ST-2SA952 [SEMTECH]
PNP Silicon Epitaxial Planar Transistor; PNP硅外延平面晶体管
| 型号： | ST-2SA952 |
| 厂家： | 
SEMTECH CORPORATION |
| 描述： | PNP Silicon Epitaxial Planar Transistor |
| 文件： | 总2页 (文件大小：215K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ST 2SA952
PNP Silicon Epitaxial Planar Transistor
for switching and AF amplifier applications.
The transistor is subdivided into three group, M, L
and K according to its DC current gain.
On special request, these transistors can be
manufactured in different pin configurations.
1. Emitter 2. Collector 3. Base
TO-92 Plastic Package
O
Absolute Maximum Ratings (Ta = 25 C)
Parameter
Symbol
Value
Unit
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
-VCBO
-VCEO
-VEBO
-IC
30
V
V
25
5
700
V
mA
mA
mW
Base Current
-IB
150
Power Dissipation
Ptot
600
O
Junction Temperature
Storage Temperature Range
Tj
150
C
O
C
TS
- 55 to + 150
O
Characteristics at Ta = 25 C
Parameter
Symbol
Min.
Max.
Unit
DC Current Gain
at -VCE = 1 V, -IC = 100 mA
Current Gain Group M
hFE
hFE
hFE
hFE
90
135
200
50
180
270
400
-
-
-
-
-
L
K
at -VCE = 1 V, -IC = 700 mA
Collector Base Cutoff Current
at -VCB = 30 V
-ICBO
-IEBO
-VCE(sat)
-VBE(sat)
-VBE
-
-
100
100
0.6
1.2
0.7
-
nA
nA
V
Emitter Base Cutoff Current
at -VEB = 5 V
Collector Emitter Saturation Voltage
at -IC = 700 mA, -IB = 70 mA
-
Base Emitter Saturation Voltage
at -IC = 700 mA, -IB = 70 mA
-
V
Base Emitter Voltage
at -VCE = 6 V, -IC = 10 mA
0.6
50
-
V
Gain Bandwidth Product
at -VCE = 6 V, -IE = 10 mA
fT
MHz
pF
Collector to Base Capacitance
at -VCB = 6 V, f = 1 MHz
40
COB
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 24/05/2008
ST 2SA952
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 24/05/2008
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