RS2004M [SENO]

20A GLASS PASSIVATED BRIDGE RECTIFIER;


型号：	RS2004M
厂家：	Zibo Seno Electronic Engineering Co.,Ltd
描述：	20A GLASS PASSIVATED BRIDGE RECTIFIER 局域网二极管
文件：	总2页 (文件大小：119K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Zibo Seno Electronic Engineering Co., Ltd.

RS20005M - RS2010M

20A GLASS PASSIVATED BRIDGE RECTIFIER

Features

Glass Passivated Die Construction

High Case Dielectric Strength of 1500V

RS-20M

RMS

Dim

Min

29.70

19.70

17.00

3.80

7.30

9.80

2.00

0.90

2.30

Max

30.30

20.30

18.00

4.20

Low Reverse Leakage Current

Surge Overload Rating to 350A Peak

Ideal for Printed Circuit Board Applications

Plastic Material - UL Flammability

Classification 94V-0

Lead Free::For RoHS / Lead Free Version

7.70

10.20

2.40

1.10

Mechanical Data

2.70

Case: Molded Plastic

3.0 X 45°

Terminals: Plated Leads, Solderable per

MIL-STD-202, Method 208

4.40

3.40

3.10

2.50

0.60

10.80

4.80

3.80

3.40

2.90

0.80

11.20

Polarity: Molded on Body

Mounting: Through Hole for #6 Screw

Mounting Torque: 5.0 in-lbs Maximum

Weight: 6.6 grams (approx)

Marking: Type Number

All Dimensions in mm

Maximum Ratings and Electrical Characteristics^{@ T = 25°C unless otherwise specified}

Single phase, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

20005M 2001M 2002M 2004M 2006M 2008M 2010M

Characteristic

Symbol

Unit

V_RRM

V_RWM

V_R

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

100

200

140

400

600

420

800

560

1000

700

V_R(RMS)

I_O

RMS Reverse Voltage

280

Average Forward Rectified Output Current

(Note 1)

@ T_C= 100°C

Non-Repetitive Peak Forward Surge Current 8.3 ms

single half sine-wave superimposed on rated load

(JEDEC Method)

I_FSM

240

Forward Voltage (per element)

@ I_F= 10.0A

V_FM

I_R

1.05

Peak Reverse Current

at Rated DC Blocking Voltage

@T_C= 25°C

@ T_C= 125°C

2.0

500

µA

I²t Rating for Fusing (t < 8.3ms) (Note 1)

I²t

C_j

510

A²s

Typical Junction Capacitance (per element) (Note 2)

Typical Thermal Resistance Junction to Case (Note 3)

Operating and Storage Temperature Range

R_qJC

T_j,T_STG

0.6

°C/W

°C

-55 to +150

Notes:

1. Non-repetitive, for t > 1ms and < 8.3 ms.

2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.

3. Thermal resistance from junction to case per element. Unit mounted on 220 x 220 x 1.6mm aluminum plate heat sink.

www.senocn.com

RS25005M - RS2510M

1 of 2

Zibo Seno Electronic Engineering Co., Ltd.

RS20005M - RS2010M

100

With heatsink

1.0

Without heatsink

0.1

T_j= 25°C

Resistive or

Inductive load

100

125

150

0.01

100

0.4

0.8

1.2

1.6

2.0

V_F, INSTANTANEOUS FORWARD VOLTAGE (V)

Fig. 2 Typical Forward Characteristics (per element)

T_C, CASE TEMPERATURE (°C)

Fig. 1 Forward Current Derating Curve

250

T_j= 25°C

f = 1MHz

T_j= 25°C

Single half-sine-wave

200

150

100

NUMBER OF CYCLES AT 60 Hz

100

V_R, REVERSE VOLTAGE (V)

Fig. 4 Typical Total Capacitance, Per Element

Fig. 3 Maximum Non-Repetitive Surge Current

1000

T_j= 125°C

T_j= 100°C

100

T_j= 50°C

T_j= 25°C

1.0

0.1

100

PERCENT OF RATED PEAK REVERSE VOLTAGE (%)

Fig. 5 Typical Reverse Characteristics

www.senocn.com

RS20005M - RS2010M

2 of 2

相关型号：