MMBT9013 [SEMTECH]
NPN Silicon Epitaxial Planar Transistors; NPN硅外延平面晶体管
| 型号： | MMBT9013 |
| 厂家： | 
SEMTECH CORPORATION |
| 描述： | NPN Silicon Epitaxial Planar Transistors |
| 文件： | 总2页 (文件大小：237K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMBT9013
NPN Silicon Epitaxial Planar Transistors
for switching and amplifier applications.
As complementary types the PNP transistor
MMBT9012 is recommended.
SOT-23 Plastic Package
O
Absolute Maximum Ratings (Ta = 25 C)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Symbol
VCBO
VCEO
VEBO
IC
Value
Unit
V
40
30
V
5
500
V
Collector Current
mA
mW
Power Dissipation
Ptot
200
O
Junction Temperature
Storage Temperature Range
Tj
150
C
O
C
Tstg
- 55 to + 150
O
Characteristics at Ta = 25 C
Parameter
Symbol
Min.
Max.
Unit
DC Current Gain
at VCE = 1 V, IC = 50 mA
Current Gain Group
G
H
hFE
hFE
hFE
100
160
40
250
400
-
-
-
-
at VCE = 1 V, IC = 500 mA
Collector Base Cutoff Current
at VCB = 35 V
Emitter Base Cutoff Current
at VEB = 5 V
Collector Bae Breakdown Voltage
at IC = 100 μA
Collector Emitter Breakdown Voltage
at IC = 1 mA
ICBO
IEBO
-
-
100
nA
nA
V
100
V(BR)CBO
V(BR)CEO
V(BR)EBO
VCE(sat)
VBE(sat)
VBE
40
30
5
-
-
V
Emitter Base Breakdown Voltage
at IE = 100 μA
-
V
Collector Emitter Saturation Voltage
at IC = 500 mA, IB = 50 mA
Base Emitter Saturation Voltage
at IC = 500 mA, IB = 50 mA
Base Emitter Voltage
at VCE = 1 V, IC = 100 mA
Gain Bandwidth Product
at VCE = 6 V, IC = 20 mA
-
0.6
1.2
1
V
-
V
-
V
fT
100
-
MHz
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 15/04/2009
MMBT9013
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 15/04/2009
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