1C6623AG [SENSITRON]

800V, SILICON, SIGNAL DIODE, DIE-1;
1C6623AG
型号: 1C6623AG
厂家: SENSITRON    SENSITRON
描述:

800V, SILICON, SIGNAL DIODE, DIE-1

文件: 总2页 (文件大小:33K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
1C6623  
1C6624  
1C6625  
SENSITRON  
SEMICONDUCTOR  
TECHNICAL DATA  
DATASHEET 5130, REV-  
SILICON ULTRA-FAST RECOVERY EPITAXIAL RECTIFIER DIE  
Applications:  
Switching Power Supply Converters Free-Wheeling Diodes Polarity Protection Diode  
Features:  
Glass passivated Epitaxial Diode with Mesa Structure  
Soft Reverse Recovery at Low and High Temperature  
Low Forward Voltage Drop and Low Reverse Current  
Electrically and Mechanically Stable during and after Packaging  
Maximum Ratings:  
Characteristics  
Peak Inverse Voltage  
1C6623  
1C6624  
1C6625  
Max. Output Current  
Symbol  
VRWM  
Condition  
Max.  
Units  
V
-
800  
900  
1000  
1.0  
IO  
50% duty cycle, rectangular wave  
form; TA = 55 oC  
A
A
Max. Peak One Cycle Non-  
Repetitive Surge Current  
1C6623  
IFSM  
8.3 ms, sine pulse (1)  
20  
20  
1C6624  
1C6625  
15  
Max. Junction Temperature  
Max. Storage Temperature  
Reverse Recovery Time  
1C6623  
TJ  
Tstg  
trr  
-
-
-55 to +175  
-55 to +200  
°C  
°C  
nS  
IF=0.5A, IR=1.0A, IRM=0.25A  
50  
50  
60  
1C6624  
1C6625  
Electrical Characteristics:  
Characteristics  
Max. Forward Voltage Drop  
1C6623  
Symbol  
Condition  
1.5A, pulse, TJ = 25 °C  
Max.  
Units  
VF1  
V
1.80  
1.80  
1.95  
1C6624  
1C6625  
Max. Reverse Current  
1C6623  
IR1  
VR = VRWM, pulse, TJ = 25 °C  
μA  
0.5  
0.5  
1.0  
150  
10  
1C6624  
1C6625  
IR2  
CT  
VR = VRWM, pulse, TJ = 150 °C  
VR = 10V, TC = 25 °C  
μA  
pF  
Max. Junction Capacitance  
(1) in TO package  
f
SIG = 0.1 to 1MHz,  
SIG = 50mV (p-p)  
V
©2012 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729-4681  
(631) 586-7600 FAX (631) 242-9798 www.sensitron.com sales@sensitron.com •  
1C6623  
1C6624  
1C6625  
SENSITRON  
SEMICONDUCTOR  
TECHNICAL DATA  
DATASHEET 5130, REV-  
Mechanical Dimensions: In Inches (mm)  
Bottom side metalization: Ti/Ni/Ag - 30 kÅ minimum.  
Top side metalization: Al - 25 kÅ minimum  
Bottom side is cathode, top side is anode.  
0.020 ± 0.003  
(0.508 ± 0.076) (0.864 ± 0.076)  
0.034 ± 0.003  
ANODE  
Anode  
0.009 ± 0.001 (0.229 ± 0.025)  
Cathode  
PART ORDERING INFORMATION  
Default part number is Al top, Ag bottom.  
Add the following suffix for these metal combinations:  
Suffix  
Top  
Bottom  
Part Number  
Al  
Al  
Ag  
Ag  
Au  
Au  
Ag  
Au  
Ag  
Au  
Au  
Ag  
1C3595  
AG  
BB  
BG  
GG  
GB  
-R  
1C3595AG  
1C3595BB  
1C3595BG  
1C3595GG  
1C3595GB  
1C3595-R  
- Reverse polarity -  
A = Ti (0.3 kA) / Al (25 kA)  
B = Ti (1.2 kA) / Ni (1.8 kA) / Ag (30kA)  
G = Ti (1.2 kA) / Ni (1.8 kA) / Au (12kA) (TOP) / Ti (1.2 kA) / Ni (1.8 kA) / Au (4kA) (BOTTOM)  
DISCLAIMER:  
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product  
characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the  
datasheet(s).  
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical  
equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’  
fail-safe precautions or other arrangement .  
3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of  
the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any  
other problems that may result from applications of information, products or circuits described in the datasheets.  
4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from use at  
a value exceeding the absolute maximum rating.  
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor.  
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of Sensitron  
Semiconductor.  
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder  
maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When  
exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations.  
©2012 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729-4681  
(631) 586-7600 FAX (631) 242-9798 www.sensitron.com sales@sensitron.com •  

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