ST9016 [SEMTECH]
NPN Silicon Epitaxial Planar Transistor; NPN硅外延平面晶体管
| 型号： | ST9016 |
| 厂家： | 
SEMTECH CORPORATION |
| 描述： | NPN Silicon Epitaxial Planar Transistor |
| 文件： | 总2页 (文件大小：146K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ST 9016
NPN Silicon Epitaxial Planar Transistor
for switching and AF amplifier applications.
The transistor is subdivided into six groups, D, E, F,
G, H and I, according to its DC current gain.
On special request, these transistors can be
manufactured in different pin configurations.
TO-92 Plastic Package
Weight approx. 0.19g
Absolute Maximum Ratings (Ta = 25℃)
Symbol
VCBO
VCEO
VEBO
IC
Value
Unit
V
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
30
20
V
4
25
V
mA
mW
OC
OC
Power Dissipation
Ptot
400
Junction Temperature
Storage Temperature Range
Tj
150
TS
-65 to +150
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 07/12/2002
ST 9016
Characteristics at Tamb=25 OC
Symbol
Min.
Typ.
Max.
Unit
DC Current Gain
at VCE=5V, IC=1mA
D
E
F
G
H
I
hFE
hFE
hFE
hFE
hFE
hFE
28
39
-
-
-
-
-
-
45
60
-
-
-
-
-
-
Current Gain Group
54
80
72
108
146
198
97
132
Collector Base Breakdown Voltage
at IC=100μA
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
30
-
-
-
-
V
V
Collector Emitter Breakdown Voltage
at IC=1mA
20
Emitter Base Breakdown Voltage
at IE=100μA
4
-
-
V
Collector Cutoff Current
at VCB=30V
-
-
100
100
0.3
-
nA
nA
V
Emitter Cutoff Current
at VEB=3V
IEBO
-
-
Collector Emitter Saturation Voltage
at IC=10mA, IB=1mA
Base Emitter on Voltage
at VCE=5V, IC=1mA
VCE(sat)
VBE(on)
CCBO
-
0.1
0.72
1.2
620
-
-
V
Collector Base Capacitance
at VCB=10V, f=1MHz
Gain Bandwidth Product
at VCE=5V, IC=1mA
1.6
-
pF
MHz
fT
400
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 07/12/2002
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