SHD430203 [SENSITRON]

Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, PNP, Silicon, Ceramic, Metal-Sealed Cofired, 28 Pin, HERMETIC SEALED, CERAMIC, LCC-28;


型号：	SHD430203
厂家：	SENSITRON
描述：	Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, PNP, Silicon, Ceramic, Metal-Sealed Cofired, 28 Pin, HERMETIC SEALED, CERAMIC, LCC-28 晶体管
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中文：	中文翻译
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SHD430203

SENSITRON

SEMICONDUCTOR

TECHNICAL DATA

DATA SHEET 937, REV. A

Formerly part number SHD4303

PNP BI-POLAR POWER TRANSISTOR

• Hermetic, Ceramic Package

• Electrically Equivalent to 2N3741

• Surface Mount Package

Absolute Maximum Ratings*

Symbol

T_A= 25°C unless otherwise noted

Parameter

Value

Units

V_CEO

V_CBO

V_EBO

I_C

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current – Continuous

Base Current

7.0

4.0

I_B

2.0

T_J, T_stg

Operating and Storage Junction Temperature Range

-55 to +150

°C

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

Symbol

T_A= 25°C unless otherwise noted

Characteristic

Max

Units

P_D

Total Device Dissipation

Derate above 25°C

Thermal Resistance, Junction to Case

0.09

11.0

W/°C

°C/W

R_θJC

Electrical Characteristics

Symbol Parameter

T_A= 25°C unless otherwise noted

Test Conditions

Min Max

Units

OFF CHARACTERISTICS

V_CEO

I_EBO

I_CEX

Collector-Emitter Sustain Voltage

I_C= 100 mA, I_B= 0

V_EB= 7.0 Vdc

V_CE= 80Vdc, V_BE(OFF)

1.5Vdc

µA

Emitter-Base Cut-off Current

Collector Cutoff Current

0.5

100

V_CE= 60Vdc, V_BE(OFF)

1.0

1.5Vdc, T_C= 150°C

V_CE= 60Vdc, I_B= 0

V_CE= 80 Vdc, I_E= 0

I_CEO

I_CBO

Emitter-Base Breakdown Voltage

Base Cut off Current

1.0

100

µA

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SHD430203

SENSITRON

DATA SHEET 937, REVISION A

Electrical Characteristics

Symbol Parameter

T_A= 25°C unless otherwise noted

Test Conditions

Min Max

Units

ON CHARACTERISTICS*

h_fe

DC Current Gain

I_C= 100 mA, V_CE= 1.0 Vdc

I_C= 250 mA, V_CE= 1.0 Vdc

I_C= 500 mA, V_CE= 1.0 Vdc

I_C= 1.0 A, V_CE= 1.0 Vdc

I_C= 1.0Adc, I_B= 125 mAdc

100

V_CE(sat)

V_BE

Collector-Emitter Saturation

Voltage

Base-Emitter Voltage

0.6

1.0

I_C= 250mA, V_CE= 1.0 Vdc

TRANSIENT CHARACTERISTICS

f_T

Current Gain – Bandwidth

Product

I_C= 100 mA, V_CE= 10

Vdc, f = 1.0 MHz

V_CB= 10 Vdc, I_C= 0,

f = 100 kHz

I_C= 50mAdc, V_CE, =

10Vdc, f = 1.0 kHz

3.0

100

MHz

C_ob

h_fe

Common Base Output

Capacitance

Small-Signal Current Gain

*Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%

MECHANICAL DIMENSIONS: in Inches / mm

.011 (.279

.009 .228)

.040(1.02) x 45 ^o

Chamfer 3 Plcs

.050(1.27)Typ

.030(.762)Typ

.030Typ

(.762)

LCC-28T

.458 (11.7

.442 11.2)

.310 (7.88

.290 7.36)

.305 (7.75

.295 7.49)

.035(.889)Typ

.040(1.02) x 45 ^o

Chamfer 3 Plcs

Pin 1

Pin 26

.010(.254)Typ

.095(2.42)Max

DEVICE TYPE

PINS 1, 15 ~ 28

PINS 5 ~ 11

PINS 2, 3, 13, 14

PNP BIPOLAR

EMITTER

COLLECTOR

BASE

POWER TRANSISTOR

PINS 4 & 12 N/C

DISCLAIMER:

1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product

characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the

datasheet(s).

2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical

equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’

fail-safe precautions or other arrangement .

3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of

the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any

other problems that may result from applications of information, products or circuits described in the datasheets.

4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from use at

a value exceeding the absolute maximum rating.

5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor.

6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of Sensitron

Semiconductor.

7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder

maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When

exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations.

•221 WEST INDUSTRY COURT • DEER PARK, NY 11729-4681 • PHONE (631) 586-7600 • FAX (631) 242-9798•

• World Wide Web Site - http://www.sensitron.com • E-Mail Address - sales@sensitron.com •

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