SGM13002A [SGMICRO]

Low Noise Amplifier for GNSS;
SGM13002A
型号: SGM13002A
厂家: Shengbang Microelectronics Co, Ltd    Shengbang Microelectronics Co, Ltd
描述:

Low Noise Amplifier for GNSS

文件: 总10页 (文件大小:676K)
中文:  中文翻译
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SGM13002A  
Low Noise Amplifier for GNSS  
GENERAL DESCRIPTION  
FEATURES  
The SGM13002A is a low noise amplifier (LNA) for  
GLONASS Galileo, Beidou and GPS applications. The  
device delivers 17.4dB gain at an extremely low noise  
figure of 0.78dB. It also features high gain and excellent  
linearity performance that operates from 1160MHz to  
1300MHz and 1550MHz to 1615MHz.  
High Gain:  
17.8dB at 1176.45MHz  
18.0dB at 1227.60MHz  
17.4dB at 1575.42MHz  
Low Noise Figure:  
0.71dB at 1176.45MHz  
0.70dB at 1227.60MHz  
The device requires 5.2mA from a single 1.5V to 3.6V  
0.78dB at 1575.42MHz  
supply, dropping to below 1μA in power down mode.  
Low Operation Current: 5.2mA  
Current Less than 1μA in Power Down Mode  
Operating Frequency Range:  
1160MHz to 1300MHz  
No external DC blocking capacitors are required on the  
RF paths as long as no external DC voltage is applied,  
which can save PCB area and cost.  
1550MHz to 1615MHz  
The SGM13002A is available in a Green UTDFN-  
1.1×0.7-6L package.  
Single Supply Voltage Range: 1.5V to 3.6V  
Low Cost BOM  
Lead-Free and RoHS Compliant  
Available in a Green UTDFN-1.1×0.7-6L Package  
APPLICATIONS  
GPS Chip Module  
BLOCK DIAGRAM  
Personal Navigation Device (PND)  
Cell Phone with GPS  
VDD  
MID/PAD with GPS  
EN  
Bias  
GND  
RFIN  
RFOUT  
Figure 1. SGM13002A Block Diagram  
SG Micro Corp  
MAY 2023 – REV.A  
www.sg-micro.com  
SGM13002A  
Low Noise Amplifier for GNSS  
PACKAGE/ORDERING INFORMATION  
SPECIFIED  
TEMPERATURE  
RANGE  
PACKAGE  
DESCRIPTION  
ORDERING  
NUMBER  
PACKAGE  
MARKING  
PACKING  
OPTION  
MODEL  
SGM13002A UTDFN-1.1×0.7-6L  
SGM13002AYUEC6G/TR  
6H  
Tape and Reel, 10000  
-40to +85℃  
MARKING INFORMATION  
NOTE: Fixed character for 6H.  
YY  
Serial Number  
Green (RoHS & HSF): SG Micro Corp defines "Green" to mean Pb-Free (RoHS compatible) and free of halogen substances. If  
you have additional comments or questions, please contact your SGMICRO representative directly.  
OVERSTRESS CAUTION  
ABSOLUTE MAXIMUM RATINGS  
Stresses beyond those listed in Absolute Maximum Ratings  
may cause permanent damage to the device. Exposure to  
absolute maximum rating conditions for extended periods  
may affect reliability. Functional operation of the device at any  
conditions beyond those indicated in the Recommended  
Operating Conditions section is not implied.  
Supply Voltage, VDD.......................................... -0.3V to 4.0V  
EN to GND........................................................ -0.3V to 4.0V  
RFIN, RFOUT to GND ...................................... -0.3V to 0.3V  
RF Input Power, PIN ....................................................10dBm  
Junction Temperature.................................................+150℃  
Storage Temperature Range.......................-55to +150℃  
Lead Temperature (Soldering, 10s)............................+260℃  
ESD Susceptibility  
ESD SENSITIVITY CAUTION  
HBM.............................................................................1500V  
CDM ............................................................................2000V  
This integrated circuit can be damaged if ESD protections are  
not considered carefully. SGMICRO recommends that all  
integrated circuits be handled with appropriate precautions.  
Failureto observe proper handlingand installation procedures  
can cause damage. ESD damage can range from subtle  
performance degradation tocomplete device failure. Precision  
integrated circuits may be more susceptible to damage  
because even small parametric changes could cause the  
device not to meet the published specifications.  
RECOMMENDED OPERATING CONDITIONS  
Operating Temperature Range......................-40to +85℃  
Supply Voltage, VDD............................................1.5V to 3.6V  
Operating Frequency Range,  
f0.......................................................1160MHz to 1300MHz  
f0’......................................................1550MHz to 1615MHz  
Control Voltage High, VCTL_H.............................. 1.35V to VDD  
Control Voltage Low, VCTL_L.................................0V to 0.45V  
DISCLAIMER  
SG Micro Corp reserves the right to make any change in  
circuit design, or specifications without prior notice.  
SG Micro Corp  
www.sg-micro.com  
MAY 2023  
2
SGM13002A  
Low Noise Amplifier for GNSS  
PIN CONFIGURATION  
(TOP VIEW)  
1
GND  
6
EN  
2
VDD  
5
RFIN  
3
4
GND  
RFOUT  
UTDFN-1.1×0.7-6L  
PIN DESCRIPTION  
PIN  
1, 4  
2
NAME  
GND  
VDD  
FUNCTION  
Ground.  
Power Supply.  
3
RFOUT LNA Output.  
5
RFIN  
EN  
LNA Input from Antenna.  
Active High Enable Input for the Device. Pull high enable, pull low into power down mode.  
6
SG Micro Corp  
www.sg-micro.com  
MAY 2023  
3
SGM13002A  
Low Noise Amplifier for GNSS  
ELECTRICAL CHARACTERISTICS  
(VDD = 1.5V to 3.6V, TA = -40to +85, f0 = 1160MHz to 1300MHz, typical values are at VDD = 2.8V, TA = +25, f0 = 1176.45MHz,  
unless otherwise noted.)  
PARAMETER  
SYMBOL  
CONDITIONS  
MIN  
TYP  
MAX UNITS  
DC Characteristics  
Supply Voltage  
Supply Current  
VDD  
IVDD  
1.5  
3.6  
9.5  
1
V
EN = High  
EN = Low  
High  
5.2  
0.01  
1.8  
0
mA  
μA  
ISD  
0
1.35  
0
VCTL_H  
VCTL_L  
VDD  
0.45  
Control Voltage  
V
Low  
RF Characteristics  
RF Frequency Range  
Power Gain  
f0  
S21  
NF  
None  
1160 1176.45 1300  
MHz  
dB  
17.8  
0.71  
-6.9  
Noise Figure  
dB  
Input Return Loss  
Output Return Loss  
Reverse Isolation  
Stability  
S11  
S22  
S12  
Kf  
dB  
-6.2  
dB  
-31.5  
dB  
Frequency range from 0.5GHz to 5GHz  
1176.45MHz  
1
Input Power 1dB Compression Point  
Input In-Band IP3  
Turn-On Time  
P1dB  
IIP3_inb  
tON  
-11.7  
-6.0  
dBm  
dBm  
μs  
f1 = 1175.45MHz, f2 = 1176.45MHz, -30dBm  
Time from EN on to 90% of the gain  
Time from EN off to 10% of the gain  
1.7  
Turn-Off Time  
tOFF  
117  
ns  
(VDD = 1.5V to 3.6V, TA = -40to +85, f0 = 1160MHz to 1300MHz, typical values are at VDD = 1.8V, TA = +25, f0 = 1176.45MHz,  
unless otherwise noted.)  
PARAMETER  
SYMBOL  
CONDITIONS  
MIN  
TYP  
MAX UNITS  
DC Characteristics  
Supply Voltage  
Supply Current  
VDD  
IVDD  
1.5  
3.6  
9.5  
1
V
EN = High  
EN = Low  
High  
5.2  
0.01  
1.8  
0
mA  
μA  
ISD  
0
1.35  
0
VCTL_H  
VCTL_L  
VDD  
0.45  
Control Voltage  
V
Low  
RF Characteristics  
RF Frequency Range  
Power Gain  
f0  
S21  
NF  
None  
1160 1176.45 1300  
MHz  
dB  
17.8  
0.73  
-6.8  
Noise Figure  
dB  
Input Return Loss  
Output Return Loss  
Reverse Isolation  
Stability  
S11  
S22  
S12  
Kf  
dB  
-6.7  
dB  
-30.8  
dB  
Frequency range from 0.5GHz to 5GHz  
1176.45MHz  
1
Input Power 1dB Compression Point  
Input In-Band IP3  
Turn-On Time  
P1dB  
IIP3_inb  
tON  
-13.4  
-5.9  
dBm  
dBm  
μs  
f1 = 1175.45MHz, f2 = 1176.45MHz, -30dBm  
Time from EN on to 90% of the gain  
Time from EN off to 10% of the gain  
2.0  
Turn-Off Time  
tOFF  
148  
ns  
SG Micro Corp  
www.sg-micro.com  
MAY 2023  
4
SGM13002A  
Low Noise Amplifier for GNSS  
ELECTRICAL CHARACTERISTICS (continued)  
(VDD = 1.5V to 3.6V, TA = -40to +85, f0 = 1160MHz to 1300MHz, typical values are at VDD = 2.8V, TA = +25, f0 = 1227.60MHz,  
unless otherwise noted.)  
PARAMETER  
SYMBOL  
CONDITIONS  
MIN  
TYP  
MAX UNITS  
DC Characteristics  
Supply Voltage  
Supply Current  
VDD  
IVDD  
1.5  
3.6  
9.5  
1
V
EN = High  
EN = Low  
High  
5.2  
0.01  
1.8  
0
mA  
μA  
ISD  
0
1.35  
0
VCTL_H  
VCTL_L  
VDD  
0.45  
Control Voltage  
V
Low  
RF Characteristics  
RF Frequency Range  
Power Gain  
f0  
S21  
NF  
None  
1160 1227.60 1300  
MHz  
dB  
18.0  
0.70  
-7.1  
Noise Figure  
dB  
Input Return Loss  
Output Return Loss  
Reverse Isolation  
Stability  
S11  
S22  
S12  
Kf  
dB  
-8.0  
dB  
-30.9  
dB  
Frequency range from 0.5GHz to 5GHz  
1227.60MHz  
1
Input Power 1dB Compression Point  
Input In-Band IP3  
Turn-On Time  
P1dB  
IIP3_inb  
tON  
-10.6  
-5.1  
dBm  
dBm  
μs  
f1 = 1226.60MHz, f2 = 1227.60MHz, -30dBm  
Time from EN on to 90% of the gain  
Time from EN off to 10% of the gain  
1.7  
Turn-Off Time  
tOFF  
118  
ns  
(VDD = 1.5V to 3.6V, TA = -40to +85, f0 = 1160MHz to 1300MHz, typical values are at VDD = 1.8V, TA = +25, f0 = 1227.60MHz,  
unless otherwise noted.)  
PARAMETER  
SYMBOL  
CONDITIONS  
MIN  
TYP  
MAX UNITS  
DC Characteristics  
Supply Voltage  
Supply Current  
VDD  
IVDD  
1.5  
3.6  
9.5  
1
V
EN = High  
EN = Low  
High  
5.2  
0.01  
1.8  
0
mA  
μA  
ISD  
0
1.35  
0
VCTL_H  
VCTL_L  
VDD  
0.45  
Control Voltage  
V
Low  
RF Characteristics  
RF Frequency Range  
Power Gain  
f0  
S21  
NF  
None  
1160 1227.60 1300  
MHz  
dB  
18.0  
0.70  
-7.0  
Noise Figure  
dB  
Input Return Loss  
Output Return Loss  
Reverse Isolation  
Stability  
S11  
S22  
S12  
Kf  
dB  
-8.6  
dB  
-30.5  
dB  
Frequency range from 0.5GHz to 5GHz  
1227.60MHz  
1
Input Power 1dB Compression Point  
Input In-Band IP3  
Turn-On Time  
P1dB  
IIP3_inb  
tON  
-12.8  
-5.0  
dBm  
dBm  
μs  
f1 = 1226.60MHz, f2 = 1227.60MHz, -30dBm  
Time from EN on to 90% of the gain  
Time from EN off to 10% of the gain  
1.8  
Turn-Off Time  
tOFF  
140  
ns  
SG Micro Corp  
www.sg-micro.com  
MAY 2023  
5
SGM13002A  
Low Noise Amplifier for GNSS  
ELECTRICAL CHARACTERISTICS (continued)  
(VDD = 1.5V to 3.6V, TA = -40to +85, f0’ = 1550MHz to 1615MHz, typical values are at VDD = 2.8V, TA = +25, f0’ = 1575.42MHz,  
unless otherwise noted.)  
PARAMETER  
SYMBOL  
CONDITIONS  
MIN  
TYP  
MAX UNITS  
DC Characteristics  
Supply Voltage  
Supply Current  
VDD  
IVDD  
1.5  
3.6  
9.5  
1
V
EN = High  
EN = Low  
High  
5.2  
0.01  
1.8  
0
mA  
μA  
ISD  
0
1.35  
0
VCTL_H  
VCTL_L  
VDD  
0.45  
Control Voltage  
V
Low  
RF Characteristics  
RF Frequency Range  
Power Gain  
f0’  
S21  
NF  
None  
1550 1575.42 1615  
MHz  
dB  
15.8  
17.4  
0.78  
-9.3  
Noise Figure  
dB  
Input Return Loss  
Output Return Loss  
Reverse Isolation  
Stability  
S11  
S22  
S12  
Kf  
dB  
-9.5  
dB  
-30.1  
dB  
Frequency range from 0.5GHz to 5GHz  
1575.42MHz  
1
Input Power 1dB Compression Point  
Input In-Band IP3  
Turn-On Time  
P1dB  
IIP3_inb  
tON  
-7.8  
-1.6  
1.6  
dBm  
dBm  
μs  
f1 = 1574.42MHz, f2 = 1575.42MHz, -30dBm  
Time from EN on to 90% of the gain  
Time from EN off to 10% of the gain  
3.3  
Turn-Off Time  
tOFF  
130  
500  
ns  
(VDD = 1.5V to 3.6V, TA = -40to +85, f0’ = 1550MHz to 1615MHz, typical values are at VDD = 1.8V, TA = +25, f0’ = 1575.42MHz,  
unless otherwise noted.)  
PARAMETER  
SYMBOL  
CONDITIONS  
MIN  
TYP  
MAX UNITS  
DC Characteristics  
Supply Voltage  
Supply Current  
VDD  
IVDD  
1.5  
3.6  
9.5  
1
V
EN = High  
EN = Low  
High  
5.2  
0.01  
1.8  
0
mA  
μA  
ISD  
0
1.35  
0
VCTL_H  
VCTL_L  
VDD  
0.45  
Control Voltage  
V
Low  
RF Characteristics  
RF Frequency Range  
Power Gain  
f0’  
S21  
NF  
None  
1550 1575.42 1615  
MHz  
dB  
15.6  
17.2  
0.79  
-9.4  
Noise Figure  
dB  
Input Return Loss  
Output Return Loss  
Reverse Isolation  
Stability  
S11  
S22  
S12  
Kf  
dB  
-9.6  
dB  
-29.9  
dB  
Frequency range from 0.5GHz to 5GHz  
1575.42MHz  
1
Input Power 1dB Compression Point  
Input In-Band IP3  
Turn-On Time  
P1dB  
IIP3_inb  
tON  
-10.1  
-1.6  
1.6  
dBm  
dBm  
μs  
f1 = 1574.42MHz, f2 = 1575.42MHz, -30dBm  
Time from EN on to 90% of the gain  
Time from EN off to 10% of the gain  
3.3  
Turn-Off Time  
tOFF  
149  
500  
ns  
SG Micro Corp  
www.sg-micro.com  
MAY 2023  
6
SGM13002A  
Low Noise Amplifier for GNSS  
TYPICAL APPLICATION CIRCUIT  
R1  
(Optional)  
Supply Voltage  
VDD  
RFOUT  
LNA Output  
C1  
(Optional)  
SGM13002A  
Enable  
EN  
L1  
RFIN  
LNA Input  
GND  
Figure 2. SGM13002A Typical Application Circuit  
Table 1. SGM13002A Function Table  
Component  
Matching Band  
Vendor  
Murata  
Murata  
Type  
Part Number & Value  
LQW15AN20N, 20nH  
LQW15AN10N, 10nH  
L1  
L1  
1160MHz to 1300MHz  
1550MHz to 1615MHz  
Wired inductor, high Q  
Wired inductor, high Q  
EVALUATION BOARD LAYOUT  
Figure 3. SGM13002A Evaluation Board Layout  
REVISION HISTORY  
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.  
Changes from Original (MAY 2023) to REV.A  
Page  
Changed from product preview to production data.............................................................................................................................................All  
SG Micro Corp  
www.sg-micro.com  
MAY 2023  
7
PACKAGE INFORMATION  
PACKAGE OUTLINE DIMENSIONS  
UTDFN-1.1×0.7-6L  
D
N6  
Φ
b
E
e1  
N1  
H
PIN 1#  
e
H
TOP VIEW  
BOTTOM VIEW  
Φ
0.20  
0.40  
A
A1  
0.40  
A2  
SIDE VIEW  
RECOMMENDED LAND PATTERN (Unit: mm)  
Dimensions In Millimeters  
Symbol  
MIN  
MOD  
0.450  
MAX  
0.500  
0.050  
A
A1  
A2  
D
0.400  
0.000  
0.020  
0.152 REF  
1.100  
1.050  
0.650  
0.150  
0.300  
0.300  
1.150  
0.750  
0.250  
0.500  
0.500  
E
0.700  
b
0.200  
e
0.400  
e1  
H
0.400  
0.100 REF  
NOTE: This drawing is subject to change without notice.  
SG Micro Corp  
TX00199.000  
www.sg-micro.com  
PACKAGE INFORMATION  
TAPE AND REEL INFORMATION  
REEL DIMENSIONS  
TAPE DIMENSIONS  
P2  
P0  
W
Q2  
Q4  
Q2  
Q4  
Q2  
Q4  
Q1  
Q3  
Q1  
Q3  
Q1  
Q3  
B0  
Reel Diameter  
P1  
A0  
K0  
Reel Width (W1)  
DIRECTION OF FEED  
NOTE: The picture is only for reference. Please make the object as the standard.  
KEY PARAMETER LIST OF TAPE AND REEL  
Reel Width  
Reel  
Diameter  
A0  
B0  
K0  
P0  
P1  
P2  
W
Pin1  
Package Type  
W1  
(mm)  
(mm) (mm) (mm) (mm) (mm) (mm) (mm) Quadrant  
UTDFN-1.1×0.7-6L  
7″  
9.5  
0.80  
1.20  
0.55  
4.0  
2.0  
2.0  
8.0  
Q1  
SG Micro Corp  
TX10000.000  
www.sg-micro.com  
PACKAGE INFORMATION  
CARTON BOX DIMENSIONS  
NOTE: The picture is only for reference. Please make the object as the standard.  
KEY PARAMETER LIST OF CARTON BOX  
Length  
(mm)  
Width  
(mm)  
Height  
(mm)  
Reel Type  
Pizza/Carton  
7″ (Option)  
7″  
368  
442  
227  
410  
224  
224  
8
18  
SG Micro Corp  
www.sg-micro.com  
TX20000.000  

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