ST9012 [SEMTECH]
PNP Silicon Epitaxial Planar Transistor; PNP硅外延平面晶体管
| 型号： | ST9012 |
| 厂家： | 
SEMTECH CORPORATION |
| 描述： | PNP Silicon Epitaxial Planar Transistor |
| 文件： | 总2页 (文件大小：248K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ST 9012
PNP Silicon Epitaxial Planar Transistor
for switching and amplifier applications. Especially
suitable for AF-driver stages and low power output
stages.
The transistor is subdivided into three groups, G,
H and I, according to its DC current gain. As
complementary type the NPN transistor 9013 is
recommended.
1. Emitter 2. Base 3. Collector
TO-92 Plastic Package
O
Absolute Maximum Ratings (Ta = 25 C)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Symbol
-VCBO
-VCEO
-VEBO
-IC
Value
Unit
40
V
V
30
5
500
V
Collector Current
mA
mW
Power Dissipation
Ptot
625
O
Junction Temperature
Storage Temperature Range
Tj
150
C
O
C
Tstg
- 55 to + 150
O
Characteristics at Ta = 25 C
Parameter
Symbol
Min.
Max.
Unit
DC Current Gain
at -VCE = 1 V, -IC = 50 mA
Current Gain Group G
hFE
hFE
hFE
hFE
110
177
250
40
183
250
380
-
-
-
-
-
H
I
at -VCE = 1 V, -IC = 500 mA
Collector Base Cutoff Current
at -VCB = 35 V
Emitter Base Cutoff Current
at -VEB = 5 V
Collector Base Breakdown Voltage
at -IC = 100 μA
Collector Emitter Breakdown Voltage
at -IC = 1 mA
-ICBO
-IEBO
-
-
100
nA
nA
V
100
-V(BR)CBO
-V(BR)CEO
-V(BR)EBO
-VCE(sat)
-VBE(sat)
-VBE
40
30
5
-
-
V
Emitter Base Breakdown Voltage
at -IE = 100 μA
-
V
Collector Emitter Saturation Voltage
at -IC = 500 mA, -IB = 50 mA
Base Emitter Saturation Voltage
at -IC = 500 mA, -IB = 50 mA
Base Emitter Voltage
at -VCE = 1 V, -IC = 100 mA
Gain Bandwidth Product
at -VCE = 6 V, -IC = 20 mA
-
0.6
1.2
1
V
-
V
-
V
fT
100
-
MHz
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 19/03/2009
ST 9012
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 19/03/2009
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