KMB320F [SENO]

3.0A SURFACE MOUNT SCHOTTKY BARRIER BRIDGE RECTIFIER;


型号：	KMB320F
厂家：	Zibo Seno Electronic Engineering Co.,Ltd
描述：	3.0A SURFACE MOUNT SCHOTTKY BARRIER BRIDGE RECTIFIER
文件：	总2页 (文件大小：394K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Zibo Seno Electronic Engineering Co., Ltd.

KMB32F – KMB325F

3.0A SURFACE MOUNT SCHOTTKY BARRIER BRIDGE RECTIFIER

Features

Schottky Barrier Chip

Ideally Suited for Automatic Assembly

Low Power Loss, High Efficiency

High Surge Current Capability

For Use in Low Voltage Application

Plastic Case Material has UL Flammability

Classification Rating 94V-O

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MB-F

Dim

Min

4.50

3.60

0.15

—

6.40

0.50

1.30

1.20

2.30

—

Max

4.95

4.10

0.35

0.20

7.00

1.10

1.70

1.60

2.70

1.80

Mechanical Data

Case: MB-F, Molded Plastic

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

Polarity: As Marked on Case

Weight: 0.134 grams (approx.)

Mounting Position: Any

Marking: Type Number

Lead Free: For RoHS / Lead Free Version

All Dimensions in mm

Maximum Ratings and Electrical Characteristics ^@T_A^{=25°C unless otherwise specified}

KMB

32F

KMB KMB KMB

KMB

KMB KMB

Symbol

Unit

Characteristic

34F

33F

35F

315F 320F 325F

36F

38F

310F

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V^RRM

RWM

100

150

105

200

140

250

175

RMS Reverse Voltage

V^R(RMS)

I^O

Average Rectified Output Current @T_L= 90°C

3.0

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed on

rated load (JEDEC Method)

I^FSM

Forward Voltage

@I_F= 3.0A

V^FM

I^RM

0.50

0.70

0.85

0.95

0.92

Peak Reverse Current

@T_A= 25°C

0.1

At Rated DC Blocking Voltage @T_A= 100°C

Typical Thermal Resistance (Note 1)

Typical Junction Capacitance

R^ꢀ

°C/W

R^ꢀ^JA

C_j

°C

110

Operating Temperature Range

Storage Temperature Range

T^j

-65 to +150

T^STG

Note: 1. Mounted on P.C. Board with 5.0mm²copper pad area.

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KMB32S – KMB325S

1 of 2

Alldatasheet

Zibo Seno Electronic Engineering Co., Ltd.

KMB32F – KMB325F

80-100

3.0

250

50-60

20-40

115-120

1.0

0.1

T_j- 25ºC

I_FPulse Width = 300 µs

1.0

0.01

100

125

150

0.4

0.8

1.2

T_L, LEAD TEMPERATURE (ºC)

V_F, INSTANTANEOUS FWD VOLTAGE (V)

Fig. 2 Typ. Forward Characteristics

Fig. 1 Forward Current Derating Curve

1000

100

T_j= 25°C

f = 1 MHz

Single Half-Sine-Wave

(JEDEC Method)

T_j= 100°C

100

0.1

100

NUMBER OF CYCLES AT 60 Hz

100

V_R, REVERSE VOLTAGE (V)

Fig. 4 Typical Junction Capacitance

Fig. 3 Max Non-Repetitive Peak Fwd Surge Current

100

T_j= 100ºC

1.0

T_j= 75ºC

0.1

0.01

T_j= 25ºC

0.001

100 120

140

PERCENT OF RATED PEAK REVERSE VOLTAGE (%)

Fig. 5 Typical Reverse Characteristics

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KMB32F – KMB325F

2 of 2

Alldatasheet

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