KBPC25-10S [SENSITRON]

25A, 1000V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, KBPC-S, 4 PIN;


型号：	KBPC25-10S
厂家：	SENSITRON
描述：	25A, 1000V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, KBPC-S, 4 PIN PC
文件：	总2页 (文件大小：118K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SENSITRON

KBPC15, 25, 35S SERIES

SEMICONDUCTOR

15, 25, 35A IN-LINE BRIDGE RECTIFIER

Data sheet 1300, Rev. -

Features

ꢀ

Diffused Junction

ꢀ

Low Forward Voltage Drop

High Current Capability

High Reliability

High Surge Current Capability

Ideal for Printed Circuit Boards

Designed for Saving Mounting Space

KBPC-S

Dim Min

Max Min

Max

28.40 28.70 1.12

1.13

10.97 11.23 0.432 0.442

13.90

19.10

5.10

—

0.547

0.752

0.201

—

Mechanical Data

ꢀ

1.20 Ø Typical 0.047 ØTypical

3.05 0.120 3.60

In mm

0.142

Case: Epoxy Case with Heat Sink Internally

Mounted in the Bridge Encapsulation

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

In inch

ꢀ

E E

ꢀ

Polarity: As Marked on Body

Weight: 30 grams (approx.)

Mounting Position: Any

METAL HEATSINK

Marking: Type Number

Maximum Ratings and Electrical Characteristics @T_A=25°C unless otherwise specified

Single Phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Characteristics

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

Symbol

-00S -01S -02S -04S -06S -08S -10S

Unit

VRRM

V^RWM

V^R

100

200

140

400

600

420

800

560

1000

700

RMS Reverse Voltage

VR(RMS)

280

KBPC15

KBPC25

KBPC35

Average Rectified Output Current

@T_C= 60°C

I^O

Non-Repetitive Peak Forward Surge Current,

8.3ms Single Half-sine-wave Superimposed

on Rated Load (JEDEC Method)

KBPC15

KBPC25

KBPC35

300

400

IFSM

KBPC15 @I_F= 7.5A

KBPC25 @I_F= 12.5A

KBPC35 @I_F= 17.5A

Forward Voltage Drop

(per element)

V^FM

1.2

Peak Reverse Current at

Rated DC Blocking Voltage (per element)

@T_A= 25°C

@T_A= 100°C

1.0

µA

I^R

KBPC15

KBPC25

KBPC35

374

664

I²t Rating for Fusing (t < 8.3ms) (Note 1)

I²t

A²s

Typical Thermal Resistance (per element) (Note 2)

RMS Isolation Voltage from Case to Lead

Operating and Storage Temperature Range

RθJC

VISO

2.0

2500

K/W

Tj, TSTG

-55 to +150

°C

Note: 1. Non-repetitive for t > 1ms and < 8.3ms.

2. Thermal resistance junction to case per element mounted on 8" x 8" x 25" thick AL plate.

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100

Mounted on a

220 x 220 x 50 mm

AL plate heatsink

KBPC35

KBPC25

1.0

KBPC15

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0.1

T_j= 25°C

Resistive or

Inductive load

Pulse Width = 300µs

0.01

100

125

150

1.6

1.8

1.4

0.2 0.4 0.6 0.8 1.0 1.2

V_F, INSTANTANEOUS FORWARD VOLTAGE (V)

Fig. 2 Typical Forward Characteristics (per element)

T_C, CASE TEMPERATURE (°C)

Fig. 1 Forward. Current Derating Curve

400

300

1000

Single Half-Sine Wave

(JEDEC Method)

f = 1 Mhz

T_j= 25°C

KBPC35

ꢀ

200

100

KBPC15, 25

100

T_j= 150°C

100

0.1

1.0

V_R, REVERSE VOLTAGE (V)

Fig. 4 Typical Junction Capacitance (per element)

100

NUMBER OF CYCLES AT 60 Hz

Fig. 3 Max Non-Repetitive Surge Current

100

T_j= 125°C

1.0

0.1

T_j= 25°C

0.01

100

120

140

PERCENT OF RATED PEAK REVERSE VOLTAGE (%)

Fig. 5 Typical Reverse Characteristics (per element)

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