MMBT9015 [SEMTECH]
PNP Silicon Epitaxial Planar Transistors; PNP硅外延平面晶体管
| 型号： | MMBT9015 |
| 厂家： | 
SEMTECH CORPORATION |
| 描述： | PNP Silicon Epitaxial Planar Transistors |
| 文件： | 总2页 (文件大小：196K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMBT9015
PNP Silicon Epitaxial Planar Transistors
for switching and AF amplifier applications
As complementary types the NPN
transistor MMBT9014 is recommended.
SOT-23 Plastic Package
O
Absolute Maximum Ratings (Ta = 25 C)
Parameter
Symbol
Value
Unit
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
-VCBO
-VCEO
-VEBO
-IC
50
V
V
45
5
100
V
mA
mW
Power Dissipation
Ptot
200
O
Junction Temperature
Storage Temperature Range
Tj
150
C
O
C
TS
- 55 to + 150
O
Characteristics at Ta = 25 C
Parameter
Symbol
Min.
Max.
Unit
DC Current Gain
at -VCE = 5 V, -IC = 1 mA
MMBT9015B
MMBT9015C
MMBT9015D
hFE
hFE
hFE
125
220
420
250
475
800
-
-
-
Collector Cutoff Current
at -VCB = 50 V
Emitter Cutoff Current
at -VEB = 5 V
Collector Base Breakdown Voltage
at -IC = 100 µA
Collector Emitter Breakdown Voltage
at -IC = 1 mA
-ICBO
-IEBO
-
-
50
nA
nA
V
50
-V(BR)CBO
-V(BR)CEO
-V(BR)EBO
-VCE(sat)
-VBE(sat)
fT
50
45
5
-
-
-
V
Emitter Base Breakdown Voltage
at -IE = 100 µA
V
Collector Emitter Saturation Voltage
at -IC = 100 mA, -IB = 5 mA
Base Emitter Saturation Voltage
at -IC = 100 mA, -IB = 5 mA
Gain Bandwidth Product
at -VCE = 5 V, -IC = 10 mA
Output Capacitance
at -VCB = 10 V, f = 1 MHz
Noise Figure
at -VCE = 5 V, -IC = 200 µA, f = 1 KHz, RG = 2 KΩ
-
0.65
1
V
-
V
100
-
-
MHz
pF
dB
COB
7
NF
-
10
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 13/08/2007
MMBT9015
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 13/08/2007
相关型号：
MMBT9015A
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN
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