MMBT5551 [SEMTECH]
NPN Silicon Epitaxial Planar Transistors; NPN硅外延平面晶体管
| 型号： | MMBT5551 |
| 厂家： | 
SEMTECH CORPORATION |
| 描述： | NPN Silicon Epitaxial Planar Transistors |
| 文件： | 总2页 (文件大小：194K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMBT5551
NPN Silicon Epitaxial Planar Transistors
for high voltage amplifier applications.
O
Absolute Maximum Ratings (Ta = 25 C)
SOT-23 Plastic Package
Parameter
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Symbol
VCEO
VCBO
VEBO
IC
Value
160
Unit
V
V
180
6
V
Collector Current
600
mA
mW
Power Dissipation
Ptot
200
O
Junction Temperature
Storage Temperature Range
Tj
150
C
O
C
TS
-55 to +150
O
Characteristics at Tamb=25 C
Parameter
Symbol
Min.
Max.
Unit
DC Current Gain
at VCE=5V, IC=1mA
at VCE=5V, IC=10mA
at VCE=5V, IC=50mA
hFE
hFE
hFE
80
80
30
-
250
-
-
-
-
Collector Emitter Breakdown Voltage
at IC=1mA
Collector Base Breakdown Voltage
at IC=100µA
Emitter Base Breakdown Voltage
at IE=10µA
Collector Cutoff Current
at VCB=120V
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
160
180
6
-
-
V
V
-
V
-
50
nA
Emitter Cutoff Current
at VEB=4V
IEBO
-
50
nA
Collector Saturation Voltage
at IC=10mA, IB=1mA
at IC=50mA, IB=5mA
VCE sat
VCE sat
-
-
0.15
0.2
V
V
Base Saturation Voltage
at IC=10mA, IB=1mA
at IC=50mA, IB=5mA
VBE sat
VBE sat
-
-
1
1
V
V
Gain Bandwidth Product
at VCE=10V, IC=10mA, f=100MHz
fT
100
-
300
6
MHz
pF
Collector Base Capacitance
at VCB=10V, f=1MHz
CCBO
Noise Figure
at VCE=5V, IC=200µA, RG=2KΩ, f=30Hz…15KHz
Thermal Resistance Junction to Ambient
NF
-
-
8
dB
RthA
200
K/W
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 16/11/2005
MMBT5551
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 16/11/2005
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