MMBT9014 [SEMTECH]
NPN Silicon Epitaxial Planar Transistor; NPN硅外延平面晶体管
| 型号： | MMBT9014 |
| 厂家： | 
SEMTECH CORPORATION |
| 描述： | NPN Silicon Epitaxial Planar Transistor |
| 文件： | 总2页 (文件大小：188K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMBT9014
NPN Silicon Epitaxial Planar Transistor
for switching and AF amplifier applications
As complementary types the PNP
transistor MMBT9015 is recommended.
SOT-23 Plastic Package
O
Absolute Maximum Ratings (Ta = 25 C)
Parameter
Symbol
Value
Unit
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
VCBO
VCEO
VEBO
IC
50
V
V
45
5
100
V
mA
mW
Power Dissipation
Ptot
Tj
200
O
C
Junction Temperature
Storage Temperature Range
150
O
C
TS
- 55 to + 150
O
Characteristics at Ta = 25 C
Parameter
Symbol
Min.
Max.
Unit
DC Current Gain
at VCE = 5 V, IC = 1 mA
MMBT9014B
MMBT9014C
MMBT9014D
hFE
hFE
hFE
110
200
420
220
450
800
-
-
-
Collector Cutoff Current
at VCB = 50 V
Emitter Cutoff Current
at VEB = 5 V
Collector Base Breakdown Voltage
at IC = 100 µA
Collector Emitter Breakdown Voltage
at IC = 1 mA
ICBO
IEBO
-
-
50
50
-
nA
nA
V
V(BR)CBO
V(BR)CEO
V(BR)EBO
VCE(sat)
VBE(sat)
fT
50
45
5
-
V
Emitter Base Breakdown Voltage
at IE = 100 µA
-
V
Collector Emitter Saturation Voltage
at IC = 100 mA, IB = 5 mA
Base Emitter Saturation Voltage
at IC = 100 mA, IB = 5 mA
Gain Bandwidth Product
at VCE = 5 V, IC = 10 mA
Output Capacitance
at VCB = 10 V, f = 1 MHz
Noise Figure
at VCE = 5 V, IC = 200 µA, f = 1 KHz, RG = 2 KΩ
-
0.6
1
V
-
V
100
-
-
MHz
pF
dB
COB
6
NF
-
10
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 13/08/2007
MMBT9014
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 13/08/2007
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