MMDT511ZW [SEMTECH]
PNP Silicon Epitaxial Planar Digital Transistor; PNP硅外延平面晶体管数字型号: | MMDT511ZW |
厂家: | SEMTECH CORPORATION |
描述: | PNP Silicon Epitaxial Planar Digital Transistor |
文件: | 总3页 (文件大小:219K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
MMDT5110W…MMDT511ZW
PNP Silicon Epitaxial Planar Digital Transistor
Collector
(Output)
R1
Base
(Input)
R2
Emitter
(Common)
Resistance Values
Type
R1 (KΩ)
47
R2 (KΩ)
Type
R1 (KΩ)
47
R2 (KΩ)
10
MMDT5110W
MMDT5111W
MMDT5112W
MMDT5113W
MMDT5114W
MMDT5115W
MMDT5116W
MMDT5117W
MMDT5118W
MMDT5119W
-
10
22
47
47
-
MMDT511DW
MMDT511EW
MMDT511FW
MMDT511HW
MMDT511LW
MMDT511MW
MMDT511NW
MMDT511TW
MMDT511VW
MMDT511ZW
10
47
22
22
4.7
2.2
4.7
2.2
4.7
22
10
47
10
10
4.7
47
10
4.7
22
-
47
-
47
0.51
1
5.1
10
2.2
4.7
2.2
22
O
Absolute Maximum Ratings (Ta = 25 C)
Parameter
Symbol
-VCBO
-VCEO
-IC
Value
Unit
V
Collector Base Voltage
Collector Emitter Voltage
Collector Current
50
50
V
100
mA
mW
Total Power Dissipation
Junction Temperature
Storage Temperature Range
Ptot
200
O
C
Tj
150
O
C
TS
- 55 to + 150
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 06/06/2007
MMDT5110W…MMDT511ZW
O
Characteristics at Ta = 25 C
Parameter
Symbol Min.
Typ.
Max.
Unit
DC Current Gain
at -VCE = 10 V, -IC = 5 mA
20
30
35
60
60
80
80
160
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MMDT5118/511L/511VW
MMDT5119/511D/511F/511HW
MMDT5111W
MMDT5112/511EW
MMDT511ZW
hFE
-
200
-
400
460
MMDT5113/5114/511MW
MMDT511N/511TW
MMDT5110/5115/5116/5117W 1)
Collector Base Cutoff Current
at -VCB = 50 V
-ICBO
-
-
100
nA
Emitter Base Cutoff Current
at -VEB = 6 V
MMDT5110/5115/5116/5117W
MMDT5113W
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.01
0.1
0.2
0.4
0.5
1
MMDT5112/5114/511D/511E/511M/511N/511TW
MMDT511ZW
MMDT5111W
MMDT511F/511HW
MMDT5119W
MMDT5118/511L/511VW
-IEBO
mA
1.5
2
Collector Base Breakdown Voltage
at -IC = 10 µA
-V(BR)CBO
-V(BR)CEO
-VCEsat
50
50
-
-
-
-
-
-
V
V
V
Collector Emitter Breakdown Voltage
at -IC = 2 mA
Collector Emitter Saturation Voltage
at -IC = 10 mA, -IB = 0.5 mA
0.3
Input Voltage (ON)
at -VO = 0.3 V, -IO = 20 mA
at -VO = 0.3 V, -IO = 20 mA
at -VO = 0.3 V, -IO = 2 mA
at -VO = 0.3 V, -IO = 2 mA
at -VO = 0.3 V, -IO = 2 mA
at -VO = 0.3 V, -IO = 10 mA
at -VO = 0.2 V, -IO = 5 mA
at -VO = 0.3 V, -IO = 2 mA
at -VO = 0.3 V, -IO = 5 mA
at -VO = 0.2 V, -IO = 5 mA
at -VO = 0.3 V, -IO = 5 mA
at -VO = 0.3 V, -IO = 1 mA
MMDT511V/511L/5119/511H/5118W
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
3
2.5
2.5
5
4
3
3
3
1.1
1.7
1.3
1.4
MMDT511FW
MMDT511TW
MMDT511DW
MMDT511EW
MMDT5111W
MMDT5112W
MMDT5113W
MMDT511MW
MMDT511ZW
MMDT511NW
MMDT5114W
-VI(ON)
V
1)
h
Rank Classification: Q: 160~260, R: 210~340, S: 290~460, No-rank: 160~460
FE
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 06/06/2007
MMDT5110W…MMDT511ZW
O
Characteristics at Ta = 25 C
Parameter
Symbol Min.
Typ.
Max.
Unit
V
Input Voltage (OFF)
at -VCC = 5 V, -IO = 100 µA
MMDT511V/511L/5111/5112/5113W
0.5
0.5
-
-
-
-
-
-
-
-
-
-
-
-
MMDT5118/5119/511M/511Z/511NW
MMDT511H/511F/5114W
MMDT511TW
MMDT511DW
MMDT511EW
0.3
0.4
1
-VI(OFF)
0.8
Transition Frequency
at -VCB = 10 V, -IE = 5 mA, f = 100 MHz
fT
-
250
-
MHz
Input Resistance
MMDT5118W
MMDT5119W
0.51
1
MMDT511H/511M/511VW
MMDT5116/511F/511L/511N/511ZW
MMDT5111/5114/5115W
MMDT5112/5117/511TW
MMDT5110/5113/511D/511EW
2.2
4.7
10
22
47
R1
- 30%
+ 30%
KΩ
Resistance Ratio
-
-
0.047
0.1
0.1
0.21
0.21
0.47
0.47
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MMDT511MW
MMDT511NW
MMDT5118/5119W
MMDT511ZW
MMDT5114W
MMDT511TW
MMDT511FW
MMDT511VW
MMDT5111/5112/5113/511LW
MMDT511HW
MMDT511EW
0.08
-
0.17
-
0.37
-
0.8
0.17
1.7
3.7
0.12
-
0.25
-
0.57
-
1.2
0.27
2.6
5.7
R1/R2
1
0.22
2.14
4.7
MMDT511DW
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 06/06/2007
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