ZM-PTZ3V6B [SEMTECH]
SILICON EPITAXIAL PLANAR ZENER DIODES; 硅外延平面齐纳二极管
| 型号： | ZM-PTZ3V6B |
| 厂家： | 
SEMTECH CORPORATION |
| 描述： | SILICON EPITAXIAL PLANAR ZENER DIODES |
| 文件： | 总2页 (文件大小：180K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ZM-PTZ3V6B ~ ZM-PTZ36B
SILICON EPITAXIAL PLANAR ZENER DIODES
LL-41
Features
• Small surface mounting type
• 1 W of power can be obtained despite compact size
• High surge withstand level
Applications
• Voltage regulation and voltage limiting
• Voltage surge absorption
O
Absolute Maximum Ratings (Ta = 25 C)
Parameter
Power Dissipation 1)
Symbol
Ptot
Value
Unit
W
1
O
C
Junction Temperature
Tj
150
O
C
Storage Temperature Range
TS
- 55 to + 150
1) Mounting density of other power components should be taken into consideration when laying out the pattern.
Zener Voltage Range
Operating Resistance
Reverse current
IR (uA)
Type
Vz (V)
Max.
4
4.4
4.8
Zz (Ω)
Min.
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13.3
14.7
16.2
18
IZ (mA)
40
40
40
40
40
40
40
40
40
40
40
40
20
20
20
20
20
20
20
10
10
10
10
10
10
Max.
15
15
15
10
8
8
6
6
IZ (mA)
40
40
40
40
40
40
40
40
40
40
40
40
20
20
20
20
20
20
20
10
10
10
10
10
10
Max.
20
20
20
20
20
20
20
20
20
20
20
10
10
10
10
10
10
10
10
10
10
10
10
10
10
VR (V)
1
ZM-PTZ3V6B
ZM-PTZ3V9B
ZM-PTZ4V3B
ZM-PTZ4V7B
ZM-PTZ5V1B
ZM-PTZ5V6B
ZM-PTZ6V2B
ZM-PTZ6V8B
ZM-PTZ7V5B
ZM-PTZ8V2B
ZM-PTZ9V1B
ZM-PTZ10B
ZM-PTZ11B
ZM-PTZ12B
ZM-PTZ13B
ZM-PTZ15B
ZM-PTZ16B
ZM-PTZ18B
ZM-PTZ20B
ZM-PTZ22B
ZM-PTZ24B
ZM-PTZ27B
ZM-PTZ30B
ZM-PTZ33B
ZM-PTZ36B
1
1
5.2
1
5.7
6.3
7
7.7
1
1.5
3
3.5
4
8.4
9.3
4
4
6
6
8
8
10
10
12
12
14
14
16
16
18
18
20
5
6
7
8
10.2
11.2
12.3
13.5
15
16.5
18.3
20.3
22.4
24.5
27.6
30.8
34
9
10
11
12
13
15
17
19
21
23
25
27
20
22
24
27
30
33
36
37
40
1) Tested with pulses tp = 20 ms.
2) The operating resistances (ZZ, ZZK) are measured by superimposing a minute alternating current on the regulated current
(Iz).
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 07/05/2006
ZM-PTZ3V6B ~ ZM-PTZ36B
Derating curve
Rise in surface temperature
Rise in surface temperature
1200
200
200
100
0
ALUMINA SUBSTRATE
114X124X1.6(mm)
Glass epoxy substrate
32x30x1.6(mm)
1.5W
1.5W
1W
Ceramic substrate
82x30x1.0(mm)
800
400
100
0.5W
1W
Individual part
(not mounted)
0.5W
10
GLASS EPOXY SUBSTRATE
144X220X1.6(mm)
0
0
50
87.5 100
150
200
1
100
1
10
100
Mounting quantity(pcs/substrate)
Mounting quantity(pcs/substrate)
Ta ( C)
Zener voltage characteristics
Zener voltage - temp.
coefficient characteristics
100m
10m
0.10
0.08
10
8.2 9.1
6.8 7.5
6.2
5.6
4.7
5.1
4.3
3.9
16
15
12
20
11
30
Iz=20mA
Iz=40mA
27
36
24
18
22
33
13
3.6
0.04
0
1m
100
10
-0.04
-0.08
125-25
C
1
0
0
5
10
20
30
40
10
20
30
35
40
25
15
Zener voltage (V)
Zener voltage (V)
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 07/05/2006
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