MCR100-3 [SEMTECH]
SCR; SCR
| 型号： | MCR100-3 |
| 厂家： | 
SEMTECH CORPORATION |
| 描述： | SCR |
| 文件： | 总3页 (文件大小：226K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MCR100-3 … MCR100-8
G
K
A
TO-92 Plastic Package
Weight approx. 0.18g
MAXIMUM RATINGS (TJ=25°C unless otherwise noted.)
Rating
Symbol
Value
Unit
Peak Repetitive Forward and Reverse Blocking
Voltage, Note 1
(TJ=25 to 125°C, RGK=1KΩ)
MCR100-3
MCR100-4
MCR100-5
MCR100-6
MCR100-7
MCR100-8
100
200
300
400
500
600
VDRM
and
VRRM
Volts
Forward Current RMS
(All Conduction Angles)
IT(RMS)
ITSM
0.8
10
Amps
Amps
Peak Forward Surge Current, TA=25°C
(1/2 Cycle, Sine Wave, 60Hz)
Circuit Fusing (t=8.3ms)
Peak Gate Power - Forward, TA=25°C
Average Gate Power - Forward, TA=25°C
Peak Gate Current - Forward, TA=25°C
(300µs,120PPS)
I2t
PGM
PGF(AV)
0.415
0.1
0.01
A2s
Watts
Watt
IGFM
1
Amp
Peak Gate Voltage - Reverse
Operating Junction Temperature Range @ Rated VRRM and VDRM
Storage Temperature Range
VGRM
TJ
Ts
5
Volts
°C
°C
-40 to +125
-40 to +150
Note 1. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied
concurrent with negative potential on the anode.
GSP FORM A IS AVAILABLE
SEMTECH ELECTRONICS LTD. ( Wholly owned subsidiary of Honey Technology Ltd.)
®
Dated : 06/12/2003
MCR100-3 … MCR100-8
CHARACTERISTICS (TC=25°C, RGK=1KΩ unless otherwise noted.)
Characteristic
Symbol
IDRM,IRRM
Min
Max
Unit
Peak Forward or Reverse Blocking Current
(VAK=Rated VDRM or VRRM
)
-
-
10
µA
Forward “On” Voltage
VTM
1.7
Volts
(ITM=1A Peak @TA=25°C)
Gate Trigger Current(Continuous dc),Note 1
(Anode Voltage=7Vdc,RL=100 Ohms)
Gate Trigger Voltage(Continuous dc)
(Anode Voltage=7Vdc,RL=100 Ohms)
(Anode Voltage=Rated VDRM,RL=100 Ohms)
Holding Current
IGT
-
-
200
0.8
µA
VGT
Volts
IH
-
5
mA
(Anode Voltage=7Vdc,initiating current=20mA)
Note 1. RGK current is not included in measurement.
GSP FORM A IS AVAILABLE
SEMTECH ELECTRONICS LTD. ( Wholly owned subsidiary of Honey Technology Ltd.)
®
Dated : 06/12/2003
MCR100-3 … MCR100-8
100
90
1.0
0.9
0.8
0.7
80
70
60
50
0.6
0.5
40
30
0.4
0.3
0.2
20
10
-40 -25 -10
5
20 35
50 65 80 95 110
-40 -25
-10
5
20
35
50
65
80
〜
95
110
〜
TJ, Junction Temperature ( C)
TJ, Junction Temperature ( C)
Figure 1. Typical Gate Trigger Curent Versus
Junction Temperature
Figure 2. Typical Gate Trigger Voltage
Versus Junction Temperature
1000
1000
100
10
100
10
-40 -25 -10
5
20 35
50 65 80 95 110
-40 -25 -10
5
20 35
50 65 80 95 110
〜
TJ, Junction Temperature ( C)
Figure 4. Typical Latching Curent Versus
Junction Temperature
〜
TJ, Junction Temperature ( C)
Figure 3. Typical Holding Curent Versus
Junction Temperature
10
120
〜
MAXIMUM @ TJ=25 C
110
100
〜
MAXIMUM @ TJ=110 C
90
DC
1
80
70
60
50
〜
180 C
〜
90 C
0.4
〜
60 C
0.3
〜
30 C
0.2
0.1
40
0.5 0.8 1.1 1.4 1.7 2.0 2.3 2.6 2.9 3.2 3.5
0
0.1
0.5
VT, Instantaneous On-State Voltage (volts)
Figure 6. Typical On-State Characteristics
IT(RMS), RMS On-State Current (AMPS)
Figure 5. Typical RMS Current Derating
SEMTECH ELECTRONICS LTD. ( Wholly owned subsidiary of Honey Technology Ltd.)
®
Dated : 06/12/2003
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