MMBT9014B [UTC]
Transistor,;
| 型号： | MMBT9014B |
| 厂家： | 
Unisonic Technologies |
| 描述： | Transistor, 放大器 |
| 文件： | 总3页 (文件大小：126K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
MMBT9014
NPN SILICON TRANSISTOR
PRE-AMPLIFIER, LOW LEVEL
& LOW NOISE
FEATURES
* High Total Power Dissipation. (450mW)
* Excellent hFE Linearity.
* Complementary to UTC MMBT9015
ORDERING INFORMATION
Ordering Number
Pin Assignment
Packing
Package
SOT-23
Lead Free
Halogen Free
MMBT9014G-x-AE3-R
1
2
3
MMBT9014G-x-AE3-R
E
B
C
Tape Reel
MARKING
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
1 of 3
QW-R206-022,E
MMBT9014
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
VCEO
VCBO
VEBO
IC
RATINGS
UNIT
V
Collector-Emitter Voltage
Collector-Base Voltage
Emitter Base Voltage
Collector Current
45
50
V
5
V
100
mA
mW
°C
°C
Collector dissipation
Junction Temperature
Storage Temperature
PC
225
TJ
150
TSTG
-55 ~ +150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
VCEO
VCBO
VEBO
ICBO
TEST CONDITIONS
IC=100μA, IE=0
MIN TYP MAX UNIT
Collector-Emitter Voltage
Collector-Base Voltage
Emitter Base Voltage
50
45
5
V
V
IC=1mA, IB=0
IE=100μA, IC=0
VCB=50V, IE=0
VEB=5V, IC=0
VCE=5V,Ic=1mA
V
Collector cutoff current
Emitter Cutoff Current
DC Current Gain
50
100
nA
nA
IEBO
hFE
60
280 1000
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-emitter on voltage
Current-Gain-Bandwidth Product
Output Capacitance
VCE(SAT) IC=100mA, IB=5mA
VBE(SAT) IC=100mA, IB=5mA
VBE(ON) VCE=5V, IC=2mA
0.14
0.84
0.3
1.0
0.7
V
V
0.58 0.63
V
fT
VCE=5V, IC=10mA
150
270
2.2
0.9
MHz
pF
dB
COB
NF
VCB=10V, IE=0, f=1MHz
VCE=5V,IC=0.2mA,f=1KHz,RS=2KΩ
3.5
10
Noise Figure
CLASSIFICATION OF hFE
RANK
A
B
C
D
RANGE
60-150
100-300
200-600
400-1000
UNISONIC TECHNOLOGIES CO., LTD
2 of 3
QW-R206-022,E
www.unisonic.com.tw
MMBT9014
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
Static Characteristic
100
Dc Current Gain
VCE=5V
1000
500
90
IB=160μA
IB=140μA
IB=120μA
IB=100μA
IB=80μA
80
70
60
50
100
50
IB=60μA
40
30
20
10
0
IB=40μA
IB=20μA
10
0
10
50
1
1000
20
30
40
100
10
Collect-Emitter Voltage, VCE(V)
Collector Current, IC(mA)
Base-Emitter Saturation Voltage Collecter
Saturation Voltage
Current Gain-Bandwidth Product
1000
1000
500
VCE(SAT)
500
VCE=5V
100
50
100
50
VBE(SAT)
IC=20IB
10
10
1000
10
100
1
1
10
Collector Current, IC(mA)
1000
100
Collector Current, IC(mA)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
3 of 3
QW-R206-022,E
www.unisonic.com.tw
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