SL10T150L [SENO]
10.0 A SUPER BARRIER RECTIFIER;
| 型号： | SL10T150L |
| 厂家： | 
Zibo Seno Electronic Engineering Co.,Ltd |
| 描述： | 10.0 A SUPER BARRIER RECTIFIER |
| 文件： | 总2页 (文件大小：190K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Zibo Seno Electronic Engineering Co., Ltd.
SL10T80L - SL10T200L
10.0 A SUPER BARRIER RECTIFIER
Features
!
!
!
Schottky Barrier Chip
Bypass Diodes for Solar Panels
ꢀ
TO-277B
High Junction Temperture
High Thermal Reliability
Patented Super Barrier Rectifier Technology
High Foward Surge Capability
Ultra Low Power Loss, High Efficiency
Excellent High Temperature Stability
!
!
!
!
!
1.90
1.70
1.95
1.65
4.20
3.80
5.50
5.30
3.85
3.25
0.65
0.45
Mechanical Data
3.20
2.90
!
!
Case:TO-277B Molded Plastic "Green" Molding Compound
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
1.00
0.80
1.20
1.00
!
!
!
!
Polarity: Cathode Band
Weight: 0.093 grams (approx.)
Mounting Position: Any
0.45
0.20
1.20
1.00
6.60
6.40
Marking: Type Number
Lead Free: For RoHS/Lead Free Version
!
Dimensions in millimeters
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SL10T80L
SL10T100L
100
SL10T120L
120
SL10T150L
150
SL10T200L
200
Characteristic
Symbol
Unit
V
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
80
56
RMS Reverse Voltage
VR(RMS)
IO
70
84
10
105
140
V
A
Average Rectified Output Current
(Note 1)
@TL = 100°C
Non-Repetitive Peak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load
(JEDEC Method)
IFSM
I2t
200
166
A
I2t Rating for Fusing (t<8.3ms)
A2s
Typ. Max. Typ. Max. Typ. Max. Typ. Max. Typ. Max.
Forward Voltage Drop
@I
0.38
0.50
-
-
0.38
0.50
-
-
0.46
0.64
-
-
0.49
0.67
-
-
0.62
0.73
-
-
= 25°C
= 25°C
= 25°C
F = 1.0A
F = 5.0A
F = 10A
TA
TA
TA
VFM
V
@I
@I
0.57 0.63
0.59 0.64
0.73 0.79
0.74 0.80
0.81 0.86
Peak Reverse Current
At Rated DC Blocking Voltage
@TA = 25°C
@TA = 100°C
0.3
15
IRM
mA
Typical Thermal Resistance (Note 1)
RꢀJA
110
°C/W
°C
Operating and Storage Temperature Range
Tj, TSTG
-55 to +150
Note: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.
2. FR-4 PCB, 2oz. Copper, minimum recommended pad layout .
3. Polymide PCB, 2oz. Copper. Cathode pad dimensions 18.8mm x 14.4mm. Anode pad dimensions 5.6mm x 14.4mm.
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SL10T80L - SL10T200L
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Zibo Seno Electronic Engineering Co., Ltd.
SL10T80L - SL10T200L
FIG.2 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
FIG.1 - FORWARD CURRENT DERATING CURVE
10.0
10
8.0
6.0
4.0
2.0
1
0.1
0.01
TJ=25oC
PULSE WIDTH=300uS
1% DUTY CYCLE
60 Hz Resistive or
Inductive load
0
0
50
100
150
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
LEAD TEMPERATURE, oC
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
FIG.3 - MAXIMUM NON-REPETITIVE
PEAK FORWARD SURGE CURRENT
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
100
200
175
150
125
100
75
Pulse Width 8.3ms
Single Half-Sire-Wave
(JEDEC Method)
10
TJ=100oC
1
0.1
50
TJ=25oC
25
0.01
0
0
20
40
60
80
100
1
10
100
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
NUMBER OF CYCLES AT 60Hz
R
FIG.5 - TYPICAL JUNCTION CAPACITANCE
10000
1000
100
TJ = 25oC
f = 1.0 MHZ
Vsig = 50mVp-p
0.1
1.0
4.0 10
100
REVERSE VOLTAGE, VOLTS
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SL10T80L - SL10T200L
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