BYG50M [SENO]

1.0A SURFACE MOUNT RECTIFIER;
BYG50M
型号: BYG50M
厂家: Zibo Seno Electronic Engineering Co.,Ltd    Zibo Seno Electronic Engineering Co.,Ltd
描述:

1.0A SURFACE MOUNT RECTIFIER

二极管
文件: 总2页 (文件大小:145K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Zibo Seno Electronic Engineering Co., Ltd.  
BY G50A-BY G50M  
1.0A SURFACE MOUNT RECTIFIER  
Features  
!
Ideally Suited for Automatic Assembly  
Low Forward Voltage Drop  
Surge Overload Rating to 30A Peak  
Low Power Loss  
Built-in Strain Relief  
Plastic Case Material has UL Flammability  
Classification Rating 94V-O  
B
!
!
!
!
!
D
A
F
C
H
G
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ E  
SMA/DO-214AC  
Mechanical Data  
Dim  
A
Min  
2.50  
4.00  
1.40  
0.152  
4.80  
2.00  
0.051  
0.76  
Max  
2.90  
4.60  
1.60  
0.305  
5.28  
2.44  
0.203  
1.52  
!
!
Case: Molded Plastic  
Terminals: Solder Plated, Solderable  
per MIL-STD-750, Method 2026  
Polarity: Cathode Band or Cathode Notch  
Marking: Type Number  
B
C
!
!
!
!
D
E
Weight: 0.064 grams (approx.)  
F
Lead Free: For RoHS / Lead Free Version  
G
H
All Dimensions in mm  
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
BY G  
50A  
BY G  
50B  
BY G  
50D  
BY G  
50G  
BY G  
50J  
BY G  
50K  
BY G  
50M  
Unit  
Characteristic  
Symbo  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
50  
35  
100  
70  
200  
140  
400  
600  
420  
800  
560  
1000  
700  
V
V
RMS Reverse Voltage  
VR(RMS)  
IO  
280  
1.0  
Average Rectified Output Current @TL = 60° C  
A
Non-Repetitive Peak Forward Surge Current  
8.3ms Single half sine-wave superimposed on  
rated load (JEDEC Method)  
IFSM  
30  
A
Forward Voltage  
@IF = 1.0A  
VFM  
IRM  
Cj  
1.10  
V
Peak Reverse Current  
At Rated DC Blocking Voltage  
@TA = 25°C  
@TA = 125°C  
5.0  
200  
µA  
pF  
Typical Junction Capacitance (Note 1)  
Typical Thermal Resistance (Note 2)  
Operating and Storage Temperature Range  
15  
30  
JL  
Rꢀ  
K
/W  
Tj, TSTG  
-55 to +150  
°C  
Note:  
1. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.  
2. Mounted on P.C. Board with 8.0mm2 land area.  
www.senocn.com  
BY G50A-BY G50M  
1 of 2  
Alldatasheet  
Zibo Seno Electronic Engineering Co., Ltd.  
BY G50A-BY G50M  
1.0  
0.8  
10  
1.0  
0.6  
0.4  
0.1  
0.2  
0
Tj = 25ºC  
PULSE WIDTH = 300µs  
2% DUTY CYCLE  
Resistive or  
inductive load  
0.01  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
40  
60  
80 100  
120  
140  
160 180  
( ° C )  
VF, INSTANTANEOUS FORWARD VOLTAGE (V)  
Fig. 2 Typical Forward Characteristics  
TL, LEAD TEMPERATURE  
Fig. 1 Forward Current Derating Curve  
30  
1000  
100  
8.3ms Single half sine-wave  
JEDEC Method  
25  
Tj = 125°C  
20  
15  
10  
1.0  
Tj = 25°C  
10  
5
0.1  
0.01  
1
100  
10  
0
40  
120  
80  
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)  
Fig. 4 Typical Reverse Characteristics  
NUMBER OF CYCLES @ 60Hz  
Fig. 3 Max Non-Repetitive Peak Fwd Surge Current  
BY G50A-BY G50M  
www.senocn.com  
2 of 2  
Alldatasheet  

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