SC1214 [SEMTECH]

High Speed, Combi-SenseTM Two-Phase, Synchronous MOSFET Driver; 高速,组合式SenseTM两相同步MOSFET驱动器
SC1214
型号: SC1214
厂家: SEMTECH CORPORATION    SEMTECH CORPORATION
描述:

High Speed, Combi-SenseTM Two-Phase, Synchronous MOSFET Driver
高速,组合式SenseTM两相同步MOSFET驱动器

驱动器
文件: 总8页 (文件大小:170K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SC1214  
High Speed, Combi-SenseTM  
Two-Phase, Synchronous MOSFET Driver  
POWER MANAGEMENT  
Description  
Features  
High efficiency  
+12V gate drive voltage  
High peak drive current  
Adaptive non-overlapping gate drives provide  
shoot-through protection  
Support Combi-SenseTM and VID-on-fly operations  
Fast rise and fall times (15ns typical with 3000pf  
load)  
Ultra-low (<30ns) propagation delay (BG going low)  
Floating top gate drive  
Crowbar function for over voltage protection  
High frequency (to 1.5 MHz) operation allows use  
of small inductors and low cost ceramic capacitors  
Under-voltage-lockout  
The SC1214 is a high speed, Combi-SenseTM, two-phase  
driver designed to drive high-side and low-side MOSFETs  
in two synchronous Buck converters. The driver com-  
bined with Combi-Sense PWM controllers, such as  
Semtech SC2643VX or SC2643, provides a cost effec-  
tive two-phase voltage regulator for advanced micro-  
processors  
The Combi-SenseTM is a technique to sense the inductor  
current for peak current mode control of voltage regula-  
tor without using sensing resistor. It provides the follow-  
ing advantages:  
- No costly precision sensing resistor  
- Lossless current sensing  
- High level noise free signal  
- Fast response  
Low quiescent current  
- Suitable for wide range of duty cycle  
The detailed explanation of the technique can be found  
in the Applications Information section.  
A 30ns max propagation delay from input transition to  
the gate of the power FET’s guarantees operation at high  
switching frequencies. Internal overlap protection circuit  
prevents shoot-through from Vin to PGND in the main  
and synchronous MOSFETs. The adaptive overlap pro-  
tection circuit ensures the bottom FET does not turn on  
until the top FET source has reached 1V, to prevent cross-  
conduction.  
Applications  
Intel Pentium® processor power supplies  
AMD AthlonTM and AMD-K8TM processor power  
supplies  
High current low voltage DC-DC converters  
High current drive capability allows fast switching, thus  
reducing switching losses at high (up to 1.5MHz) frequen-  
cies without causing thermal stress on the driver.  
Under-voltage-lockout and over-temperature shutdown  
features are included for proper and safe operation.  
Timed latches and improved robustness are built into  
the housekeeping functions such as the Under Voltage  
Lockout and adaptive Shoot-through protection circuitry  
to prevent false triggering and to assure safe operation.  
The SC1214 is offered in a TSSOP-20 package.  
1
www.semtech.com  
May 9, 2005  
SC1214  
POWER MANAGEMENT  
Typical Application Circuit  
SC1214  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
10  
9
DRN2  
PGND  
TG2  
BG2  
VREG2  
VIN2  
VPN2  
NC  
8
BST2  
CO2  
7
6
NC  
5
VPN1  
VIN1  
VREG1  
BG1  
4
CO1  
3
BST1  
TG1  
2
1
PGND  
DRN1  
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2005 Semtech Corp.  
2
SC1214  
POWER MANAGEMENT  
Absolute Maximum Ratings  
Exceeding the specifications below may result in permanent damage to the device, or device malfunction. Operation outside of the parameters specified  
in the Electrical Characteristics section is not implied.  
Parameter  
Symbol  
Conditions  
Maximum  
Units  
VI N Supply Voltage  
VI N  
VBST-DRN, VTG-DRN  
VBST-PGND  
VBST-PULSE  
VDRN-PGND  
VDRN-PULSE  
VBG-PGND  
VREG-PGND  
VPN  
16  
11  
V
V
BST, TG to DRN  
BST to PGND  
40  
V
BST to PGND Pulse  
DRN to PGND  
tPULSE < 100ns  
tPULSE < 200ns  
45  
V
-2 to 30  
-5 to 35  
11  
V
DRN to PGND Pulse  
BG to PGND  
V
V
VREG to PGND  
11  
V
VPN to PGND  
16  
V
VPN to PGND Pulse  
PWM Input  
VPN-PULSE  
CO  
tPULSE < 100ns  
20  
V
-0.3 to 8.5  
1.76  
V
Continuous Power Dissipation  
Thermal Resistance Junction to Case  
Operating Junction Temperature Range  
Storage Temperature Range  
Lead Temperature (Soldering) 10 Sec.  
PD  
TA = 25°C, TJ =125°C  
W
°C/W  
°C  
°C  
°C  
17  
TJ  
0 to +150  
-65 to +150  
300  
TSTG  
TLEAD  
NOTE:  
(1) This device is ESD sensitive. Use of standard ESD handling precautions is required.  
Electrical Characteristics  
Unless specified: TA = 25°C; VIN = 12V; VREG = 8.5V  
Parameter  
Symbol  
Conditions  
Min  
Typ  
Max  
Units  
Power Supply  
Supply Voltage  
VI N  
9
12  
15  
V
Quiescent Current, Operating  
Under Voltage Lockout  
Start Threshold of VREG Voltage  
Hysteresis  
Iq_op  
3.0  
mA  
VREG_START  
VhysUVLO  
4
4.3  
V
160  
mV  
Internal LDO  
LDO Output  
VREG  
VI N = 9V to 15V  
VI N = 5V to 8.8V  
8.5  
0.3  
V
V
Drop Out Voltage  
VDROP  
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2005 Semtech Corp.  
3
SC1214  
POWER MANAGEMENT  
Electrical Characteristics (Cont.)  
Unless specified: TA = 25°C; VIN = 12V; VREG = 8.5V  
Parameter  
Symbol  
Conditions  
Min  
Typ  
Max  
Units  
CO1, CO2  
Logic High Input Voltage  
Logic Low Input Voltage  
Thermal Shutdown  
Over Temperature Trip Point  
Hysteresis  
VCO_H  
VCO_L  
2.0  
V
V
0.8  
TOTP  
155  
10  
°C  
°C  
THYST  
High Side Driver (TG1, TG2)  
RSRC_TG  
RSINK_TG  
tR_TG  
1.5  
1.0  
15  
10  
37  
30  
3.0  
2.0  
Output Impedance  
Ohm  
VBST - VDRN = 8.5V  
Rise Time  
CL = 3.3nF, VBST - VDRN = 8.5V  
CL = 3.3nF, VBST - VDRN = 8.5V  
VBST - VDRN = 8.5V  
ns  
ns  
ns  
ns  
Fall Time  
tF_TG  
Propagation Delay, TG Going High  
Propagation Delay, TG Going Low  
Low-Side Driver (BG1, BG2)  
tPDH_TG  
tPDL_TG  
VBST - VDRN = 8.5V  
RSRC_BG  
RSINK_BG  
tR_BG  
1.5  
1.5  
10  
10  
20  
27  
75  
3.0  
3.0  
Output Impedance  
VREG = 8.5V  
Ohm  
Rise Time  
CL = 3.3nF, VREG = 8.5V  
CL = 3.3nF, VREG = 8.5V  
VREG = 8.5V  
ns  
ns  
ns  
ns  
ns  
Fall Time  
tF_BG  
Propagation Delay, BG Going High  
Propagation Delay, BG Going Low  
BG1, BG2 Minimum Off-time(1)  
Under-Voltage-Lockout Time Delay  
tPDH_BG  
tPDL_BG  
tOFF_BG  
VREG = 8.5V  
V
V
REG ramping up  
tPDH_UVLO  
tPDL_UVLO  
2
2
µs  
µs  
REG ramping down  
NOTE:  
(1) Guaranteed by design.  
www.semtech.com  
2005 Semtech Corp.  
4
SC1214  
POWER MANAGEMENT  
Timing Diagrams  
CO  
DRN  
TG  
1.0V  
tPDL_TG tF_TG  
tPDH_TG  
1.4V  
tR_TG  
BG  
tPDL_BG  
tF_BG  
tPDH_BG  
tR_BG  
Rising Edge Transition  
Falling Edge Transition  
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2005 Semtech Corp.  
5
SC1214  
POWER MANAGEMENT  
Ordering Information  
Pin Configurations  
Device  
Package  
TSSOP-20  
TSSOP-20  
Temp. Range( Tj)  
0 - 125°C  
Top View  
SC1214TSTR(1)  
SC1214TSTRT(1)(2)  
DRN1  
1
0 - 125°C  
PGND  
BG1  
VREG1  
VIN1  
VPN1  
NC  
CO2  
BST2  
TG2  
20  
19  
18  
17  
16  
15  
14  
13  
12  
11  
TG1  
BST1  
CO1  
2
3
4
Note:  
(1) Only available in tape and reel packaging. A reel  
contains 2500 devices.  
(2) Lead free product. This product is fully WEEE and RoHS  
compliant.  
NC  
5
VPN2  
VIN2  
VREG2  
BG2  
6
7
8
9
PGND  
DRN2  
10  
(20-Pin TSSOP)  
Pin Descriptions  
Pin#  
Pin Name  
Pin Function  
Output gate drive for the switching (top) MOSFET.  
2,12  
TG1, TG2  
The power phase node (or switching node) of the synchronous buck converter. This pin can be  
subjected to a negative spike up to -VREG relative to PGND without affecting operation.  
1,11  
DRN1, DRN2  
Bootstrap pin. A capacitor is connected between BST and DRN pins to develop the floating  
bootstrap voltage for the high-side MOSFET. The capacitor value is typically 1µF (ceramic).  
3, 13  
18,8  
4,14  
BST1, BST2  
VREG1,VREG2 LDO output. Decouple with 1µF to 4.7µF (ceramic) with lead length no more than 0.2" (5mm).  
Logic level PWM input signal to the SC1214 supplied by external controller. An internal  
CO1, CO2  
50kohm resistor is connected from this pin to PGND.  
Virtual Phase Node. Connect an RC between this pin and the output sense point to Enable  
VPN1, VPN2  
16,6  
Combi-Sense TM operation. See the Typical Application Circuit.  
10, 20  
19,9  
PGND  
Ground. Keep these pins close to the synchronous MOSFETs source.  
BG1, BG2  
Output gate drive for the synchronous (bottom) MOSFET.  
Supply power for low gate drive, LDO and the internal Combi-Sense TM circuitry. Connect to  
input power rail of the converter.  
17,7  
VIN1,VIN2  
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2005 Semtech Corp.  
6
SC1214  
POWER MANAGEMENT  
Block Diagram  
VIN1,2  
LDO  
VREG1,2  
UVLO  
LOGIC  
VPN1,2  
BST1,2  
TG1,2  
CONTROL  
&
OVERLAP  
PROT ECTION  
CIRCUIT  
CO1,2  
PGND  
DRN1,2  
BG1,2  
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2005 Semtech Corp.  
7
SC1214  
POWER MANAGEMENT  
Outline Drawing - TSSOP-20  
DIMENSIONS  
INCHES MILLIMETERS  
A
DIM  
A
D
E
MIN NOM MAX MIN NOM MAX  
e
-
-
-
-
-
-
-
-
-
-
-
-
.047  
1.20  
0.15  
1.05  
0.30  
0.20  
N
A1 .002  
A2 .031  
.006 0.05  
.042 0.80  
.012 0.19  
.007 0.09  
2X E/2  
b
.007  
.003  
c
E1  
D
.251 .255 .259 6.40 6.50 6.60  
E1 .169 .173 .177 4.30 4.40 4.50  
PIN 1  
E
.252 BSC  
.026 BSC  
6.40 BSC  
0.65 BSC  
INDICATOR  
e
L
L1  
N
.018 .024 .030 0.45 0.60 0.75  
(.039)  
(1.0)  
ccc  
C
1 2 3  
e/2  
20  
20  
2X N/2 TIPS  
-
-
01  
0°  
8°  
0°  
8°  
B
aaa  
.004  
.004  
.008  
0.10  
0.10  
0.20  
bbb  
ccc  
D
aaa  
SEATING  
C
A2  
A
D
PLANE  
H
C
A1  
bxN  
c
bbb  
C
A-B  
GAGE  
PLANE  
0.25  
L
01  
(L1)  
DETAIL  
A
SEE DETAIL  
A
SIDE VIEW  
NOTES:  
1. CONTROLLING DIMENSIONS ARE IN MILLIMETERS (ANGLES IN DEGREES).  
2. DATUMS -A- AND -B- TO BE DETERMINED AT DATUM PLANE -H-  
3. DIMENSIONS "E1" AND "D" DO NOT INCLUDE MOLD FLASH, PROTRUSIONS  
OR GATE BURRS.  
4. REFERENCE JEDEC STD MO-153, VARIATION AC.  
Land Pattern - TSSOP-20  
X
DIMENSIONS  
DIM  
INCHES  
(.222)  
.161  
MILLIMETERS  
(5.65)  
4.10  
0.65  
0.40  
1.55  
7.20  
C
G
P
X
Y
Z
(C)  
G
Y
Z
.026  
.016  
.061  
.283  
P
NOTES:  
1. THIS LAND PATTERN IS FOR REFERENCE PURPOSES ONLY.  
CONSULT YOUR MANUFACTURING GROUP TO ENSURE YOUR  
COMPANY'S MANUFACTURING GUIDELINES ARE MET.  
Contact Information  
Semtech Corporation  
Power Management Products Division  
200 Flynn Road, Camarillo, CA 93012  
Phone: (805)498-2111 FAX (805)498-3804  
www.semtech.com  
2005 Semtech Corp.  
8

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