RS2001M [SENO]
20A GLASS PASSIVATED BRIDGE RECTIFIER;型号: | RS2001M |
厂家: | Zibo Seno Electronic Engineering Co.,Ltd |
描述: | 20A GLASS PASSIVATED BRIDGE RECTIFIER 局域网 二极管 |
文件: | 总2页 (文件大小:119K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Zibo Seno Electronic Engineering Co., Ltd.
RS20005M - RS2010M
20A GLASS PASSIVATED BRIDGE RECTIFIER
Features
·
·
·
·
·
·
Glass Passivated Die Construction
High Case Dielectric Strength of 1500V
RS-20M
RMS
Dim
A
B
C
D
E
Min
29.70
19.70
17.00
3.80
7.30
9.80
2.00
0.90
2.30
Max
30.30
20.30
18.00
4.20
Low Reverse Leakage Current
Surge Overload Rating to 350A Peak
Ideal for Printed Circuit Board Applications
L
Plastic Material - UL Flammability
Classification 94V-0
A
M
K
·
Lead Free::For RoHS / Lead Free Version
7.70
B
D
G
H
I
10.20
2.40
S
N
_
J
1.10
Mechanical Data
P
J
2.70
H
I
C
·
·
Case: Molded Plastic
K
L
3.0 X 45°
R
Terminals: Plated Leads, Solderable per
MIL-STD-202, Method 208
4.40
3.40
3.10
2.50
0.60
10.80
4.80
3.80
3.40
2.90
0.80
11.20
M
N
P
·
·
·
·
·
Polarity: Molded on Body
Mounting: Through Hole for #6 Screw
Mounting Torque: 5.0 in-lbs Maximum
Weight: 6.6 grams (approx)
G
E
E
R
S
Marking: Type Number
All Dimensions in mm
Maximum Ratings and Electrical Characteristics@ T = 25°C unless otherwise specified
A
Single phase, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RS
RS
RS
RS
RS
20005M 2001M 2002M 2004M 2006M 2008M 2010M
RS
RS
Characteristic
Symbol
Unit
VRRM
VRWM
VR
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
50
35
100
70
200
140
400
600
420
800
560
1000
700
V
VR(RMS)
IO
RMS Reverse Voltage
280
20
V
A
Average Forward Rectified Output Current
(Note 1)
@ TC = 100°C
Non-Repetitive Peak Forward Surge Current 8.3 ms
single half sine-wave superimposed on rated load
(JEDEC Method)
IFSM
240
A
Forward Voltage (per element)
@ IF = 10.0A
VFM
IR
1.05
V
Peak Reverse Current
at Rated DC Blocking Voltage
@TC = 25°C
@ TC = 125°C
2.0
500
µA
I2t Rating for Fusing (t < 8.3ms) (Note 1)
I2t
Cj
510
85
A2s
pF
Typical Junction Capacitance (per element) (Note 2)
Typical Thermal Resistance Junction to Case (Note 3)
Operating and Storage Temperature Range
RqJC
Tj, TSTG
0.6
°C/W
°C
-55 to +150
Notes:
1. Non-repetitive, for t > 1ms and < 8.3 ms.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.
3. Thermal resistance from junction to case per element. Unit mounted on 220 x 220 x 1.6mm aluminum plate heat sink.
www.senocn.com
RS25005M - RS2510M
1 of 2
Zibo Seno Electronic Engineering Co., Ltd.
RS20005M - RS2010M
100
25
20
With heatsink
10
15
10
5
1.0
Without heatsink
0.1
Tj = 25°C
Resistive or
Inductive load
0
25
75
50
100
125
150
0.01
100
0
0.4
0.8
1.2
1.6
2.0
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics (per element)
TC, CASE TEMPERATURE (°C)
Fig. 1 Forward Current Derating Curve
250
Tj = 25°C
f = 1MHz
Tj = 25°C
Single half-sine-wave
200
150
100
10
50
0
1
1
100
10
NUMBER OF CYCLES AT 60 Hz
1
10
100
VR, REVERSE VOLTAGE (V)
Fig. 4 Typical Total Capacitance, Per Element
Fig. 3 Maximum Non-Repetitive Surge Current
1000
Tj = 125°C
Tj = 100°C
100
10
Tj = 50°C
Tj = 25°C
1.0
0.1
20
40
80
100
0
60
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 5 Typical Reverse Characteristics
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RS20005M - RS2010M
2 of 2
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