RBV-405 [SENO]

4.0A GLASS PASSIVATED BRIDGE RECTIFIER;


型号：	RBV-405
厂家：	Zibo Seno Electronic Engineering Co.,Ltd
描述：	4.0A GLASS PASSIVATED BRIDGE RECTIFIER
文件：	总2页 (文件大小：97K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Zibo Seno Electronic Engineering Co., Ltd.

RBV-401 - RBV-407

4.0A GLASS PASSIVATED BRIDGE RECTIFIER

Features

Glass Passivated Die Construction

High Case Dielectric Strength of 1000V_RMS

GBJ4

Min

Low Reverse Leakage Current

Dim

Max

25.20

15.30

Surge Overload Rating to 100A Peak

Ideal for Printed Circuit Board Applications

24.80

14.70

Plastic Material - UL Flammability

Classification 94V-0

4.00 Nominal

17.20

0.90

7.30

17.80

1.10

7.70

Lead Free Finish/RoHS Complian

3.10 Æ 3.40 Æ

Mechanical Data

3.30

1.50

9.30

2.50

3.40

4.40

0.60

3.70

1.90

9.70

2.90

3.80

4.80

0.80

Case: Molded Plastic

Terminals: Plated Leads, Solderable per

MIL-STD-202, Method 208

Polarity: Molded on Body

Mounting: Through Hole for #6 Screw

Mounting Torque: 5.0 in-lbs Maximum

Approx. Weight: 4.6 grams

All Dimensions in mm

Marking: Type Number

@ T_A= 25°C unless otherwise specified

Maximum Ratings and Electrical Characteristics

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

RBV-

401

RBV-

402

RBV-

403

RBV- RBV-

RBV-

406

RBV-

407

Characteristic

Symbol

Unit

404

405

600

420

V_RRM

V_RWM

V_R

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

100

200

140

400

800

560

1000

700

V_R(RMS)

RMS Reverse Voltage

280

4.0

Average Rectified Output Current

@ T_C= 115°C

I_O

Non-Repetitive Peak Forward Surge Current, 8.3 ms single

half-sine-wave superimposed on rated load

(JEDEC method)

I_FSM

100

1.0

Forward Voltage per element

@ I_F= 2.0A

V_FM

I_RM

Peak Reverse Current

at Rated DC Blocking Voltage

@T_C= 25°C

@ T_C= 125°C

2.0

500

µA

C_j

Typical Junction Capacitance per Element (Note 1)

Typical Thermal Resistance (Note 2)

5.5

°C/W

°C

R_qJC

T_j, T_STG

Operating and Storage Temperature Range

-55 to +150

Notes:

1. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.

2. Thermal resistance from junction to case per element. Unit mounted on 300 x 300 x 1.6mm aluminum plate heat sink.

www.senocn.com

RBV-401 - RBV-407

1 of 2

Zibo Seno Electronic Engineering Co., Ltd.

RBV-401 - RBV-407

T_J= 150°C

Al. Substrate PC Board

T_J= 25°C

1.0

0.1

Resistive or

Inductive load

Pulse width = 300µs

0.01

100

125

150

0.4

0.8

1.2

1.6 1.8

V_F, INSTANTANEOUS FORWARD VOLTAGE (V)

Fig. 2 Typical Forward Characteristics

T_C, CASE TEMPERATURE (°C)

Fig. 1 Forward Current Derating Curve

180

160

1000

f = 1MHz

T_j= 25°C

Single half-sine-wave

(JEDEC method)

T_j= 150°C

120

100

0.1

1.0

100

V_R, REVERSE VOLTAGE (V)

NUMBER OF CYCLES AT 60 Hz

Fig. 3 Max Non-Repetitive Surge Current

Fig. 4 Typical Junction Capacitance

1000

T_J= 150°C

T_J= 125°C

T_J= 100°C

100

1.0

0.1

T_J= 25°C

100

120

140

PERCENT OF RATED PEAK REVERSE VOLTAGE (%)

Fig. 5 Typical Reverse Characteristics

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RBV-401 - RBV-407

2 of 2

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