SHD418301 [SENSITRON]
Power Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, HERMETIC SEALED, SHD-5, 3 PIN;
| 型号： | SHD418301 |
| 厂家： | 
SENSITRON |
| 描述： | Power Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, HERMETIC SEALED, SHD-5, 3 PIN 晶体管 |
| 文件： | 总3页 (文件大小：53K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SHD418301/A/B
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 940, REV. -
PNP BI-POLAR POWER TRANSISTOR
• Hermetic Package
• Electrically Equivalent to 2N3421
• Surface Mount Package
Absolute Maximum Ratings*
Symbol
TA = 25°C unless otherwise noted
Parameter
Value
80
Units
V
VCEO
VCBO
VEBO
IC
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
125
V
8.0
V
Collector Current – Continuous
3.0
A
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
°C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
TA = 25°C unless otherwise noted
Characteristic
Max
Units
PD
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
48
0.38
2.6
W
W/°C
°C/W
RθJC
Electrical Characteristics
Symbol Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Max
Units
OFF CHARACTERISTICS
VCEO
IEBO
Collector-Emitter Sustain Voltage IC = 50 mA, IB = 0
80
-
-
V
mA
Emitter-Base Cut-off Current
VEB = 6.0 Vdc
0.5
ICEX
Collector Cutoff Current
VEB = 0.5Vdc, VCE = 120Vdc
VEB = 0.5Vdc, VCE = 120Vdc,
TC = 150°C
-
0.3
µA
50
5.0
100
ICEO
ICBO
Emitter-Base Breakdown Voltage VCE = 60Vdc, IB = 0
Base Cut off Current VCE = 80 Vdc, IE = 0
-
-
mA
nA
•221 WEST INDUSTRY COURT • DEER PARK, NY 11729-4681 • PHONE (631) 586-7600 • FAX (631) 242-9798•
• World Wide Web Site - http://www.sensitron.com • E-Mail Address - sales@sensitron.com •
SHD418301/A/B
SENSITRON
DATA SHEET 940
REVISION -
Electrical Characteristics
Symbol Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Max
Units
ON CHARACTERISTICS*
hfe
DC Current Gain
IC = 100 mA, VCE = 2.0 Vdc
IC = 1.0 A, VCE = 2.0 Vdc
IC = 2.0 A, VCE = 2.0 Vdc
IC = 5.0 A, VCE = 5.0 Vdc
IC = 1.0 A, VCE = 2.0 Vdc,
TC = -55°C
40
40
30
15
10
120
VCE(sat)
VBE(sat)
Collector-Emitter Saturation
Voltage
Base-Emitter Voltage Saturation IC = 1.0 Adc, IB = 0.1 Adc
IC = 1.0 Adc, IB = 0.1 Adc
IC = 2.0 Adc, IB = 0.2 Adc
-
0.25
0.5
1.2
V
V
V
V
0.6
0.7
Voltage
IC = 2.0 Adc, IB = 0.2 Adc
1.4
SMALL SIGNAL CHARACTERISTICS
fT
Current Gain – Bandwidth
Product
IC = 100 mAdc, VCE = 10
Vdc, f = 20 MHz
VCB = 10 Vdc, IE = 0,
f = 100 kHz
26
-
160
150
0.3
MHz
pF
Cob
ton
toff
Common Base Output
Capacitance
Turn-on Time
IC = 1Adc,
-
µs
IB1 = -IB2 = 0.1 Adc
Turn-off Time
IC = 1Adc,
IB1 = -IB2 = 0.1 Adc
-
1.2
µs
*Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%
MECHANICAL DIMENSIONS: in Inches / mm
.520±.020
(13.2±.508)
.510±.020
(12.9±.508)
.370±.010
(9.40±.254)
.090±.010
(2.29±.254)
.370±.010
(9.40±.254)
.125±.010
(3.17±.254)
2
3
.030±.010
(.762±.254)
2
.370±.010
(9.40±.254)
.320±.010
(8.13 ±.254)
.030±.010
(.762±.254)
.610±.010
(15.5±.254)
.320±.010
(8.13±.254)
.610±.010
(15.5±.254)
.030±.010
(.762±.254)
2
3
3
.610±.010
(15.5 ±.254)
Copper Terminals
.130 (3.30) Max
.110 (2.79) Max
.020±.005 R
(.508±.127 )
Moly Lid
Moly Lid
.020±.005 R
(.508±.127 )
Alumina Ring
Alumina Ring
.110 (2.80) Max
Alumina Ring
.015±.002
(.381±.051)
Moly Base
Terminal 1
Moly Base
Terminal 1
.020±.002
(.508±.051)
.060±.010
(1.52±.254)
.060±.010
(1.52±.254)
Terminal 1
SHD-5
SHD-5A
SHD-5B
DEVICE TYPE
NPN BIPOLAR
PIN 1
COLLECTOR
PIN 2
EMITTER
PIN 3
BASE
POWER TRANSISTOR
•221 WEST INDUSTRY COURT • DEER PARK, NY 11729-4681 • PHONE (631) 586-7600 • FAX (631) 242-9798•
• World Wide Web Site - http://www.sensitron.com • E-Mail Address - sales@sensitron.com •
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version
of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment, and safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement.
3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during
operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual
property claims or any other problems that may result from applications of information, products or circuits described in the datasheets.
4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from
use at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of
Sensitron Semiconductor.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will
hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third
party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and
regulations.
• 221 West Industry Court ꢀ Deer Park, NY 11729-4681 ꢀ (631) 586-7600 FAX (631) 242-9798 •
• World Wide Web - http://www.sensitron.com • E-Mail Address - sales@sensitron.com •
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