PAM33DOAB26A [SENO]

12 to 33Volts 5000Watts SMD TRANSIENT VOLTAGE SUPPRESSORS;
PAM33DOAB26A
型号: PAM33DOAB26A
厂家: Zibo Seno Electronic Engineering Co.,Ltd    Zibo Seno Electronic Engineering Co.,Ltd
描述:

12 to 33Volts 5000Watts SMD TRANSIENT VOLTAGE SUPPRESSORS

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中文:  中文翻译
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Zibo Seno Electronic Engineering Co., Ltd.  
PAM33DOAB SERIES  
12 to 33Volts 5000Watts SMD TRANSIENT VOLTAGE SUPPRESSORS  
Features  
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Glass Passivated Die Construction  
5000W Peak Pulse Power Dissipation  
12V-33V Standoff Voltage  
Uni- and Bi-Directional Versions Available  
Excellent Clamping Capability  
Fast Response Time  
SMC/DO-214AB  
B
Plastic Case Material has UL Flammability  
Dim  
A
Min  
5.59  
6.60  
2.75  
0.15  
7.75  
0.10  
0.76  
2.00  
Max  
6.22  
7.11  
3.18  
0.31  
8.13  
0.20  
1.52  
2.62  
ꢀ ꢀ ꢀ ꢀ ꢀ  
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
B
C
D
E
G
H
J
A
C
Mechanical Data  
!
!
!
!
D
Case: SMC/DO-214AB Molded Plastic  
Terminals:Solderable per  
MIL-STD-202, Method 208  
J
Polarity: Cathode Band or Cathode Notch  
Marking:  
Unidirectional – Device Code and Cathode Band  
Bidirectional – Device Code Only  
Weight: 0.21 grams (approx.)  
G
E
H
All Dimensions in mm  
!
!
“C” Suffix Designates Bi-directional Devices  
“A” Suffix Designates 5% Tolerance Devices  
No Suffix Designates 10% Tolerance Devices  
Lead Free: For RoHS / Lead Free Version  
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
Characteristic  
Symbol  
PPPM  
Value  
5000 Minimum  
300  
Unit  
W
Peak Pulse Power Dissipation at TA = 25°C (Note 1, 2, 5) Figure 3  
Peak Forward Surge Current (Note 3)  
IFSM  
A
Peak Pulse Current on 10/1000µS Waveform (Note 1) Figure 1  
Steady State Power Dissipation (Note 2, 4)  
IPPM  
See Table 1  
5.0  
A
PM(AV)  
Tj, TSTG  
W
Operating and Storage Temperature Range  
-55 to +150  
°C  
Note: 1. Non-repetitive current pulse, per Figure 1 and derated above TA = 25°C per Figure 4.  
2. Mounted on 40mm2 copper pad.  
3. 8.3ms single half sine-wave duty cycle = 4 pulses per minutes maximum.  
4. Lead temperature at 75°C = TL .  
5. Peak pulse power waveform is 10/1000µS.  
www.senocn.com  
PAM33DOAB SERIES  
1 of 3  
Zibo Seno Electronic Engineering Co., Ltd.  
PAM33DOAB SERIES  
10,000  
100  
75  
Measured at  
zero bias  
Uni-directional  
1000  
50  
Bi-directional  
100  
25  
0
Tj = 25°C  
10 X 1000 Waveform  
as defined by REA  
f = 1.0 MHz  
Vsig = 50 mV p-p  
10  
1
10  
100  
1000  
0
25  
50  
75 100 125 150 175 200  
V
RWM, REVERSE STANDOFF VOLTAGE (V)  
Fig. 2 Typical Total Capacitance  
TA, AMBIENT TEMPERATURE (°C)  
Fig. 1 Pulse Derating Curve  
100  
10  
Tj = 25°C  
100  
50  
0
Peak Value Ipp  
Non Repetitive  
Pulse Waveform  
Shown in Fig. 4  
Half Value Ipp/2  
1.0  
0.1  
tp  
10 X 1000 Waveform  
as defined by R.E.A.  
3
0
1
2
0.1  
1.0  
10  
100  
1000  
10000  
t, TIME (ms)  
Fig. 4 Pulse Waveform  
300  
200  
5.0  
4.0  
3.0  
2.0  
1.0  
0.0  
Pulse Width 8.3ms  
Single Half-Sine-Wave  
(JEDEC METHOD)  
100  
60Hz Resistive or  
Inductive Load  
10  
75 100 125  
175  
0
25  
50  
200  
150  
1
100  
2
5
20  
50  
10  
TL, LEAD TEMPERATURE (°C)  
NUMBER OF CYCLES AT 60Hz  
Fig. 5, Maximum Non-Repetitive Surge Current  
Fig. 6 Steady State Power Derating Curve  
www.senocn.com  
PAM33DOAB SERIES  
2 of 3  
Zibo Seno Electronic Engineering Co., Ltd.  
PAM33DOAB SERIES  
UNI/BI-DIRECTIONAL 12 to 33Volts 5000W SMD TRANSIENT VOLTAGE SUPPRESSORS  
Maximum  
Reverse  
Stand-Off  
Voltage  
Breakdown Breakdown  
Peak  
Pulse  
Current  
Reverse  
Leakage  
@VRMW  
Test  
Current  
Clamping  
Voltage  
@IPP  
Type Number  
Marking  
Voltage  
Voltage  
Min. @IT  
Max. @ IT  
(Uni)  
(Bi)  
(Uni)  
(Bi)  
VRMW(V)  
12.0  
15.0  
16.0  
17.0  
18.0  
20.0  
22.0  
24.0  
26.0  
28.0  
30.0  
33.0  
VBR MIN(V)  
13.30  
16.70  
17.80  
18.90  
20.00  
22.20  
24.40  
26.70  
28.90  
31.10  
33.30  
36.70  
VBR MAX(V)  
14.70  
18.50  
20.50  
20.90  
22.10  
24.50  
26.90  
29.50  
31.90  
34.40  
36.80  
40.60  
IT (mA)  
10.0  
1.0  
VC(V)  
19.9  
24.4  
26.0  
27.5  
29.2  
32.4  
35.5  
38.9  
42.1  
45.4  
48.4  
53.3  
IPP(A)  
252.0  
205.0  
193.0  
181.0  
172.0  
155.0  
141.0  
129.0  
119.0  
110.0  
103.0  
93.9  
IR(uA)  
800.0  
100.0  
50.0  
20.0  
10.0  
5.0  
PAM33DOAB12A  
PAM33DOAB15A  
PAM33DOAB16A  
PAM33DOAB17A  
PAM33DOAB18A  
PAM33DOAB20A  
PAM33DOAB12CA 5PEP 5BEP  
PAM33DOAB15CA  
PAM33DOAB16CA  
5PES 5BES  
5PET 5BET  
1.0  
PAM33DOAB17CA 5PEU 5BEU  
1.0  
PAM33DOAB18CA  
5PEV 5BEV  
1.0  
PAM33DOAB20CA 5PEW 5BEW  
1.0  
5PEX 5BEX  
5PEZ 5BEZ  
1.0  
5.0  
PAM33DOAB22A  
PAM33DOAB24A  
PAM33DOAB22CA  
PAM33DOAB24CA  
1.0  
5.0  
PAM33DOAB26A  
PAM33DOAB28A  
PAM33DOAB30A  
PAM33DOAB33A  
PAM33DOAB26CA 5PFE 5BFE  
1.0  
5.0  
PAM33DOAB28CA  
5PFG 5BFG  
1.0  
5.0  
PAM33DOAB30CA 5PFK 5BFK  
1.0  
5.0  
PAM33DOAB33CA  
5PFM 5BFM  
1.0  
5.0  
Notes: 1. Suffix C denotes Bi-directional device.  
2. VBR measured with I current pulse = 300ms.  
T
3. For Bi-Directional devices having V  
of 10V and under, the I is doubled.  
RWM  
R
www.senocn.com  
PAM33DOAB SERIES  
3 of 3  

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