MMDT511LW [SEMTECH]

PNP Silicon Epitaxial Planar Digital Transistor; PNP硅外延平面晶体管数字


型号：	MMDT511LW
厂家：	SEMTECH CORPORATION
描述：	PNP Silicon Epitaxial Planar Digital Transistor PNP硅外延平面晶体管数字晶体晶体管
文件：	总3页 (文件大小：219K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

MMDT5110W…MMDT511ZW

PNP Silicon Epitaxial Planar Digital Transistor

Collector

(Output)

Base

(Input)

Emitter

(Common)

Resistance Values

Type

R1 (KΩ)

R2 (KΩ)

Type

R1 (KΩ)

R2 (KΩ)

MMDT5110W

MMDT5111W

MMDT5112W

MMDT5113W

MMDT5114W

MMDT5115W

MMDT5116W

MMDT5117W

MMDT5118W

MMDT5119W

MMDT511DW

MMDT511EW

MMDT511FW

MMDT511HW

MMDT511LW

MMDT511MW

MMDT511NW

MMDT511TW

MMDT511VW

MMDT511ZW

4.7

2.2

4.7

2.2

4.7

0.51

5.1

2.2

4.7

2.2

Absolute Maximum Ratings (T_a= 25 C)

Parameter

Symbol

-V_CBO

-V_CEO

-I_C

Value

Unit

Collector Base Voltage

Collector Emitter Voltage

Collector Current

100

Total Power Dissipation

Junction Temperature

Storage Temperature Range

P_tot

200

T_j

150

T_S

- 55 to + 150

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company

listed on the Hong Kong Stock Exchange, Stock Code: 724)

Dated : 06/06/2007

MMDT5110W…MMDT511ZW

Characteristics at T_a= 25 C

Parameter

Symbol Min.

Typ.

Max.

Unit

DC Current Gain

at -V_CE= 10 V, -I_C= 5 mA

160

MMDT5118/511L/511VW

MMDT5119/511D/511F/511HW

MMDT5111W

MMDT5112/511EW

MMDT511ZW

h_FE

200

400

460

MMDT5113/5114/511MW

MMDT511N/511TW

MMDT5110/5115/5116/5117W ¹⁾

Collector Base Cutoff Current

at -V_CB= 50 V

-I_CBO

100

Emitter Base Cutoff Current

at -V_EB= 6 V

MMDT5110/5115/5116/5117W

MMDT5113W

0.01

0.1

0.2

0.4

0.5

MMDT5112/5114/511D/511E/511M/511N/511TW

MMDT511ZW

MMDT5111W

MMDT511F/511HW

MMDT5119W

MMDT5118/511L/511VW

-I_EBO

1.5

Collector Base Breakdown Voltage

at -I_C= 10 µA

-V_(BR)CBO

-V_(BR)CEO

-V_CEsat

Collector Emitter Breakdown Voltage

at -I_C= 2 mA

Collector Emitter Saturation Voltage

at -I_C= 10 mA, -I_B= 0.5 mA

0.3

Input Voltage (ON)

at -V_O= 0.3 V, -I_O= 20 mA

at -V_O= 0.3 V, -I_O= 2 mA

at -V_O= 0.3 V, -I_O= 10 mA

at -V_O= 0.2 V, -I_O= 5 mA

at -V_O= 0.3 V, -I_O= 2 mA

at -V_O= 0.3 V, -I_O= 5 mA

at -V_O= 0.2 V, -I_O= 5 mA

at -V_O= 0.3 V, -I_O= 5 mA

at -V_O= 0.3 V, -I_O= 1 mA

MMDT511V/511L/5119/511H/5118W

2.5

1.1

1.7

1.3

1.4

MMDT511FW

MMDT511TW

MMDT511DW

MMDT511EW

MMDT5111W

MMDT5112W

MMDT5113W

MMDT511MW

MMDT511ZW

MMDT511NW

MMDT5114W

-V_I(ON)

Rank Classification: Q: 160~260, R: 210~340, S: 290~460, No-rank: 160~460

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company

listed on the Hong Kong Stock Exchange, Stock Code: 724)

Dated : 06/06/2007

MMDT5110W…MMDT511ZW

Characteristics at T_a= 25 C

Parameter

Symbol Min.

Typ.

Max.

Unit

Input Voltage (OFF)

at -V_CC= 5 V, -I_O= 100 µA

MMDT511V/511L/5111/5112/5113W

0.5

MMDT5118/5119/511M/511Z/511NW

MMDT511H/511F/5114W

MMDT511TW

MMDT511DW

MMDT511EW

0.3

0.4

-V_I(OFF)

0.8

Transition Frequency

at -V_CB= 10 V, -I_E= 5 mA, f = 100 MHz

f_T

250

MHz

Input Resistance

MMDT5118W

MMDT5119W

0.51

MMDT511H/511M/511VW

MMDT5116/511F/511L/511N/511ZW

MMDT5111/5114/5115W

MMDT5112/5117/511TW

MMDT5110/5113/511D/511EW

2.2

4.7

- 30%

+ 30%

KΩ

Resistance Ratio

0.047

0.1

0.21

0.47

MMDT511MW

MMDT511NW

MMDT5118/5119W

MMDT511ZW

MMDT5114W

MMDT511TW

MMDT511FW

MMDT511VW

MMDT5111/5112/5113/511LW

MMDT511HW

MMDT511EW

0.08

0.17

0.37

0.8

0.17

1.7

3.7

0.12

0.25

0.57

1.2

0.27

2.6

5.7

R1/R2

0.22

2.14

4.7

MMDT511DW

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company

listed on the Hong Kong Stock Exchange, Stock Code: 724)

Dated : 06/06/2007

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