ST13001 [SEMTECH]
NPN Silicon Epitaxial Planar Transistor; NPN硅外延平面晶体管
| 型号： | ST13001 |
| 厂家： | 
SEMTECH CORPORATION |
| 描述： | NPN Silicon Epitaxial Planar Transistor |
| 文件： | 总2页 (文件大小：162K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ST 13001
NPN Silicon Epitaxial Planar Transistor
for high voltage and high speed switching applications
1. Emitter 2. Collector 3. Base
TO-92 Plastic Package
Weight approx. 0.19g
O
Absolute Maximum Ratings (Ta = 25 C)
Parameter
Symbol
Value
Unit
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
VCBO
VCEO
VEBO
500
400
9
V
V
V
Collector Current (DC)
Total Power Dissipation
Junction Temperature
Storage Temperature Range
IC
0.3
A
Ptot
0.75
W
O
C
Tj
150
O
C
TS
- 55 to + 150
O
Characteristics at Ta = 25 C
Parameter
Symbol
Min.
Max.
Unit
DC Current Gain
at VCE = 10 V, IC = 0.25 mA
at VCE = 20 V, IC = 20 mA
hFE
hFE
5
10
-
40
-
-
Collector Base Cutoff Current
at VCB = 500 V
Collector Emitter Cutoff Current
at VCE = 400 V
Emitter Base Cutoff Current
at VEB = 9 V
Collector Base Breakdown Voltage
at IC = 100 µA
Collector Emitter Breakdown Voltage
at IC = 1 mA
Emitter Base Breakdown Voltage
at IE = 100 µA
Collector Emitter Saturation Voltage
at IC = 50 mA, IB = 10 mA
Base Emitter Saturation Voltage
at IC = 50 mA, IB = 10 mA
ICBO
ICEO
-
100
200
100
-
µA
µA
µA
V
-
IEBO
-
V(BR)CBO
V(BR)CEO
V(BR)EBO
VCE(sat)
VBE(sat)
fT
500
400
-
V
9
-
-
V
0.5
1.2
-
V
-
V
Transition Frequency
at VCE = 20 V, IC = 20 mA, f = 1 MHz
Fall Time
at IC = 50 mA, IB = -IB2 = 5 mA, VCC = 45 V
Storage Time
at IC = 50 mA, IB = -IB2 = 5 mA, VCC = 45 V
8
-
MHz
µs
µs
tf
0.3
1.5
ts
-
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 29/08/2008
ST 13001
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 29/08/2008
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