SLVU2.8-4TE [SEMTECH]
EPD TVS⑩ Diodes Array For ESD and Latch-Up Protection; 环保署TVS⑩二极管阵列用于ESD和闩锁保护
| 型号： | SLVU2.8-4TE |
| 厂家： | 
SEMTECH CORPORATION |
| 描述： | EPD TVS⑩ Diodes Array For ESD and Latch-Up Protection |
| 文件： | 总8页 (文件大小：194K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SLVU2.8-4
EPD TVS Diode Array
For ESD and Latch-Up Protection
PROTECTION PRODUCTS
Features
Description
The SLV series of transient voltage suppressors are
designed to protect low voltage, state-of-the-art CMOS
semiconductors from transients caused by electro-
static discharge (ESD), cable discharge events (CDE),
lightning and other induced voltage surges.
u 400 Watts peak pulse power (tp = 8/20µs)
u Transient protection for high speed data lines to
IEC 61000-4-2 (ESD) 15kV (air), 8kV (contact)
IEC 61000-4-4 (EFT) 40A (tp = 5/50ns)
IEC 61000-4-5 (Lightning) 24A (tp = 8/20µs)
u Protects two line pairs (four lines)
u Comprehensive pin out for easy board layout
u Low capacitance
The devices are constructed using Semtechs propri-
etary EPD process technology. The EPD process pro-
vides low standoff voltages with significant reductions
in leakage currents and capacitance over silicon-
avalanche diode processes. The SLVU2.8-4 features
integrated low capacitance compensation diodes that
reduce the maximum capacitance to <8pF per line.
This, combined with low leakage current, means signal
integrity is preserved in high-speed applications such
as 10/100 Ethernet.
u Low leakage current
u Low operating and clamping voltages
u Solid-state EPD TVS process technology
Mechanical Characteristics
u JEDEC SO-8 package
u Molding compound flammability rating: UL 94V-0
u Marking : Part number, date code, logo
u Packaging : Tape and Reel per EIA 481
The SLVU2.8-4 is in an SO-8 package and may be used
to protect two high-speed line pairs. The flow-thru
design minimizes trace inductance and reduces voltage
overshoot associated with ESD events. The low
clamping voltage of the SLVU2.8-4 minimizes the
stress on the protected IC.
Applications
u 10/100 Ethernet
u WAN/LAN Equipment
u Switching Systems
u Desktops, Servers, & Notebooks
u Instrumentation
The SLV series TVS diodes will meet the surge require-
ments of IEC 61000-4-2, Level 4.
u Base Stations
u Analog Inputs
Circuit Diagram
Schematic & PIN Configuration
SO-8 (Top View)
www.semtech.com
Revision 9/2000
1
SLVU2.8-4
PROTECTION PRODUCTS
Absolute Maximum Rating
Rating
Peak Pulse Power (tp = 8/20ms)
Peak Pulse Current (tp = 8/20ms)
Symbol
Ppk
Value
400
24
Units
Watts
A
IPP
ESD per IEC 61000-4-2 (Air)
ESD per IEC 61000-4-2 (Contact)
25
15
VESD
kV
Lead Soldering Temperature
Operating Temperature
Storage Temperature
TL
TJ
260 (10 seconds)
-55 to +125
oC
oC
oC
TSTG
-55 to +150
Electrical Characteristics
SLVU2.8-4
Parameter
Symbol
VRWM
VPT
Conditions
Minimum
Typical
Maximum
Units
Reverse Stand-Off Voltage
Punch-Through Voltage
Snap-Back Voltage
Reverse Leakage Current
2.8
V
V
IPT = 2µA
3.0
2.8
VSB
ISB = 50mA
V
IR
VRWM = 2.8V, T=25°C
(Each Line)
1
µA
Clamping Voltage
Clamping Voltage
Clamping Voltage
VC
VC
VC
IPP = 2A, tp = 8/20µs
(Each Line)
5.5
8.5
15
V
V
V
IPP = 5A, tp = 8/20µs
(Each Line)
IPP = 24A, tp = 8/20µs
(Each Line)
Maximum Peak Pulse Current
Junction Capacitance
IPP
Cj
tp = 8/20µs
24
8
A
VR = 0V, f = 1MHz
(Each Line)
5
pF
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ã 2000 Semtech Corp.
2
SLVU2.8-4
PROTECTION PRODUCTS
Typical Characteristics
Non-Repetitive Peak Pulse Power vs. Pulse Time
Power Derating Curve
110
100
90
80
70
60
50
40
30
20
10
0
10
1
0.1
0.01
0
25
50
75
100
125
150
0.1
1
10
100
1000
Ambient Temperature - TA (oC)
Pulse Duration - tp ( s)
µ
Pulse Waveform
Clamping Voltage vs. Peak Pulse Current
14
12
10
8
110
100
90
80
70
60
50
40
30
20
10
0
Waveform
Parameters:
tr = 8µs
td = 20µs
e-t
6
td = IPP/2
4
Waveform
Parameters:
tr = 8µs
2
td = 20µs
0
0
5
10
15
20
25
0
5
10
15
20
25
30
Peak Pulse Current - IPP (A)
Time (µs)
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ã 2000 Semtech Corp.
3
SLVU2.8-4
PROTECTION PRODUCTS
Applications Information
SLVU2.8-4 Circuit Diagram
Device Connection for Protection of Four Data Lines
Electronic equipment is susceptible to transient distur-
bances from a variety of sources including: ESD to an
open connector or interface, direct or nearby lightning
strikes to cables and wires, and charged cables hot
plugged into I/O ports. The SLVU2.8-4 is designed to
protect sensitive components from damage and latch-
up which may result from such transient events. The
SLVU2.8-4 can be configured to protect two high-
speed line pairs. The device is connected as follows:
1. Protection of two high-speed line pairs:
The SLVU2.8-4 is designed such that the data lines
are routed through the device. The first line pair
enters at pins 1 and 2 and exit at pins 8 and 7
respectively. The second line pair enters at pins 3
and 4 and exits at pins 6 and 5. The traces must
be connected at the bottom of the device as
shown.
Low Capacitance Protection of Two Differential Line
Pairs
Line 1
Line 2
Line 1
Line 2
1
2
8
7
Circuit Board Layout Recommendations for Suppres-
sion of ESD.
Good circuit board layout is critical for the suppression
of ESD induced transients. The following guidelines are
recommended:
3
4
6
5
Line 3
Line 4
Line 3
Line 4
l
l
l
l
Place the SLVU2.8-4 near the input terminals or
connectors to restrict transient coupling.
Minimize the path length between the TVS and the
protected line.
Minimize all conductive loops including power and
ground loops.
The ESD transient return path to ground should be
kept as short as possible.
l
l
Never run critical signals near board edges.
Use ground planes whenever possible.
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ã 2000 Semtech Corp.
4
SLVU2.8-4
PROTECTION PRODUCTS
Typical Applications
10/100 Ethernet Protection Circuit
www.semtech.com
ã 2000 Semtech Corp.
5
SLVU2.8-4
PROTECTION PRODUCTS
Applications Information (continued)
EPD TVS Characteristics
PP
The SLVU2.8-4 is constructed using Semtechs propri-
etary EPD technology. The structure of the EPD TVS is
vastly different from the traditional pn-junction devices.
At voltages below 5V, high leakage current and junction
capacitance render conventional avalanche technology
impractical for most applications. However, by utilizing
the EPD technology, the SLVU2.8-4 can effectively
operate at 2.8V while maintaining excellent electrical
characteristics.
The EPD TVS employs a complex nppn structure in
contrast to the pn structure normally found in tradi-
tional silicon-avalanche TVS diodes. The EPD mecha-
nism is achieved by engineering the center region of
the device such that the reverse biased junction does
not avalanche, but will punch-through to a conduct-
ing state. This structure results in a device with supe-
rior dc electrical parameters at low voltages while
maintaining the capability to absorb high transient
currents.
EPD TVS VI Characteristic Curve
The IV characteristic curve of the EPD device is shown
in Figure 1. The device represents a high impedance
to the circuit up to the working voltage (VRWM). During a
transient event, the device will begin to conduct as it is
biased in the reverse direction. When the punch-
through voltage (VPT) is exceeded, the device enters a
low impedance state, diverting the transient current
away from the protected circuit. When the device is
conducting current, it will exhibit a slight snap-back or
negative resistance characteristic due to its structure.
This must be considered when connecting the device
to a power supply rail. To return to a non-conducting
state, the current through the device must fall below
the snap-back current (approximately < 50mA).
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ã 2000 Semtech Corp.
6
SLVU2.8-4
PROTECTION PRODUCTS
Outline Drawing - SO-8
Land Pattern - SO-8
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ã 2000 Semtech Corp.
7
SLVU2.8-4
PROTECTION PRODUCTS
Ordering Information
Working
Part Number
Qty per Reel
Reel Size
Voltage
SLVU2.8-4.TB
SLVU2.8-4.TE
2.8V
2.8V
500
7 Inch
2,500
13 Inch
Note:
(1) No suffix indicates tube pack.
Contact Information
Semtech Corporation
Protection Products Division
652 Mitchell Rd., Newbury Park, CA 91320
Phone: (805)498-2111 FAX (805)498-3804
www.semtech.com
ã 2000 Semtech Corp.
8
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