MR851-T3 [SENSITRON]
Rectifier Diode, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2;型号: | MR851-T3 |
厂家: | SENSITRON |
描述: | Rectifier Diode, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2 |
文件: | 总3页 (文件大小:84K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SENSITRON
MR850-MR858
ꢀ
SEMICONDUCTOR
3.0A FAST RECOVERY RECTIFIER
Data Sheet 2728, Rev. -
Features
l
Glass Passivated Die Construction
l
l
l
l
l
Ideally Suited for Automatic Assembly
Low Forward Voltage Drop, High Efficiency
Low Power Loss
Fast Recovery Time
High Surge Current Capability
A
B
A
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
C
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
D
Mechanical Data
DO-201AD
Dim Min Max
Min
Max
l
l
Case: Molded Plastic
A
B
25.4
—
1.000
—
Terminals: Solder Plated, Solderable
per MIL-STD-750, Method 2026
Polarity: Cathode Band or Cathode Notch
Marking: Type Number
8.50 9.50 0.335 0.374
1.20 1.30 0.047 0.051
5.0 5.60 0.197 0.220
C
l
l
l
D
All
In mm
In inch
Mounting Position: Any
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
l
Weight: 0.21 grams (approx.)
ꢀ
ꢀ
ꢀ
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Characteristic
Symbol
MR850 MR851 MR852 MR854 MR856 MR858
Unit
ꢀ
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
50
35
100
70
200
140
400
280
600
420
800
560
V
RMS Reverse Voltage
VR(RMS)
IO
V
A
Average Rectified Output Current
@TL = 75°C
3.0
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
I FSM
150
A
Forward Voltage
@I F = 3.0A
VFM
1.25
100
1.30
150
V
Peak Reverse Current
At Rated DC Blocking Voltage
@TA = 25°C
@TA = 100°C
10
200
IRM
µA
Reverse Recovery Time (Note 1)
trr
Cj
nS
pF
°C
Typical Junction Capacitance (Note 2)
80
Operating and Storage Temperature Range
Tj, TSTG
-65 to +150
Note: 1. Measured with IF = 0.5A, IR = 1.0A, I = 0.25A,
rr
2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.
• 221 West Industry Court ! Deer Park, NY 11729-4681 ! (631) 586-7600 FAX (631) 242-9798 •
• World Wide Web Site - http://www.sensitron.com • E-Mail Address - sales@sensitron.com •
SENSITRON
MR850-MR858
3.0A FAST RECOVERY RECTIFIER
SEMICONDUCTOR
Data Sheet 2728, Rev. -
RATINGS AND CHARACTERISTIC CURVES (MR850-MR858)
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ꢀ ꢀ ꢀ ꢀFꢀIGꢀ .ꢀ1ꢀ- Mꢀ AXIMUM FORWARD CURRENT DERATING
CURVE
FIG.2- MAXIMUM NON-REPETITIVE PEAK SURGE
CURRENT
150
100
4
3
2
50
Single Phase
Half Wave 60Hz
Tj=250C
Resistive or
8.3ms Single Half Sine Wave
JEDEC Method
1
Inductive Load
0.375"(9.5mm)
Lead Length
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
10
0
1
5
10
50
100
0
25
50
75
100
125
150
175
AMBIENT TEMPERATURE. (oC)
ꢀ
NUMBER OF CYCLES AT 60Hz
ꢀ
FIG.3- TYPICAL FORWARD CHARACTERISTICS
FIG.4- TYPICAL JUNCTION CAPACITANCE
ꢀ
20
10
90
80
60
40
3.0
1.0
ꢀ
Tj=250C
20
0
0.3
0.1
Tj=25oC
Pulse Width=300
1% Duty Cycle
1
2
4
6
10
20
40
60
100
s
REVERSE VOLTAGE. (V)
.03
.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
FORWARD VOLTAGE. (V)
FIG.5- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50W
10W
trr
NONINDUCTIVE
NONINDUCTIVE
+0.5A
(-)
DUT
(+)
PULSE
GENERATOR
(NOTE 2)
0
50Vdc
(approx)
(-)
-0.25A
1W
OSCILLOSCOPE
(NOTE 1)
(+)
NON
INDUCTIVE
-1.0A
NOTES: 1. Rise Time=7ns max. Input Impedance=
1 megohm 22pf
1cm
SET TIME BASE FOR
5/ 10ns/ cm
2. Rise Time=10ns max. Sourse Impedance=
50 ohms
• 221 West Industry Court ! Deer Park, NY 11729-4681 ! (631) 586-7600 FAX (631) 242-9798 •
• World Wide Web Site - http://www.sensitron.com • E-Mail Address - sales@sensitron.com •
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version
of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment, and safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement.
3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during
operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual
property claims or any other problems that may result from applications of information, products or circuits described in the datasheets.
4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from
use at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of
Sensitron Semiconductor.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will
hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third
party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and
regulations.
• 221 West Industry Court ꢀ Deer Park, NY 11729-4681 ꢀ (631) 586-7600 FAX (631) 242-9798 •
• World Wide Web - http://www.sensitron.com • E-Mail Address - sales@sensitron.com •
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