SM05 [SEMTECH]
TVS Diode Array; TVS二极管阵列型号: | SM05 |
厂家: | SEMTECH CORPORATION |
描述: | TVS Diode Array |
文件: | 总7页 (文件大小:172K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SM05 THRU SM36
TVS Diode Array
PROTECTION PRODUCTS
Features
Description
The SM series of transient voltage suppressors (TVS)
are designed to protect components which are
connected to data and transmission lines from voltage
surges caused by ESD (electrostatic discharge), EFT
(electrical fast transients), and lightning.
u 300 watts peak pulse power (tp = 8/20µs)
u Transient protection for data & power lines to
IEC 61000-4-2 (ESD) 15kV (air), 8kV (contact)
IEC 61000-4-4 (EFT) 40A (tp=5/50ns)
IEC 61000-4-5 (Lightning) 12A (tp=1.2/50µs)
u Protects one bidirectional line or two unidirectional
lines
u Working Voltages: 5V, 12V, 15V, 24 and 36V
u Low clamping voltage
u Solid-state silicon avalanche technology
TVS diodes are characterized by their high surge
capability, low operating and clamping voltages, and
fast response time. This makes them ideal for use as
board level protection of sensitive semiconductor
components. The dual-junction common-anode design
allows the user to protect one bidirectional data line or
two unidirectional lines. The low profile SOT23
package allows flexibility in the design of crowded
circuit boards.
Mechanical Characteristics
u JEDEC SOT23 package
u Molding compound flammability rating: UL 94V-0
u Marking : Marking Code
The SM series will meet the surge requirements of IEC
61000-4-2 (Formerly IEC 801-2), Level 4, Human
Body Model for air and contact discharge.
u Packaging : Tape and Reel per EIA 481
Applications
u Cellular Handsets and Accessories
u Portable Electronics
u Industrial Controls
u Set-Top Box
u Servers, Notebook, and Desktop PC
Circuit Diagram
Schematic & PIN Configuration
SOT23 (Top View)
www.semtech.com
Revision 9/2000
1
SM05 THRU SM36
PROTECTION PRODUCTS
Absolute Maximum Rating
Rating
Symbol
Ppk
Value
300
Units
Watts
°C/W
°C
Peak Pulse Power (tp = 8/20µs)
Thermal Resistance, Junction to Ambient
Lead Soldering Temperature
Operating Temperature
qJA
556
TL
260 (10 sec.)
-55 to +125
-55 to +150
TJ
°C
Storage Temperature
TSTG
°C
Electrical Characteristics
SM05
Parameter
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage
Symbol
Conditions
Minimum
Typical
Maximum
Units
VRWM
VBR
IR
5
V
V
It = 1mA
6
VRWM = 5V, T=25°C
20
µA
V
VC
IPP = 1A,
9.8
tp = 8/20µs
Maximum Peak Pulse Current
Junction Capacitance
Ipp
Cj
tp = 8/20µs
17
A
Pin 1 to 2
350
pF
VR = 0V, f = 1MHz
Junction Capacitance
Cj
Pin 1 to 3 and
Pin 2 to 3
400
pF
VR = 0V, f = 1MHz
SM12
Parameter
Symbol
VRWM
VBR
Conditions
Minimum
Typical
Maximum
Units
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage
12
V
V
It = 1mA
13.3
IR
VRWM = 12V, T=25°C
1
µA
V
VC
IPP = 1A,
19
tp = 8/20µs
Maximum Peak Pulse Current
Junction Capacitance
Ipp
Cj
tp = 8/20µs
12
A
Pin 1 to 2
120
pF
VR = 0V, f = 1MHz
Junction Capacitance
Cj
Pin 1 to 3 and
Pin 2 to 3
150
pF
VR = 0V, f = 1MHz
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ã 2000 Semtech Corp.
2
SM05 THRU SM36
PROTECTION PRODUCTS
Electrical Characteristics (Continued)
SM15
Parameter
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage
Symbol
VRWM
VBR
IR
Conditions
Minimum
Typical
Maximum
Units
V
15
It = 1mA
16.7
V
VRWM = 15V, T=25°C
IPP = 1A, tp = 8/20µs
tp = 8/20µs
1
µA
V
VC
24
10
75
Maximum Peak Pulse Current
Junction Capacitance
Ipp
A
Cj
Pin 1 to 2
pF
VR = 0V, f = 1MHz
Junction Capacitance
Cj
Pin 1 to 3 and 2 to 3
VR = 0V, f = 1MHz
100
pF
SM24
Parameter
Symbol
VRWM
VBR
IR
Conditions
Minimum
Typical
Maximum
Units
V
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage
24
It = 1mA
26.7
V
VRWM = 24V, T=25°C
IPP = 1A, tp = 8/20µs
tp = 8/20µs
1
43
5
µA
V
VC
Maximum Peak Pulse Current
Junction Capacitance
Ipp
A
Cj
Pin 1 to 2
50
pF
VR = 0V, f = 1MHz
Junction Capacitance
Cj
Pin 1 to 3 and 2 to 3
VR = 0V, f = 1MHz
60
pF
SM36
Parameter
Symbol
VRWM
VBR
IR
Conditions
Minimum
Typical
Maximum
Units
V
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage
36
It = 1mA
40
V
VRWM = 36V, T=25°C
IPP = 1A, tp = 8/20µs
tp = 8/20µs
1
60
4
µA
V
VC
Maximum Peak Pulse Current
Junction Capacitance
Ipp
A
Cj
Pin 1 to 2
40
pF
VR = 0V, f = 1MHz
Junction Capacitance
Cj
Pin 1 to 3 and 2 to 3
VR = 0V, f = 1MHz
45
pF
www.semtech.com
ã 2000 Semtech Corp.
3
SM05 THRU SM36
PROTECTION PRODUCTS
Typical Characteristics
Non-Repetitive Peak Pulse Power vs. Pulse Time
Power Derating Curve
10
110
100
90
80
70
60
50
40
30
20
10
0
1
0.1
0.01
0
25
50
75
100
125
150
Ambient Temperature - TA (oC)
0.1
1
10
100
1000
Pulse Duration - tp (µs)
Pulse Waveform
110
Waveform
Parameters:
tr = 8µs
td = 20µs
100
90
80
70
60
50
40
30
20
10
0
e-t
td = IPP/2
0
5
10
15
20
25
30
Time (µs)
ESD Pulse Waveform (Per IEC 61000-4-2)
IEC 61000-4-2 Discharge Parameters
Level
First
Peak
Peak
Test
Test
Peak
Current
Current
Voltage
(Contact
Voltage
(Air
Current at 30 ns at 60 ns
Discharge) Discharge)
(A)
7.5
(A)
4
(A)
8
(kV)
(kV)
1
2
3
4
2
2
15
22.5
30
8
4
6
8
4
6
8
4
8
12
16
15
www.semtech.com
ã 2000 Semtech Corp.
4
SM05 THRU SM36
PROTECTION PRODUCTS
Applications Information
Device Connection Options
Device Schematic & Pin Configuration
The SM series is designed to protect one bidirectional
or two unidirectional data or I/O lines operating at 5 to
36 volts. Connection options are as follows:
l
Bidirectional: Pin 1 is connected to the data line
and pin 2 is connected to ground (Since the device
is symmetrical, these connections may be re-
versed). For best results, the ground connection
should be made directly to a ground plane on the
board. The path length should be kept as short as
possible to minimize parasitic inductance. Pin 3 is
not connected.
l
Unidirectional: Data lines are connected to pin 1
and pin 2. Pin 3 is connected to ground. For best
results, this pin should be connected directly to a
ground plane on the board. The path length should
be kept as short as possible to minimize parasitic
inductance.
RS-232 Transceiver Protection Example
Circuit Board Layout Recommendations for Suppres-
sion of ESD.
Good circuit board layout is critical for the suppression
of fast rise-time transients such as ESD. The following
guidelines are recommended (Refer to application note
SI99-01 for more detailed information):
l
l
l
l
Place the TVS near the input terminals or connec-
tors to restrict transient coupling.
Minimize the path length between the TVS and the
protected line.
Minimize all conductive loops including power and
ground loops.
The ESD transient return path to ground should be
kept as short as possible.
l
l
Never run critical signals near board edges.
Use ground planes whenever possible.
www.semtech.com
ã 2000 Semtech Corp.
5
SM05 THRU SM36
PROTECTION PRODUCTS
Outline Drawing - SOT23
Land Pattern - SOT23
Note 1 : Grid placement courtyard is 8 x 8 elements (4mm x 4mm) in accordance with the international grid detailed in IEC
Publication 97.
www.semtech.com
ã 2000 Semtech Corp.
6
SM05 THRU SM36
PROTECTION PRODUCTS
Marking Codes
Marking
Part Number
Code
SM05
SM12
SM15
SM24
SM36
M05
M12
M15
M24
M36
Ordering Information
Working
Part Number
Qty per Reel
Reel Size
Voltage
SM05.TC
SM05.TG
SM12.TC
SM12.TG
SM15.TC
SM15.TG
SM24.TC
SM24.TG
SM36.TC
5V
3,000
10,000
3,000
10,000
3,000
10,000
3,000
10,000
3,000
7 Inch
13 Inch
7 Inch
5V
12V
12V
15V
15V
24V
24V
36V
13 Inch
7 Inch
13 Inch
7 Inch
13 Inch
7 Inch
Contact Information
Semtech Corporation
Protection Products Division
652 Mitchell Rd., Newbury Park, CA 91320
Phone: (805)498-2111 FAX (805)498-3804
www.semtech.com
ã 2000 Semtech Corp.
7
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