KBJ6009 [SENO]

6.0A GLASS PASSIVATED BRIDGE RECTIFIER;


型号：	KBJ6009
厂家：	Zibo Seno Electronic Engineering Co.,Ltd
描述：	6.0A GLASS PASSIVATED BRIDGE RECTIFIER
文件：	总2页 (文件大小：111K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Zibo Seno Electronic Engineering Co., Ltd.

KBJ6005 - KBJ610

6.0A GLASS PASSIVATED BRIDGE RECTIFIER

Features

Glass Passivated Die Construction

High Case Dielectric Strength of 1500V

KBJ4

Min

RMS

Low Reverse Leakage Current

Dim

Max

25.20

15.30

Surge Overload Rating to 170A Peak

24.80

14.70

Ideal for Printed Circuit Board Applications

Plastic Material - UL Flammability

Classification 94V-0

4.00 Nominal

17.20

0.90

7.30

17.80

1.10

7.70

Lead Free::For RoHS / Lead Free Version

3.10 Æ 3.40 Æ

Mechanical Data

3.30

1.50

9.30

2.50

3.40

4.40

0.60

3.70

1.90

9.70

2.90

3.80

4.80

0.80

Case: Molded Plastic

Terminals: Plated Leads, Solderable per

MIL-STD-202, Method 208

Polarity: Molded on Body

Mounting: Through Hole for #6 Screw

Mounting Torque: 5.0 in-lbs Maximum

Weight: 6.6 grams (approx)

All Dimensions in mm

Marking: Type Number

Maximum Ratings and Electrical Characteristics ^{@ T = 25°C unless otherwise specified}

Single phase, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

KBJ

6005

KBJ

601

KBJ

602

KBJ

604

KBJ

606

KBJ

608

KBJ

610

Characteristic

Symbol

Unit

V_RRM

V_RWM

V_R

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

100

200

140

400

600

420

800

560

1000

700

V_R(RMS)

RMS Reverse Voltage

280

6.0

Average Forward Rectified Output Current @ T_C= 110°C

I_O

Non-Repetitive Peak Forward Surge Current, 8.3 ms single

half-sine-wave superimposed on rated load

(JEDECmethod)

I_FSM

170

1.0

Forward Voltage per element

@ I_F= 3.0A

V_FM

I_R

Peak Reverse Current

at Rated DC Blocking Voltage

@ T_C= 25°C

@ T_C= 125°C

5.0

500

µA

I²t Rating for Fusing (t < 8.3ms) (Note 1)

I²t

C_j

120

A²s

Typical Junction Capacitance per Element (Note 2)

Typical Thermal Resistance Junction to Case (Note 3)

Operating and Storage Temperature Range

R_qJC

T_j, T_STG

1.8

°C/W

°C

-65 to +150

Notes:

1. Non-repetitive, for t > 1ms and < 8.3 ms.

2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.

3. Thermal resistance from junction to case per element. Unit mounted on 75 x 75 x 1.6mm aluminum plate heat sink.

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KBJ6005 - KBJ610

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Alldatasheet

Zibo Seno Electronic Engineering Co., Ltd.

KBJ6005 - KBJ610

With heatsink

1.0

Without heatsink

0.1

T_j= 25°C

Resistive or

Inductive load

Pulse width = 300µs

0.01

100

125

150

0.4

0.8

1.2

1.6 1.8

V_F, INSTANTANEOUS FORWARD VOLTAGE (V)

Fig. 2 Typical Forward Characteristics (per element)

T_C, CASE TEMPERATURE (°C)

Fig. 1 Forward Current Derating Curve

180

160

T_j= 25°C

f = 1MHz

Single half-sine-wave

(JEDEC method)

T_j= 150°C

120

100

NUMBER OF CYCLES AT 60 Hz

100

V_R, REVERSE VOLTAGE (V)

Fig. 4 Typical Junction Capacitance

Fig. 3 Maximum Non-Repetitive Surge Current

1000

100

T_j= 125°C

T_j= 100°C

1.0

0.1

T_j= 50°C

T_j= 25°C

100

120

140

PERCENT OF RATED PEAK REVERSE VOLTAGE (%)

Fig. 5 Typical Reverse Characteristics

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KBJ6005 - KBJ610

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Alldatasheet

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