SHD431002S [SENSITRON]

Small Signal Bipolar Transistor, 0.2A I(C), 12V V(BR)CEO, 1-Element, PNP, Silicon, HERMETIC SEALED, CERAMIC, LCC-3;


型号：	SHD431002S
厂家：	SENSITRON
描述：	Small Signal Bipolar Transistor, 0.2A I(C), 12V V(BR)CEO, 1-Element, PNP, Silicon, HERMETIC SEALED, CERAMIC, LCC-3 CD 晶体管
文件：	总3页 (文件大小：50K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SHD431002

SENSITRON

SEMICONDUCTOR

TECHNICAL DATA

DATA SHEET 646, REV. A

PNP SWITCHING TRANSISTOR

SHD431002S -- S-100 (JANTX) Screening

• Hermetic, Ceramic Package

• Electrically Equivalent to MMBT3640

• Surface Mount Package

Absolute Maximum Ratings*

T_A= 25°C unless otherwise noted

Symbol

Parameter

Value

Units

V_CEO

Collector-Emitter Voltage

4.0

°C

V_CBO

V_EBO

I_C

Collector-Base Voltage

Emitter-Base Voltage

Collector Current – Continuous

Operating and Storage Junction Temperature Range

200

-55 to +150

T_J, T_stg

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

Symbol Characteristic

T_A= 25°C unless otherwise noted

Max

Units

P_D

R_θJC

Total Device Dissipation

Derate above 25°C

Thermal Resistance, Junction to Case

650

5.23

191

mW/°C

°C/W

Electrical Characteristics

Symbol Parameter

T_A= 25°C unless otherwise noted

Test Conditions

Min Max

Units

OFF CHARACTERISTICS

V_(BR)CEO

V_(BR)CES

V_(BR)CBO

V_(BR)EBO

I_CES

Collector-Emitter Breakdown Voltage*

I_C= 10 mA, I_B= 0

I_C= 100 µA,V_BE= 0

I_C= 100 µA, I_E= 0

I_E= 100 µA, I_C= 0

V_CE=6.0V, V_BE= 0

V_CE=6.0V, V_BE= 0,T_A= 65°C

V_CE= 6.0 V, V_BE= 0

4.0

Collector-Emitter Breakdown Voltage

Collector-Base Breakdown Voltage*

Emitter-Base Breakdown Voltage*

Collector Cutoff Current

0.01

1.0

µA

I_B

Base Current

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SHD431002

SENSITRON

DATA SHEET 646

REVISION A

Electrical Characteristics

Symbol Parameter

T_A= 25°C unless otherwise noted

Test Conditions

Min Max

Units

ON CHARACTERISTICS*

h_FE

DC Current Gain

I_C= 10mA, V_CE= 0.3 V

I_C= 50mA, V_CE= 1.0 V

I_C= 10mA, I_B= 0.5 mA

I_C= 10mA, I_B= 1.0 mA

I_C= 50mA, I_B= 5.0 mA

I_C=10mA,I_B=1.0 mA,T_A=65°C

I_C= 10mA, I_B= 0.5 mA

I_C= 10mA, I_B= 1.0 mA

I_C= 50mA, I_B= 5.0 mA

120

V_CE(sat)

Collector-Emitter Saturation Voltage

0.3

0.2

0.6

0.25

0.95

1.0

V_BE(sat)

Base-Emitter Saturation Voltage

0.75

0.8

1.5

SMALL SIGNAL CHARACTERISTICS

f_T

Current Gain – Bandwidth Product

I_C= 10 mA, V_CE= 5.0 V,

f = 100 MHz

V_CB= 5.0 V, I_E= 0,

f = 1.0 MHz

V_BE= 0.5 V, I_C= 0,

f = 1.0 MHz

500

MHz

C_obo

C_ibo

Output Capacitance

3.5

Input Capacitance

SWITCHING CHARACTERISTICS

t_d

t_r

Delay Time

Rise Time

V_CC= 6.0 V, V_BE(off)= 1.9 V,

I_C= 50mA, I_B1= 5.0 mA

V_CC= 6.0 V, I_C= 50mA,

I_B1= I_B2= 5.0 mA

V_CC= 6.0 V, V_BE(off)= 1.9 V,

I_C= 50mA, I_B1= 5.0 mA

t_s

t_f

Storage Time

Fall Time

t_on

Turn-On Time

_CC= 1.5 V, I_C= 10mA,

I_B1= I_B2= 0.5 mA

t_off

Turn-Off Time

V_CC= 6.0 V, V_BE(off)= 1.9 V,

I_C= 50mA, I_B1= 5.0 mA

V_CC= 1.5 V, I_C= 10mA,

I_B1= I_B2= 0.5 mA

*Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%

MECHANICAL DIMENSIONS: in Inches / mm

.054 (1.370

.045 1.160)

.008(.20) R Typ

3 Places

.012(.30) R

.105 (2.68

.093 (2.37

.087 2.21)

.095 2.41)

.036 (.91

.024 .61)

.0125 Typ

(.318 )

.024 (.61

.016 .41)

.079 (2.01

.071 1.81)

.125 (3.18

.115 2.92)

LCC-3

DEVICE TYPE

PNP TRANSISTOR IN LCC-3P

CERAMIC PACKAGE

PIN 1

BASE

PIN 2

EMITTER

PIN 3

COLLECTOR

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SENSITRON

SEMICONDUCTOR

TECHNICAL DATA

DISCLAIMER:

1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product

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