MA700A [SEMTECH]
SILICON EPITAXIAL PLANAR TYPE SCHOTTKY BARRIER DIODES; 硅外延平面型肖特基势垒二极管
| 型号： | MA700A |
| 厂家： | 
SEMTECH CORPORATION |
| 描述： | SILICON EPITAXIAL PLANAR TYPE SCHOTTKY BARRIER DIODES |
| 文件： | 总1页 (文件大小：128K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MA700, MA700A
SILICON EPITAXIAL PLANAR TYPE
SCHOTTKY BARRIER DIODES
Max. 0.5
Max. 0.45
for ordinary wave detection
Min. 27.5
Max. 3.9
Min. 27.5
Min. 27.5
Max. 2.9
Min. 27.5
Max. 1.9
Max. 1.9
for super high speed switching
Black
Cathode Band
Black
Part No.
Black
"ST" Brand
Black
Cathode Band
Black
Part No.
XXX
ST
Features
XXX
• Low forward rise voltage (VF) and satisfactory wave
• detection efficiency (η)
• Small temperature coefficient of forward characteristic
• Extremely low reverse current (IR)
Glass Case DO-34
Dimensions in mm
Glass Case DO-35
Dimensions in mm
O
Absolute Maximum Ratings (Ta = 25 C)
Parameter
Symbol
VRM
Value
Unit
V
MA700
15
30
15
30
Peak Reverse Voltage
Reverse Voltage
MA700A
MA700
V
VR
MA700A
Forward Current
IF
IFM
Tj
30
mA
mA
Peak Forward Current
Junction Temperature
Storage Temperature Range
150
125
O
C
O
C
TS
- 55 to + 125
O
Characteristics at Ta = 25 C
Parameter
Symbol
VF
Typ.
Max.
Unit
Forward Voltage
at IF = 1 mA
at IF = 30 mA
-
-
0.4
1
V
Reverse Current
at VR = 15 V
at VR = 30 V
MA700
MA700A
IR
-
-
600
600
nA
Terminal Capacitance
at VR = 1 V, f = 1 MHz
CT
trr
1.3
1
-
-
-
pF
ns
%
Reverse Recovery Time
at IF = IR = 10 mA, Irr = 1 mA, RL = 100 Ω
Detection Efficiency
at Vin = 3 V(peak), f = 30 MHz, RL = 3.9 KΩ, CL = 10 pF
η
60
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 15/08/2007
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