MMDTC123W [SEMTECH]
NPN Silicon Epitaxial Planar Digital Transistor; NPN硅外延平面晶体管数字
| 型号： | MMDTC123W |
| 厂家： | 
SEMTECH CORPORATION |
| 描述： | NPN Silicon Epitaxial Planar Digital Transistor |
| 文件： | 总1页 (文件大小：131K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMDTC123W
NPN Silicon Epitaxial Planar Digital Transistor
Collector
(Output)
Resistance Values
R1
R1 (KΩ) R2 (KΩ)
2.2 47
Base
(Input)
R2
Emitter
(Common)
O
Absolute Maximum Ratings (Ta = 25 C)
Parameter
Symbol
Value
Unit
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
VCBO
VCEO
VEBO
50
50
10
V
V
V
Positive
Input Voltage
+ 12
- 5
VI
V
Negative
Collector Current
IC
Ptot
Tj
100
200
mA
Total Power Dissipation
Junction Temperature
Storage Temperature Range
mW
O
C
150
O
C
TS
- 65 to + 150
O
Characteristics at Ta = 25 C
Parameter
Symbol
Min.
100
Typ.
-
Max.
-
Unit
DC Current Gain
hFE
ICBO
ICEO
IEBO
-
at VCE = 5 V, IC = 10 mA
Collector Base Cutoff Current
at VCB = 50 V
-
-
-
-
-
-
-
-
100
1
nA
µA
µA
V
Collector Emitter Cutoff Current
at VCE = 30 V
-
Emitter Base Cutoff Current
at VEB = 5 V
-
180
0.1
0.5
-
Collector Emitter Saturation Voltage
at IC = 5 mA, IB = 0.25 mA
VCEsat
VI(off)
VI(on)
CC
-
-
Input Off Voltage
V
at VCE = 5 V, IC = 100 µA
Input On Voltage
1.1
-
V
at VCE = 0.3 V, IC = 5 mA
Collector Capacitance
at VCB = 10 V, f = 1 MHz
2.5
pF
Input Resistance
Resistance Ratio
R1
1.54
17
2.2
21
2.86
26
KΩ
R2/R1
-
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 28/11/2006
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