KBJ35G [SENO]

3 5A GLASS PASSIVATED BRIDGE RECTIFIER;


型号：	KBJ35G
厂家：	Zibo Seno Electronic Engineering Co.,Ltd
描述：	3 5A GLASS PASSIVATED BRIDGE RECTIFIER
文件：	总2页 (文件大小：176K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Zibo Seno Electronic Engineering Co., Ltd.

KBJ35A - KBJ35M

35A GLASS PASSIVATED BRIDGE RECTIFIER

Features

Glass Passivated Die Construction

High Case Dielectric Strength of 1500V

KBJ4

Min

RMS

Low Reverse Leakage Current

Dim

Max

25.20

15.30

Surge Overload Rating to 350A Peak

Ideal for Printed Circuit Board Applications

24.80

14.70

Plastic Material - UL Flammability

Classification 94V-0

4.00 Nominal

17.20

0.90

7.30

17.80

1.10

7.70

Lead Free::For RoHS / Lead Free Version

Mechanical Data

3.10 Æ 3.40 Æ

Case: Molded Plastic

3.30

1.50

9.30

2.50

3.40

4.40

0.60

3.70

1.90

9.70

2.90

3.80

4.80

0.80

Terminals: Plated Leads, Solderable per

MIL-STD-202, Method 208

Polarity: Molded on Body

Mounting: Through Hole for #6 Screw

Mounting Torque: 5.0 in-lbs Maximum

Weight: 6.6 grams (approx)

Marking: Type Number

All Dimensions in mm

@ T_A= 25°C unless otherwise specified

Maximum Ratings and Electrical Characteristics

Single phase, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

KBJ

35A

KBJ

35B

KBJ

35D

KBJ

35G

KBJ

35J

KBJ

35K

KBJ

35M

Characteristic

Symbol

Unit

V_RRM

V_RWM

V_R

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

100

200

140

400

600

420

800

560

1000

700

V_R(RMS)

RMS Reverse Voltage

280

Average Forward Rectified Output Current @ T_C= 110°C

I_O

Non-Repetitive Peak Forward Surge Current, 8.3 ms single

half-sine-wave superimposed on rated load

I_FSM

V_FM

I_R

350

Forward Voltage per element

@ I_F= 17.5A

1.05

Peak Reverse Current

at Rated DC Blocking Voltage

@ T_A= 25°C

@ T_C= 125°C

2.0

500

µA

I²t Rating for Fusing (t < 8.3 ms) (Note 1)

I²t

C_T

240

A²s

Typical Total Capacitance per Element (Note 2)

Typical Thermal Resistance Junction to Case (Note 3)

Operating and Storage Temperature Range

R_qJC

T_j, T_STG

0.8

°C/W

°C

-55 to +150

Notes: 1. Non-repetitive, for t > 1ms and < 8.3 ms.

2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.

3. Unit mounted on 300 x 300 x 1.6mm Cu plate heat sink.

4. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see EU Directive Annex Notes 5 and 7.

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KBJ35A - KBJ35M

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Zibo Seno Electronic Engineering Co., Ltd.

KBJ35A - KBJ35M

100

Mounted on a

229 x 152 x 127 mm

AL finned plate

1.0

0.1

T_j= 25°C

Resistive or

Inductive load

0.01

100

125

150

0.4

0.8

1.2

1.6

2.0

T_C, CASE TEMPERATURE (°C)

Fig. 1 Forward. Current Derating Curve

V_F, INSTANTANEOUS FORWARD VOLTAGE (V)

Fig. 2 Typical Forward Characteristics (per element)

T_j= 25°C

f = 1MHz

Single half-sine-wave

(JEDEC method)

400

T_j= 25°C

300

200

100

V_R, REVERSE VOLTAGE (V)

NUMBER OF CYCLES AT 60 Hz

Fig. 3 Maximum Non-Repetitive Surge Current

Fig. 4 Typical Total Capacitance, Per Element

1000

T_j= 125°C

T_j= 100°C

100

T_j= 50°C

T_j= 25°C

1.0

0.1

100

PERCENT OF RATED PEAK REVERSE VOLTAGE (%)

Fig. 5 Typical Reverse Characteristics

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KBJ35A - KBJ35M

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