KMB310S [SENO]
3.0A SURFACE MOUNT SCHOTTKY BARRIER BRIDGE RECTIFIER;型号: | KMB310S |
厂家: | Zibo Seno Electronic Engineering Co.,Ltd |
描述: | 3.0A SURFACE MOUNT SCHOTTKY BARRIER BRIDGE RECTIFIER |
文件: | 总2页 (文件大小:397K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Zibo Seno Electronic Engineering Co., Ltd.
KMB32S – KMB325S
3.0A SURFACE MOUNT SCHOTTKY BARRIER BRIDGE RECTIFIER
Features
G
!
!
!
!
!
!
Schottky Barrier Chip
Ideally Suited for Automatic Assembly
Low Power Loss, High Efficiency
High Surge Current Capability
-
+
~
H
B
~
D
E
For Use in Low Voltage Application
Plastic Case Material has UL Flammability
Classification Rating 94V-O
A
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
MB-S
Dim
A
Min
4.50
3.60
0.15
—
6.40
0.50
1.30
2.30
2.30
—
Max
4.95
4.10
0.35
0.20
7.00
1.10
1.70
2.70
2.70
3.00
J
Mechanical Data
B
C
!
!
Case: MB-S, Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
D
K
E
G
H
!
!
!
!
!
Polarity: As Marked on Case
Weight: 0.22 grams (approx.)
Mounting Position: Any
Marking: Type Number
Lead Free: For RoHS / Lead Free Version
J
K
L
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
KMB
32S
KMB KMB KMB
KMB KMB KMB
KMB
KMB KMB
Symbol
Unit
Characteristic
34S
33S
35S
315S 320S 325S
36S
38S
310S
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
V
RWM
20
14
30
40
50
60
80
100
150
105
200
140
250
175
V
V
R
RMS Reverse Voltage
VR(RMS)
IO
21
28
35
42
56
70
V
A
Average Rectified Output Current @TL = 90°C
3.0
50
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
IFSM
A
Forward Voltage
@IF = 3.0A
VFM
IRM
0.50
0.70
0.85
0.95
0.92
V
Peak Reverse Current
@TA = 25°C
0.1
20
mA
At Rated DC Blocking Voltage @TA = 100°C
Typical Thermal Resistance (Note 1)
Typical Junction Capacitance
JL
Rꢀ
10
50
°C/W
RꢀJA
Cj
pF
°C
°C
110
110
30
Operating Temperature Range
Storage Temperature Range
Tj
-65 to +150
-65 to +150
TSTG
Note: 1. Mounted on P.C. Board with 5.0mm2 copper pad area.
www.senocn.com
KMB32S – KMB325S
1 of 2
Alldatasheet
Zibo Seno Electronic Engineering Co., Ltd.
KMB32S – KMB325S
10
80-100
3.0
250
50-60
20-40
115-120
1.0
0.1
Tj - 25ºC
IF Pulse Width = 300 µs
1.0
0.01
25
50
75
100
125
150
0
0.4
0.8
1.2
TL, LEAD TEMPERATURE (ºC)
VF, INSTANTANEOUS FWD VOLTAGE (V)
Fig. 2 Typ. Forward Characteristics
Fig. 1 Forward Current Derating Curve
1000
100
80
Tj = 25°C
f = 1 MHz
Single Half-Sine-Wave
(JEDEC Method)
Tj = 100°C
60
40
100
20
0
10
0.1
1
10
100
1
10
NUMBER OF CYCLES AT 60 Hz
100
VR, REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
Fig. 3 Max Non-Repetitive Peak Fwd Surge Current
100
10
Tj = 100ºC
1.0
Tj = 75ºC
0.1
0.01
Tj = 25ºC
0.001
60
100 120
0
80
140
40
20
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 5 Typical Reverse Characteristics
www.senocn.com
KMB32S – KMB325S
2 of 2
Alldatasheet
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