20SQ040 [SENO]

20A SCHOTTKY BARRIER DIODE;
20SQ040
型号: 20SQ040
厂家: Zibo Seno Electronic Engineering Co.,Ltd    Zibo Seno Electronic Engineering Co.,Ltd
描述:

20A SCHOTTKY BARRIER DIODE

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Zibo Seno Electronic Engineering Co., Ltd.  
20SQ030-20SQ100  
20A SCHOTTKY BARRIER DIODE  
FEATURES  
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Diffused Junction  
Low Forward Voltage Drop  
High Current Capability  
High Reliability  
A
A
B
High Surge Current Capability  
C
D
Mechanical Data  
R-6/P-600  
!
!
Case: R-6/P-600, Molded Plastic  
Terminals: Plated Leads Solderable per  
MIL-STD-202, Method 208  
Polarity: Cathode Band  
Weight: 2.1 grams (approx.)  
Mounting Position: Any  
Dim  
A
Min  
Max  
25.4  
8.60  
1.20  
8.60  
B
9.10  
1.30  
9.10  
C
!
!
!
!
!
D
All Dimensions in mm  
Marking: Type Number  
Lead Free: For RoHS / Lead Free Version  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating at 25ambient temperature unless otherwise specified.  
Single phase, half wave ,60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
SYMBOL 20SQ030 20SQ035 20SQ040 20SQ045 20SQ050 20SQ060 20SQ080 20SQ100  
UNIT  
CHARACTERISTICS  
Maximum Recurrent Peak Reverse Voltage  
VRRM  
VRMS  
VDC  
30  
21  
30  
35  
24.5  
35  
40  
28  
40  
45  
31.5  
45  
50  
35  
50  
60  
42  
60  
80  
56  
80  
100  
70  
V
V
V
Maximum RMS Voltage  
Maximum DC Blocking Voltage  
100  
Maximum Average Forward  
Rectified Current@Tc=95 ℃  
20  
I(AV)  
IFSM  
A
A
Peak Forward Surage Current 8.3ms single half  
sine-wave super imposed on rated load(JEDEC  
Method)  
275  
0.55  
0.70  
0.95  
Peak Forward Voltage at 20A DC(Note1)  
Maximum DC Reverse Current @Tj=25℃  
at Rated DC Bolcking Voltage @Tj=100℃  
Tyical Junction Capacitance (Note2)  
Tyical Thermal Resistance (Note3)  
Operating Temperature Range  
VF  
IR  
V
0.5  
50  
mA  
450  
3.0  
CJ  
R J  
TJ  
PF  
/w  
-55 to+200  
-55 to+200  
Storage Temperature Range  
TSTG  
NOTES:1.300us Pulse Width, 2%Dudy Cycle.  
2.Measured at 1.0 MHZ and applied reverse voltage of 4.0VDC.  
3.Thermal Resistance Junction to Case.  
www.senocn.com  
20SQ030 - 20SQ100  
1 of 2  
Zibo Seno Electronic Engineering Co., Ltd.  
20SQ030-20SQ100  
FIG.2-MAXIMUM NON-REPETITVE SURGE  
FIG.1-FORWARD CURRENT DERATING CURVE  
30  
20  
360  
300  
240  
180  
120  
60  
10  
0
8.3Single Half-Sine-Wave  
(JEDEC METOD)  
0
1
2
5
10  
20  
50  
100  
50  
75  
100  
125  
150  
175  
200  
NUMBER OF CYCLES AT 60Hz  
CASE TEMPERATURE  
FIG.4-TYPICAL FORWARD CHARACTERISTICS  
20SQ030 to 20SQ045  
FIG.3-TYPICAL REVERSE CHARACTERISTICS  
100  
100  
10  
10  
TJ=100℃  
20SQ050 to20SQ060  
20SQ080 to20SQ100  
1
TJ=50℃  
TJ=25℃  
0.1  
1
TJ=25℃  
PULSE WIDTH 300US  
2%DUTY CYCLE  
0.01  
0.1  
0
20  
50  
75  
100  
125  
150  
175  
0.2 0.3 0.4 0.5 0.6  
0.7 0.8 0.9 1.0 1.2  
PERCENT OF RATED PEAK REVERSE VOLTAGE(%)  
INSTANTANEOUS FORWARD VOLTAGE  
FIG.5-TYPICAL JUNCTION CAPACITANCE  
1000  
100  
TJ=25℃ ,f=1MHZ  
10  
0.1  
1
4
10  
100  
REVERSE VOLTAGE VOLTS  
www.senocn.com  
20SQ030 - 20SQ100  
2 of 2  

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