SPM6G48-60 [SENSITRON]
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| 型号： | SPM6G48-60 |
| 厂家： | 
SENSITRON |
| 描述： | 暂无描述 |
| 文件： | 总8页 (文件大小：70K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SPMXGXX-XX
SENSITRON
SEMICONDUCTOR
STANDARD IGBT MODULES WITH GATE DRIVERS
FEATURES:
·
·
·
High Power Density
Low Saturation Voltage (VCE(SAT)
Low Thermal Resistance (RqJC
)
)
INDUSTRIAL IGBT PRODUCT MAP
IC (Amps)
CONFIG-
URATION
VECS (V)
25
50
100
Half-
Bridge
SPM2G48-60
SPM2G65-60
SPM2G75-60
SPM2G85-60
600
H-Bridge
SPM4G48-60
SPM6G48-60
-
600
600
3-Phase
Bridge
SPM6G65-60
SPM6G50-60(1)
(1) This device is available with opto-isolated digital interface inputs.
· 221 West Industry Court · Deer Park, NY 11729-4681 · Phone (631) 586-7600 · Fax (631) 242-9798 ·
· World Wide Web Site - http://www.sensitron.com · E-Mail Address - sales@sensitron.com ·
STANDARD HERMETIC IGBT MODULES WITH GATE DRIVERS
HIGH SPEED IGBT DEVICES WITH FAST REVERSE RECOVERY DIODES
IGBT CHARACTERISTICS
VCES
Continuous
Collector
Current
Continuous
Collector
Current
Pulsed
Collector
Current
TC=25Oc
1 ms
VCE(sat)@Ic
Fall
Time
tf
Maximum
PD@
TC=25oC
RqJC
PART
NUMBER
Package Style &
Schematic
IC
@
IC
@
Configuration
Option
Tc=90oC
TC=25oC
V
A
Volts
600
600
600
600
600
600
600
Amps
24
Amps
48
Amps
96
nsec
150
50
Watts
162
200
357
357
162
162
200
oC/W
0.77
0.55
0.35
0.35
0.77
0.77
0.55
Package Schematic
SPM2G48-60
SPM2G65-60
SPM2G75-60
SPM2G85-60
SPM4G48-60
SPM6G48-60
SPM6G65-60
2.5
24
Pkg-2
Pkg-2
Pkg-2
Pkg-2
Pkg-2
Pkg-4
Pkg-4
Opt-1
Opt-1
Opt-1
Opt-1
Opt-2
Opt-3
Opt-3
35
50
75
24
24
35
65
75
85
48
48
65
130
200
200
96
96
130
2.1
2.5
2.0
2.5
2.7
2.1
50
50
70
24
24
50
200
50
150
275
50
REVERSE DIODE CHARACTERISTICS
Current
Rating
IFavM @ D=0.5,
VF
@
IF
IRM@ IF
typ
TJ=25oC
VR=100V
trr @ -di/dt
Thermal
Resistance
RqJC
PART
NUMBER
TJ=25oC
typ
Tc
TJ=25oC
Amps
oC
Volts
Amps
Amps Amps
ns
A/ms
oC/W
SPM2G48-60
SPM4G48-60
SPM6G48-60
SPM2G65-60
SPM2G75-60
SPM2G85-60
SPM6G65-60
30
90
1.55
1.35
30
10
15
40
50
50
95
100
0.95
50
90
50
100
0.75
GATE DRIVER CHARACTERISTICS
Characteristic
Symbol
Min.
Typ Max.
.
Unit
Logic DC Supply
VCC
10
18
20
V
Under Voltage Lockout
VCCUV
7
9.7
V
V
Logic Input Voltage (HIN & LIN)
HIN, LIN, SD
-0.3
-
VCC+0.3
Notes:
1- Bold part numbers indicate preferred devices.
2- For devices with custom ratings, please contact the factory or a Sensitron Sales Representative for details.
· 221 West Industry Court · Deer Park, NY 11729-4681 · Phone (631) 586-7600 · Fax (631) 242-9798 ·
· World Wide Web Site - http://www.sensitron.com · E-Mail Address - sales@sensitron.com ·
SCHEMATIC DIAGRAMS FOR IGBT MODULES WITH GATE DRIVERS
+V
Pin Assignment
for Pkg-2
Pin Assignment
for Pkg-3
Function
VCC
Pin #
2
3
4
5
Function
VCC
Pin #
4
5
6
7
8
16,17,18
13,14,15
VCC
10mF
Boot
Strap
HIN1
SD1
LIN1
Com
+V
HIN1
SD1
LIN1
Com
+V
HIN
SD
LIN
Output
Gate
6
Com
11,12
9,10
7,8
Out
Out
COM
COM
CO
M
(a) Half-Bridge IGBT Module
(Option-1)
Pin Assignment
for Pkg-2
Function
+V
Pin #
VCC
HIN1
LIN1
HIN2
LIN2
Com
+V
1
2
3
4
5
VCC
10mF
Boot
Strap
Out 1
Out 2
HIN1
LIN1
HIN2
LIN2
Com
Gate
Drive
6
12
10, 11
8, 9
7
Out1
Out2
COM
COM
(a) H-Bridge IGBT Module
(Option-2)
Pin Assignment
for Pkg-4
Function
VCC
Pin #
1
Boot Strap
+V
VCC
10mF
HIN1
SD1
LIN1
Com
HIN2
SD2
LIN2
Com
HIN3
HIN1
SD1
LIN1
Com
HIN2
SD2
LIN2
Com
HIN3
SD3
LIN3
Com
+V
2
3
4
5
6
7
8
9
10
11
12
13
Phase A
Phase B
Phase C
Gat
e
SD3
LIN3
Com
COM
24,25,26
22,23
19,20
17,18
PhA
(b) Three-Phase Bridge IGBT
PhB
· 221 West Industry Court · Deer PaMrk,oNdYu1le17(2O9-4p6t8io1n·-P3h)one (631) 586-7600 · Fax (63
PhC
· World Wide Web Site - http://www.sensitron.com · E-Mail Address - sales@sensitron.com ·
PACKAGE OPTIONS FOR IGBT & MOSFET
MODULES WITH GATE DRIVERS
1.530(38.86
1.51038.35)
1.020(25.91
0.98024.89)
1.350
0.155
(3.94)
(34.29)
.750
(19.05)
0.195(4.95
0.1804.57)
0.045(1.14
0.160(4.06
0.1403.56)
.500 (12.70)
Min.
.125
0.0350.89)
(3.18)
12
11 10
9
8 7
0.161(4.09
12 1110
9
4
8
5
7
6
Dia
0.1513.84)
1.050
1.020(25.91
0.98024.89)
(26.67)
1.300
0.175(4.44
(33.02)
R
0.1654.19)
1
2 3
1
2
3
4
5 6
0.135(3.43
0.1152.92)
0.250 Min
(6.35)
0.635(16.13
0.61515.62)
0.060
(1.52) Dia.
.150(3.81)
1.600
.125(3.18)
(40.64)
1.850
(46.99)
0.280(7.11
0.2406.10)
0.055(1.40
0.0451.14)
0.260
(6.60)
0.050
(1.27)
(a) Package-1
(Pkg-1)
(b) Package-2
(Pkg-2)
0.200
0.375”
3.00”
2.75”
0.215”
0.080”
0.375”
0.215”
0.080”
2.25”
2.00”
0.200
f
0.130”
0.123”
26 25 24 23 22 21 20 19 18 17 16 15 14
f
0.130”
0.123
18 17 16 15 14 13 12 11 10
2.10” 1.86” 1.60”
2.10” 1.86” .60”
1
2
3
4
5
6
7
8
9 10 11 12 13
1
2 3 4 5 6 7 8 9
f 0.050”
with glass
bead f
f 0.050”
with glass
bead f
0.110”
0.110”
(c) Package-1
(Pkg-3)
(d) Package-2
(Pkg-4)
· 221 West Industry Court · Deer Park, NY 11729-4681 · Phone (631) 586-7600 · Fax (631) 242-9798 ·
· World Wide Web Site - http://www.sensitron.com · E-Mail Address - sales@sensitron.com ·
SPM6G50-60
tSENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 687, REV. -
Three-Phase IGBT Bridge
600 VOLT, 50 Amp
ELECTRICAL CHARACTERISTICS PER IGBT DEVICE (Tj=250C UNLESS OTHERWISE SPECIFIED)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
IGBT SPECIFICATIONS
Collector to Emitter Breakdown Voltage
IC = 250 mA, VGE = 0V
BVCES
600
-
-
V
A
A
Continuous Collector Current
TC = 25 OC
TC = 90 OC
50
40
IC
-
Pulsed Collector Current, 1mS
ICM
tsc
130
Short Circuit time, VGE = 15V, VCE = 500V, T = 125 OC
j
10
?sec
di/dt < 300 A/?sec, IC< 300A
Gate to Emitter Voltage
VGE
-
-
+/-20
+/- 100
7.0
V
nA
V
Gate-Emitter Leakage Current , VGE = +/-20V
IGES
Gate Threshold Voltage, IC=2mA
Zero Gate Voltage Collector Current
V GE(TH)
ICES
4.0
-
-
VCE = 600 V, VGE=0V T=25oC
i
1.0
3.0
mA
mA
VCE = 480 V, VGE=0V T=125oC
i
Collector to Emitter Saturation Voltage,
IC = 50A, VGE = 15V,
TC = 25 OC
TC = 125 OC
VCE(SAT)
-
2.1
2.4
2.5
2.8
V
Input Capacitance
Output Capacitance
Reverse Transfer Cap.
Cies
Coes
Cres
2800
300
200
pF
VCE = 25 V, VGE = 0 V, f = 1 MHz
Turn On Delay Time
Rise Time
Turn Off Delay Time
Fall Time
td(on)
tr
td(off)
tf
-
-
-
-
-
100
50
300
40
-
-
-
-
-
nsec
Turn off Energy Loss
Eoff
1.5
mJ
mJ
(T = 125 OC, IC = 40A, VGE = 15V, inductive load, VCC = 300
Eon
2.0
-
j
V, RG = 22 W
Maximum Thermal Resistance
-
-
0.7
oC/W
RqJC
· 221 West Industry Court · Deer Park, NY 11729-4681 · Phone (631) 586-7600 · Fax (631) 242-9798 ·
· World Wide Web Site - http://www.sensitron.com · E-Mail Address - sales@sensitron.com ·
SPM6G50-60
ULTRAFAST DIODES RATING AND CHARACTERISTICS
PARAMETER
SYMBOL
MIN
600
TYP
MAX
UNIT
Diode Peak Inverse Voltage
Continuous Forward Current, TC = 90 OC
PIV
IF
-
V
50
A
A
Forward Surge Current, tp = 10 msec
IFSM
VF
trr
400
1.7
200
2.5
Diode Forward Voltage,
IF = 50A
-
-
1.2
V
Diode Reverse Recovery Time
150
1.5
nsec
? C
Diode Reverse Recovery Charge
(IF=25A, VRR=300V , di/dt=500 A/ms)
Qrr
Maximum Thermal Resistance
-
-
-
1.0
oC/W
oC
RqJC
Maximum and Storage Junction Temperature
T
jmax
-55
150
Gate Driver
PARAMETER
SYMBOL
VCC
HIN, LIN
BVin
MIN
TYP
MAX
20
UNIT
Supply Voltage
Input On Current
10
1.6
5.0
-
15
V
mA
V
-
5.0
-
Input Reverse Breakdown Voltage
-
Input Forward Voltage @ I = 5mA
in
VF
1.5
1.7
9.7
0.58
TBD
TBD
TBD
TBD
-
V
Under Voltage Lockout
VCCUV
ITRIPth
tond
7.0
0.4
-
-
V
(1)
ITRIP Threshold Voltage
0.49
V
Turn On Delay
-
-
-
-
-
nsec
nsec
nsec
nsec
V
Turn On Rise Time
Turn Off Delay
tr
-
toffd
-
Turn Off Fall Time
-
tf
Input-Output Isolation Voltage
1000
(1)
Once ITRIP reaches threshold, the driver latches off. This condition can be reset by holding all three low-side inputs
high for more than 10 m sec or by recycling the Vcc supply.
Gate Driver Truth Table
LIN1,2,3
HIN1,2,3
HO1,2,3
LO1,2,3
0
0
0
1
0
1
0
1
0
0
0
0
1
0
1
1
· 221 West Industry Court · Deer Park, NY 11729-4681 · Phone (631) 586-7600 · Fax (631) 242-9798 ·
· World Wide Web Site - http://www.sensitron.com · E-Mail Address - sales@sensitron.com ·
SPM6G50-60
Schematic Diagram:
+V
·
·
·
+15V Pin1
1.5mF
D1
VCC
5W
·
·
Q1H
1.5mF
200KW
5W
HIN1, Pin15
LIN1, Pin7
HIN1
LIN1
Ph1
·
D2
·
5W
Q1L
30KW
0.47mF
·
Gate
SGN-GND
Pin,8
·
3.0mF
Driver
·
·
1.5mF
D3
5W
Q2H
5W
HIN2
LIN2
0.47mF
HIN2, Pin14
LIN2, Pin6
·
Ph2
D4
Q2L
5W
·
30KW
·
·
D5
1.5mF
·
SGN-GND
Pin,4
3.0mF
·
·
·
Q3H
5W
HIN
3
200KW
5W
HIN3, Pin13
·
·
Ph3
D6
Q3L
0.47mF
5W
Ceramic Cap
0.20mF, 600V
LIN3
ITRIP
LIN3, Pin5
30KW
·
VSS VSO
·
·
·
·
·
PWR-GRND, Pin2
COM
40W
ITRIP, Pin10
Input Reson:
Recommended Input Resistance
0.01mF
·
Recomfor Rin is 1KW
ITRIP, Pin9
Rin
kW
Iin
mA
RTN
2.15
1.1
0.68
1.6
3
5
HIN1,2,3
LIN1,2,3
Rin
· 221 West Industry Court · Deer Park, NY 11729-4681 · Phone (631) 586-7600 · Fax (631) 242-9798 ·
· World Wide Web Site - http://www.sensitron.com · E-Mail Address - sales@sensitron.com ·
SPM6G50-60
Package Drawing:
PowerPins
Copper Base
0.80
Copper Base
0.11
0.23
+V
f = 0.2
1.5
Ph3
Ph1
Ph2
0.50
0.53
0.80
Com
0.25
0.75
0.42
0.20
2.60
3.62
Signal Terminals Microminiature D Connector:
Signal Pins
Pin #
1
2
Function
+15V
Pins: f = 0.02, 0.05 center-to-center
PWR-
GRND
3
4
NC
SGN-
GRND
1
2
3
4
5
6
7
8
5
6
7
8
LIN3
LIN2
LIN1
SGN-
GRND
9
10 11
12 13
14
15
9
ITRIP-
RTN
10
11
12
13
14
15
ITRIP
NC
NC
HIN3
HIN2
HIN1
· 221 West Industry Court · Deer Park, NY 11729-4681 · Phone (631) 586-7600 · Fax (631) 242-9798 ·
· World Wide Web Site - http://www.sensitron.com · E-Mail Address - sales@sensitron.com ·
相关型号：
SPM6M020-060D
Three-Phase MOSFET BRIDGE With Gate Driver and Optical Isolation 600 VOLT 20 AMP
SENSITRON
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