCV26/T3

TRANSISTOR 500 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, PLASTIC PACKAGE-3, BIP General Purpose Small Signal
NXP

BCV26BK

Small Signal Bipolar Transistor, 30V V(BR)CEO, 1-Element, PNP, Silicon,
CENTRAL

BCV26D87Z

Small Signal Bipolar Transistor, 1.2A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon
FAIRCHILD

BCV26E6327

Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon
INFINEON

BCV26E6327

500mA, 30V, PNP, Si, SMALL SIGNAL TRANSISTOR
ROCHESTER

BCV26E6327HTSA1

Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon,
INFINEON

BCV26E6433

Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon
INFINEON