ST2N6517 [SEMTECH]

NPN Silicon Epitaxial Planar Transistor; NPN硅外延平面晶体管
ST2N6517
型号: ST2N6517
厂家: SEMTECH CORPORATION    SEMTECH CORPORATION
描述:

NPN Silicon Epitaxial Planar Transistor
NPN硅外延平面晶体管

晶体 晶体管
文件: 总2页 (文件大小:130K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
ST 2N6517  
NPN Silicon Epitaxial Planar Transistor  
for switching and AF amplifier applications.  
On special request, these transistors can be  
manufactured in different pin configurations.  
TO-92 Plastic Package  
Weight approx. 0.19g  
Absolute Maximum Ratings (Ta = 25 oC)  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Value  
Unit  
V
Collector Base Voltage  
Collector Emitter Voltage  
Emitter Base Voltage  
Collector Current  
350  
350  
V
6
V
500  
mA  
mW  
OC  
OC  
Power Dissipation  
Ptot  
625  
Junction Temperature  
Storage Temperature Range  
Tj  
150  
TS  
-55 to +150  
SEMTECH ELECTRONICS LTD.  
(Subsidiary of Sino-Tech International Holdings Limited, a company  
listed on the Hong Kong Stock Exchange, Stock Code: 724)  
®
Dated : 07/12/2002  
ST 2N6517  
Characteristics at Tamb=25 oC  
Symbol  
Min.  
Typ.  
Max.  
Unit  
DC Current Gain  
hFE  
hFE  
hFE  
hFE  
hFE  
20  
30  
30  
20  
15  
-
-
-
-
-
-
-
-
-
-
-
-
at VCE=10V, IC=1mA  
at VCE=10V, IC=10mA  
at VCE=10V, IC=30mA  
at VCE=10V, IC=50mA  
at VCE=10V, IC=100mA  
Collector Base Breakdown Voltage  
at IC=100μA  
200  
200  
-
BVCBO  
BVCEO  
BVEBO  
ICBO  
350  
-
-
-
-
-
-
-
-
V
V
Collector Emitter Breakdown Voltage  
at IC=1mA  
350  
Emitter Base Breakdown Voltage  
at IE=10μA  
6
-
-
V
Collector Cutoff Current  
at VCB=250V  
50  
50  
6
nA  
nA  
pF  
Emitter Cutoff Current  
at VEB=5V  
IEBO  
-
Collector Base Capacitance  
at VCB=20V, f=1MHz  
Ccb  
-
Base Emitter Saturation Voltage  
at IC=10mA, IB=1mA  
VBE(sat)  
VBE(sat)  
VBE(sat)  
-
-
-
-
-
-
0.75  
0.85  
0.9  
V
V
V
at IC=20mA, IB=2mA  
at IC=30mA, IB=3mA  
Collector Emitter Saturation Voltage  
at IC=10mA, IB=1mA  
VCE(sat)  
VCE(sat)  
VCE(sat)  
VCE(sat)  
-
-
-
-
-
-
-
-
0.3  
0.35  
0.5  
1
V
V
V
V
at IC=20mA, IB=2mA  
at IC=30mA, IB=3mA  
at IC=50mA, IB=5mA  
Base Emitter On Voltage  
at VCE=10V, IC=100mA  
Current Gain Bandwidth Product  
at VCE=20V, IC=10mA, f=20MHz  
VBE(on)  
-
-
-
2
V
fT  
40  
200  
MHz  
SEMTECH ELECTRONICS LTD.  
(Subsidiary of Sino-Tech International Holdings Limited, a company  
listed on the Hong Kong Stock Exchange, Stock Code: 724)  
®
Dated : 07/12/2002  

相关型号:

ST2N6520

PNP Silicon Epitaxial Planar Transistor
SEMTECH

ST2N7000

Small Signal MOSFET
SEMTECH

ST2R503B

Power Thermistors Inrush Current Limiting Power Thermistor
LITTELFUSE

ST2R507B

Power Thermistors Inrush Current Limiting Power Thermistor
LITTELFUSE

ST2R509B

Power Thermistors Inrush Current Limiting Power Thermistor
LITTELFUSE

ST2R510B

Power Thermistors Inrush Current Limiting Power Thermistor
LITTELFUSE

ST2R515B

Power Thermistors Inrush Current Limiting Power Thermistor
LITTELFUSE

ST2R5BG1SPGF

Amplified output whicheliminates the cost of external amplifiers
HONEYWELL

ST2R5BG6SPGF

PRES TRANSDUCER 2.5 BAR
ETC

ST2R5BG6SPRF

PRES TRANSDUCER 2.5 BAR
ETC

ST2R5PG1SPGF

Stainless Steel Pressure Sensors
HONEYWELL

ST2S008V1A

PCB Connector
JAE