SLVU2.8-8.T [SEMTECH]
EPD TVS Diode Array For ESD and Latch-Up Protection; EPD TVS二极管阵列用于ESD和闩锁保护
| 型号： | SLVU2.8-8.T |
| 厂家： | 
SEMTECH CORPORATION |
| 描述： | EPD TVS Diode Array For ESD and Latch-Up Protection |
| 文件： | 总9页 (文件大小：239K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SLVU2.8-8
EPD TVS Diode Array
For ESD and Latch-Up Protection
PROTECTION PRODUCTS
Features
Description
The SLV series of transient voltage suppressors are
designed to protect low voltage, state-of-the-art CMOS
semiconductors from transients caused by electro-
static discharge (ESD), cable discharge events (CDE),
lightning and other induced voltage surges.
600 Watts peak pulse power (tp = 8/20µs)
Transient protection for high speed data lines to
IEC 61000-4-2 (ESD) 15kV (air), 8kV (contact)
IEC 61000-4-4 (EFT) 40A (tp = 5/50ns)
IEC 61000-4-5 (Lightning) 24A (tp = 8/20µs)
Protects four line pairs (eight lines)
Comprehensive pin out for easy board layout
Low capacitance
High peak pulse current (30A, 8/20µs)
Low leakage current
Low operating and clamping voltages
Solid-state EPD TVS process technology
The devices are constructed using Semtech’s propri-
etary EPD process technology. The EPD process pro-
vides low standoff voltages with significant reductions
in leakage currents and capacitance over silicon-
avalanche diode processes. The SLVU2.8-8 features
integrated low capacitance compensation diodes that
reduce the maximum capacitance to 8pF per line.
This, combined with low leakage current, means signal
integrity is preserved in high-speed applications such
as 10/100 Ethernet.
Mechanical Characteristics
JEDEC SO-8 package
The SLVU2.8-8 is in an SO-8 package and may be used
to protect four high-speed line pairs. The layout of the
device minimizes trace inductance and reduces voltage
overshoot associated with ESD events. The low
clamping voltage of the SLVU2.8-8 minimizes the
stress on the protected IC.
Molding compound flammability rating: UL 94V-0
Marking : Part number, date code, logo
Packaging : Tape and Reel per EIA 481
Applications
10/100 Ethernet
WAN/LAN Equipment
Switching Systems
DSLAMs
The SLV series TVS diodes will meet the surge require-
ments of IEC 61000-4-2 (ESD), IEC61000-4-5 (Light-
ning), and ETSI ETS 300 386.
Desktops, Servers, & Notebooks
Instrumentation
Base Stations
Analog Inputs
Circuit Diagram (Each Line)
Schematic & PIN Configuration
SO-8 (Top View)
www.semtech.com
Revision 1/18/2008
1
SLVU2.8-8
PROTECTION PRODUCTS
Absolute Maximum Rating
Rating
Peak Pulse Power (tp = 8/20µs)
Peak Pulse Current (tp = 8/20µs)
Symbol
Ppk
Value
600
30
Units
Watts
A
IPP
ESD Per IEC 61000-4-2 (Air)
ESD Per IEC 61000-4-2 (Contact)
ESD
30
25
kV
Operating Temperature
Storage Temperature
TJ
-55 to +125
-55 to +150
°C
°C
TSTG
Electrical Characteristics (T=25oC)
SLVU2.8-8
Parameter
Reverse Stand-Off Voltage
Punch-Through Voltage
Snap-Back Voltage
Symbol
VRWM
VPT
Conditions
Minimum
Typical
Maximum
Units
2.8
V
V
IPT = 2µA
3.0
2.8
VSB
ISB = 50mA
V
Reverse Leakage Current
IR
VRWM = 2.8V, T=25°C
(Each Line)
.100
1
4.6
15
17
8
µA
Clamping Voltage
Clamping Voltage
Clamping Voltage
Junction Capacitance
VC
VC
VC
Cj
IPP = 1A, tp = 8/20µs
(Each Line)
V
V
IPP = 24A, tp = 8/20µs
(Each Line)
IPP = 30A, tp = 8/20µs
(Each Line)
V
VR = 0V, f = 1MHz
(Each Line)
pF
www.semtech.com
2008 Semtech Corp.
2
SLVU2.8-8
PROTECTION PRODUCTS
Typical Characteristics
Non-Repetitive Peak Pulse Power vs. Pulse Time
Power Derating Curve
110
100
90
80
70
60
50
40
30
20
10
0
10
1
0.1
0.01
0
25
50
75
100
125
150
Ambient Temperature - TA (oC)
0.1
1
10
100
1000
Pulse Duration - tp (µs)
Pulse Waveform
Clamping Voltage vs. Peak Pulse Current
110
100
90
80
70
60
50
40
30
20
10
0
16
12
8
Waveform
Parameters:
µ
tr = 8 s
µ
td = 20 s
e-t
td = IPP/2
Waveform
Parameters:
tr = 8µs
4
td = 20µs
0
0
5
10
15
20
25
30
0
5
10
15
20
25
30
35
Time (µs)
Peak Pulse Current Ipp - (A)
Normalized Capacitance vs. Reverse Voltage
Insertion Loss S21
CH1 S21 LOG
10 dB/
REF 0 dB
1.4
1.2
1
0.8
0.6
0.4
0.2
0
f = 1 MHz
2.5 3
0
0.5
1
1.5
2
Reverse Voltage - VR (V)
.
STOP 3 000 000 000 MHz
START .030 000 MHz
www.semtech.com
2008 Semtech Corp.
3
SLVU2.8-8
PROTECTION PRODUCTS
Applications Information
SLVU2.8-8 Circuit Diagram
Device Connection for Protection of Eight Data Lines
Electronic equipment is susceptible to transient distur-
bances from a variety of sources including: ESD to an
open connector or interface, direct or nearby lightning
strikes to cables and wires, and charged cables “hot
plugged” into I/O ports. The SLVU2.8-8 is designed to
protect sensitive components from damage and latch-
up which may result from such transient events. The
SLVU2.8-8 can be configured to protect four high-
speed line pairs differentially, or four lines to ground
(common mode). The device is connected as follows:
1. Differential Protection of four line pairs:
Line pairs are connected at pins 1 and 2, 3 and 4,
5 and 6, and 7 and 8.
Circuit Board Layout Recommendations for Suppres-
sion of ESD.
Differential Protection of Four Line Pairs
Good circuit board layout is critical for the suppression
of ESD induced transients. The following guidelines are
recommended:
From Connector
z
z
z
z
Place the device near the input terminals or con-
nectors to restrict transient coupling.
Minimize the path length between the TVS and the
protected line.
Minimize all conductive loops including power and
ground loops.
The ESD transient return path to ground should be
kept as short as possible.
Never run critical signals near board edges.
Use ground planes whenever possible.
1
2
8
7
3
4
6
5
z
z
www.semtech.com
2008 Semtech Corp.
4
SLVU2.8-8
PROTECTION PRODUCTS
Typical Applications
One SLVU2.8.8 Protecting Two 10/100 Ethernet Port
www.semtech.com
2008 Semtech Corp.
5
SLVU2.8-8
PROTECTION PRODUCTS
Applications Information (continued)
EPD TVS™ Characteristics
IPP
The SLVU2.8-8 is constructed using Semtech’s propri-
etary EPD technology. The structure of the EPD TVS is
vastly different from the traditional pn-junction devices.
At voltages below 5V, high leakage current and junction
capacitance render conventional avalanche technology
impractical for most applications. However, by utilizing
the EPD technology, the SLVU2.8-8 can effectively
operate at 2.8V while maintaining excellent electrical
characteristics.
ISB
IPT
IR
VBRR
V
RWM
V
SB
V
PT
VC
IBRR
The EPD TVS employs a complex nppn structure in
contrast to the pn structure normally found in tradi-
tional silicon-avalanche TVS diodes. The EPD mecha-
nism is achieved by engineering the center region of
the device such that the reverse biased junction does
not avalanche, but will “punch-through” to a conduct-
ing state. This structure results in a device with supe-
rior dc electrical parameters at low voltages while
maintaining the capability to absorb high transient
currents.
EPD TVS VI Characteristic Curve
The IV characteristic curve of the EPD device is shown
in Figure 1. The device represents a high impedance
to the circuit up to the working voltage (VRWM). During a
transient event, the device will begin to conduct as it is
biased in the reverse direction. When the punch-
through voltage (VPT) is exceeded, the device enters a
low impedance state, diverting the transient current
away from the protected circuit. When the device is
conducting current, it will exhibit a slight “snap-back” or
negative resistance characteristic due to its structure.
This must be considered when connecting the device
to a power supply rail. To return to a non-conducting
state, the current through the device must fall below
the snap-back current (approximately < 50mA).
www.semtech.com
2008 Semtech Corp.
6
SLVU2.8-8
PROTECTION PRODUCTS
Applications Information - SPICE Model
0.8 nH
SLVU2.8-8 Spice Model
SLVU2.8-8 Spice Parameters
Parameter
Unit
Amp
Volt
Volt
Ohm
Amp
Farad
sec
--
D1 (TVS)
6.09E-14
3.4
D2 (LCRD)
8.57E-9
420
IS
BV
VJ
13.8
0.62
RS
IBV
CJO
TT
0.389
10E-3
0.15
10E-3
3.15E-12
2.541E-9
0.113
1.1
24.75E-12
2.541E-9
0.145
M
N
--
1.1
EG
eV
1.11
1.11
www.semtech.com
2008 Semtech Corp.
7
SLVU2.8-8
PROTECTION PRODUCTS
Outline Drawing - SO-8
A
h
D
E
e
DIMENSIONS
INCHES MILLIMETERS
N
h
DIM
A
MIN NOM MAX MIN NOM MAX
H
E/2
2X
-
-
-
-
-
-
-
-
-
-
.053
.069 1.35
.010 0.10
.065 1.25
.020 0.31
.010 0.17
1.75
0.25
1.65
0.51
0.25
A1 .004
A2 .049
E1
c
GAGE
b
c
D
.012
.007
PLANE
1
2
.189 .193 .197 4.80 4.90 5.00
0.25
L
(L1)
E1 .150 .154 .157 3.80 3.90 4.00
ccc
C
01
E
e
.236 BSC
6.00 BSC
2X N/2 TIPS
e/2
.050 BSC
1.27 BSC
-
0.50
-
DETAIL A
h
.010
.020 0.25
B
L
.016 .028 .041 0.40 0.72 1.04
(.041)
(1.04)
L1
N
8
8
D
-
-
01
aaa
bbb
ccc
0°
8°
0°
8°
aaa C
.004
.010
.008
0.10
0.25
0.20
A2
A
SEE DETAIL A
SEATING
PLANE
SIDE VIEW
C
A1
bxN
bbb
C
A-B D
NOTES:
1. CONTROLLING DIMENSIONS ARE IN MILLIMETERS (ANGLES IN DEGREES).
2. DATUMS -A- AND -B- TO BE DETERMINED AT DATUM PLANE -H-
3. DIMENSIONS "E1" AND "D" DO NOT INCLUDE MOLD FLASH, PROTRUSIONS
OR GATE BURRS.
REFERENCE JEDEC STD MS-012, VARIATION AA.
4.
Land Pattern - SO-8
X
DIMENSIONS
DIM
INCHES
MILLIMETERS
(.205)
(5.20)
3.00
1.27
0.60
2.20
7.40
C
G
P
X
Y
Z
.118
.050
.024
.087
.291
(C)
G
Y
Z
P
NOTES:
1.
THIS LAND PATTERN IS FOR REFERENCE PURPOSES ONLY.
CONSULT YOUR MANUFACTURING GROUP TO ENSURE YOUR
COMPANY'S MANUFACTURING GUIDELINES ARE MET.
2.
REFERENCE IPC-SM-782A, RLP NO. 300A.
www.semtech.com
2008 Semtech Corp.
8
SLVU2.8-8
PROTECTION PRODUCTS
Marking
YYWW
SC
SLVU2.8
-8
1
Top View
Note:
(1) yyww = Date Code
Ordering Information
Working
Voltage
Part Number
Qty/Pkg
Reel Size
SLVU2.8-8.TB
SLVU2.8-8.TBT
SLVU2.8-8
2.8V
500/Reel
500/Reel
98/Tube
98/Tube
7 Inch
7 Inch
N/A
(1)
2.8V
2.8V
(1)
SLVU2.8-8.T
2.8V
N/A
Note:
(1) Lead-Free Product
Contact Information
Semtech Corporation
Protection Products Division
200 Flynn Road, Camarillo, CA 93012
Phone: (805)498-2111 FAX (805)498-3804
www.semtech.com
2008 Semtech Corp.
9
相关型号：
SLVU2.8-8.TE
Trans Voltage Suppressor Diode, 600W, 2.8V V(RWM), Bidirectional, 4 Element, Silicon, PLASTIC, SO-8
SEMTECH
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