SGM25701 [SGMICRO]
Positive High-Voltage Hot Swap and Inrush Current Controller with Power-Limiting;
| 型号： | SGM25701 |
| 厂家： | 
Shengbang Microelectronics Co, Ltd |
| 描述： | Positive High-Voltage Hot Swap and Inrush Current Controller with Power-Limiting |
| 文件： | 总25页 (文件大小：1684K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SGM25701
Positive High-Voltage Hot Swap and Inrush
Current Controller with Power-Limiting
GENERAL DESCRIPTION
FEATURES
The SGM25701 is a positive hot swap controller that
allows a board to be safely inserted or removed from a
live backplane. Inrush current control function can
effectively reduce the voltage drop on the power supply
rail.
● Wide Input Voltage Range: 9V to 70V
● Inrush Current Limit, PCB can be Safely Inserted
into Live Equipment
● External Device Programming Maximum Loss
Limit
● Programmable Current Limit
The SGM25701 offers programmable power-limiting
and current limit to ensure that the external MOSFET
operates within its safe operating area (SOA) at all
times.
● Adjustable Under-Voltage Lockout (EN/UVLO)
● Adjustable Over-Voltage Lockout (OVLO)
● Open-Drain for Good Output Indication
● Quick Cut-Off Function when Severe
Over-Current Occurs
The chip has a good output indication function when
the VOUT increases to within the 1.4V range of the VIN.
● Configure Charge Pump/Gate Driver for External
N-MOSFET
Programmable under-voltage lockout or over-voltage
lockout is used to turn off the device if the VIN drops
below or raises over a threshold value. The fault
detection time and initial insertion delay time can also
be adjusted by the user.
● The Setting of the Insertion Time Allowing the
Ringing and Transient Recovery Process after
the System Connected
● Adjustable Fault Timing to Prevent False Shutdown
● Behavior after Fault:
The SGM25701B will latch off when a fault is detected,
while the SGM25701A will go into auto-retry mode.
SGM25701A: Auto-Retry
SGM25701B: Latch-Off
● Available in a Green MSOP-10 Package
SGM25701 is available in a Green MSOP-10 package.
APPLICATIONS
24V/48V Industrial System
Server Backplane System
Solid State Circuit Breaker
Base Station
TYPICAL APPLICATION
RSENSE
VOUT
VIN
Only required when
using SS startup.
CIN
COUT
Z1
D1
M1
3.6MΩ (1)
CSS
D2
1kΩ
GATE
Q2
VIN
SENSE
R1
R3
EN/UVLO
OUT
VDD
SGM25701
OVLO
PWR
100kΩ
R2
R4
PG
GND
TIMER
CTIMER
RPWR
NOTE: 1. The resistance provides a stable leaking path for the GATE pin when the VIN is quickly pulled low in the case of repeated restarts.
Figure 1. Typical Application Circuit
SG Micro Corp
FEBRUARY2023–REV. A.1
www.sg-micro.com
Positive High-Voltage Hot Swap and Inrush
Current Controller with Power-Limiting
SGM25701
PACKAGE/ORDERING INFORMATION
SPECIFIED
TEMPERATURE
RANGE
PACKAGE
DESCRIPTION
ORDERING
NUMBER
PACKAGE
MARKING
PACKING
OPTION
MODEL
SGM004
XMS10
XXXXX
SGM095
XMS10
XXXXX
SGM25701A
SGM25701B
MSOP-10
MSOP-10
SGM25701AXMS10G/TR
Tape and Reel, 4000
Tape and Reel, 4000
-40℃ to +125℃
-40℃ to +125℃
SGM25701BXMS10G/TR
MARKING INFORMATION
NOTE: XXXXX = Date Code, Trace Code and Vendor Code.
X X X X X
Vendor Code
Trace Code
Date Code - Year
Green (RoHS & HSF): SG Micro Corp defines "Green" to mean Pb-Free (RoHS compatible) and free of halogen substances. If
you have additional comments or questions, please contact your SGMICRO representative directly.
ABSOLUTE MAXIMUM RATINGS
RECOMMENDED OPERATING CONDITIONS
Supply Voltage, VIN ................................................9V to 70V
PG Voltage.............................................................0V to 70V
Junction Temperature Range...................... -40℃ to +125℃
VIN to GND (1).................................................... -0.3V to 80V
SENSE, OUT and PG to GND........................... -0.3V to 80V
GATE to GND (1) ................................................ -0.3V to 80V
OUT to GND (1ms Transient) (2) ........................... -1V to 80V
EN/UVLO to GND.............................................. -0.3V to 80V
OVLO to GND...................................................... -0.3V to 6V
VIN to SENSE................................................... -0.3V to 0.3V
Package Thermal Resistance
OVERSTRESS CAUTION
Stresses beyond those listed in Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to
absolute maximum rating conditions for extended periods
may affect reliability. Functional operation of the device at any
conditions beyond those indicated in the Recommended
Operating Conditions section is not implied.
MSOP-10, θJA ....................................................... 147℃/W
MSOP-10, θJB ......................................................... 94℃/W
MSOP-10, θJC ......................................................... 52℃/W
Junction Temperature.................................................+150℃
Storage Temperature Range.......................-65℃ to +150℃
Lead Temperature (Soldering, 10s)............................+260℃
ESD Susceptibility
ESD SENSITIVITY CAUTION
This integrated circuit can be damaged if ESD protections are
not considered carefully. SGMICRO recommends that all
integrated circuits be handled with appropriate precautions.
Failureto observe proper handlingand installation procedures
can cause damage. ESD damage can range from subtle
performance degradation tocomplete device failure. Precision
integrated circuits may be more susceptible to damage
because even small parametric changes could cause the
device not to meet the published specifications.
HBM.............................................................................2000V
CDM ............................................................................1000V
NOTES:
1. When the chip is enabled, the voltage of GATE pin is
generally 12.7V higher than the VIN pin voltage. Therefore,
the absolute maximum rating of VIN (80V) is only applicable
when the chip is stopped, or since the absolute maximum
rating of the GATE pin is also 80V, the 80V of VIN is only
applicable when the pin is momentarily surged.
DISCLAIMER
SG Micro Corp reserves the right to make any change in
circuit design, or specifications without prior notice.
2. An external MOSFET with VGS_TH higher than VOUT is
required during -ve transients. This effectively prevents false
turn-on of the MOSFET during -ve transients.
SG Micro Corp
www.sg-micro.com
FEBRUARY 2023
2
Positive High-Voltage Hot Swap and Inrush
Current Controller with Power-Limiting
SGM25701
PIN CONFIGURATION
(TOP VIEW)
SENSE
GATE
OUT
1
2
3
4
5
10
9
VIN
EN/UVLO
OVLO
8
PG
7
PWR
TIMER
6
GND
MSOP-10
PIN DESCRIPTION
PIN
NAME
SENSE
VIN
I/O
FUNCTION
Current Sense Pin. The voltage from the input pin to this pin is measured by the current flowing
into the sense resistor. When the detected voltage at the RSENSE exceeds 55mV, it indicates that
the circuit is in an overload state at this time, and the fault timer is started at this time.
1
I
I
I
2
Input Supply Voltage. It is recommended to place a small bypass capacitor close this pin.
Enable and Under-Voltage Lockout Pin. The EN/UVLO threshold is programmed by an external
resistor divider. Internal hysteresis is controlled by a 19µA current source. The threshold of the
turn-on voltage is set to 2.5V. It is also possible to control this pin for remote shutdown.
Over-Voltage Lockout Pin. The over-voltage threshold is programmed by the resistor divider
from the power supply to the OVLO terminal to GND. Hysteretic control is achieved through an
internally programmed 19µA current source. The over-voltage shutdown threshold is set to
2.5V.
3
EN/UVLO
4
OVLO
I
5
6
7
8
GND
TIMER
PWR
PG
-
I/O
I
Ground.
Fault Timer Pin. An external capacitor between TIMER and GND pins provides the fault time
delay and insertion delay time. The chip's restart time is also controlled by this capacitor.
Power-Limiting Programmable Pin. The RPWR and RSENSE determine the maximum allowable
dissipation of the external MOSFET.
O
Power Good Indicator Pin. The VDS voltage of the external MOSFET determines its state.
Power Output Pin. Connect this pin to output (i.e., external MOSFET source). The chip monitors
MOSFET VDS voltage through this pin to limit the MOSFET power and control the PG signal
accordingly.
9
OUT
I
Gate Drive Output. This pin is connected to the gate of the external MOSFET. During normal
operation, the voltage on this pin will be 12.7V higher than the OUT pin.
10
GATE
O
SG Micro Corp
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FEBRUARY 2023
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Positive High-Voltage Hot Swap and Inrush
Current Controller with Power-Limiting
SGM25701
ELECTRICAL CHARACTERISTICS
(TJ = -40℃ to +125℃, typical values are at TJ = +25℃, VIN = 48V, unless otherwise noted.)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
VIN
Input Current, Enabled
Input Current, Disabled
IIN_EN
IIN_DIS
VEN/UVLO > 2.5V and VOVLO < 2.5V
VEN/UVLO < 2.5V or VOVLO > 2.5V
0.40
70
0.55
110
mA
µA
Power-On Reset Threshold at VIN
to Trigger Insertion Timer
Power-On Reset Threshold at VIN
to Enable All Functions
PORIT
VIN increasing
VIN increasing
7.6
8.1
9.0
V
POREN
8.4
90
V
POREN Hysteresis
POREN_HYS VIN decreasing
mV
OUT
OUT Bias Current, Enabled
OUT Bias Current, Disabled (1)
EN/UVLO, OVLO
IOUT_EN
IOUT_DIS
VOUT = VIN, normal operation
Disabled, VOUT = 0V, VSENSE = VIN
6
µA
25
EN/UVLO Threshold Voltage
EN/UVLO Hysteresis Current
VEN/UVLO
2.4
12
2.5
19
15
1
2.6
26
V
IEN/UVLO_HYS VEN/UVLO = 1V
Delay to GATE high
Delay to GATE low
VEN/UVLO_BIAS VEN/UVLO = 48V
VOVLO
IOVLO_HYS
µA
EN/UVLO Delay Time
tEN/UVLO_DLY
µs
EN/UVLO Bias Current
OVLO Threshold Voltage
OVLO Hysteresis Current
1
µA
V
2.4
12
2.5
19
15
1
2.6
26
VOVLO = 2.6V
µA
Delay to GATE high
Delay to GATE low
OVLO Delay Time
tOVLO_DLY
µs
OVLO Bias Current
VOVLO_BIAS VOVLO = 2.4V
1
µA
PWR
PWRLIM-1
PWRLIM-2
IPWR
V(SENSE - OUT) = 48V, RPWR = 150kΩ
19
25
25
20
31
mV
mV
µA
Power-Limiting Sense Voltage
(VIN - SENSE)
V(SENSE - OUT) = 24V, RPWR = 75kΩ
PWR Pin Current
GATE Pin
VPWR = 2.5V
Source Current
Normal operation, V(GATE - OUT) = 5V
VEN/UVLO < 2.5V
10
1.8
55
16
2.1
85
22
2.4
115
µA
mA
mA
IGATE
Sink Current
V(VIN - SENSE) = 150mV or VIN < PORIT, VGATE = 5V
Gate Output Voltage in Normal
Operation
VGATE
GATE - OUT voltage
12.2
12.7
13.2
V
NOTE: 1. A 1MΩ resistor between OUT and SENSE pins determines the bias current (disabled) of VOUT
.
SG Micro Corp
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FEBRUARY 2023
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Positive High-Voltage Hot Swap and Inrush
Current Controller with Power-Limiting
SGM25701
ELECTRICAL CHARACTERISTICS (continued)
(TJ = -40℃ to +125℃, typical values are at TJ = +25℃, VIN = 48V, unless otherwise noted.)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Current Limit
Threshold Voltage
Response Time
VCL
tCL
VIN - SENSE voltage
48.5
55.0
10
61.5
mV
µs
VIN - SENSE stepped from 0mV to 80mV
Enabled, VSENSE = VOUT
12
SENSE Input Current
ISENSE
µA
Disabled, VOUT = 0V
70
Circuit Breaker
Threshold Voltage
VCB
tCB
VIN - SENSE voltage
80
105
0.4
130
1.2
mV
µs
VIN - SENSE stepped from 0mV to 150mV, time to
GATE low, no load
Response Time
TIMER
Upper Threshold
VTMRH
3.85
1.20
4.00
1.25
0.3
0.3
5
4.15
1.30
Restart cycles (SGM25701A)
End of 8th cycle (SGM25701A)
Re-enable Threshold (SGM25701B)
V
Lower Threshold
VTMRL
Insertion Time Current
Sink Current, End of Insertion Time
Fault Detection Current
Fault Sink Current
3
7
µA
mA
µA
µA
%
VTIMER = 2V
1.2
70
1.5
1.6
95
2.0
120
3.3
ITIMER
2.4
0.43
1
Fault Restart Duty Cycle
Fault to GATE Low Delay
PG
DCFAULT
tFAULT
TIMER pin reaches 4V
µs
Decreasing
0.8
0.8
1.4
1.4
85
2.0
2.0
150
2
Threshold Measured at SENSE -
OUT
PGTH
V
Increasing, relative to decreasing threshold
Output Low Voltage
Off Leakage Current
PGVOL
PGIOH
ISINK = 2mA
VPG = 70V
mV
µA
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Positive High-Voltage Hot Swap and Inrush
Current Controller with Power-Limiting
SGM25701
FUNCTIONAL BLOCK DIAGRAM
PG
PWR
SGM25701
20μA
VIN
1.4V/2.8V
-
OUT
Power-Limiting
Threshold
Charge
Pump
+
VDS
1MΩ
+
-
SENSE
VIN
16μA
GATE
-
2.1mA
Gate
Control
ID
85mA
+
-
12.7V
VOUT
+
55mV
Current Limit
Threshold
19μA
Current Limit/
Power-Limiting Control
+
OVLO
-
2.5V
5μA
Insertion
Timer
95μA
Fault
Timer
+
2.5V
-
UVLO
TIMER
1.6mA
End of
Insertion
Time
19μA
Timer and Gate
Logic Control
2.4μA Fault
Discharge
-
7.6V
Insertion Timer POR
Enable POR
+
4V
1.25V
+
-
+
VIN
8.4V/8.3V
-
+
0.3V
-
GND
Figure 2. Block Diagram
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Positive High-Voltage Hot Swap and Inrush
Current Controller with Power-Limiting
SGM25701
TYPICAL PERFORMANCE CHARACTERISTICS
TJ = +25℃ and VIN = 48V, unless otherwise noted.
VIN Pin Input Current vs. VIN Voltage
SENSE Pin Input Current vs. SENSE Pin Voltage
1.0
0.8
0.6
0.4
0.2
0.0
100
80
60
40
20
0
Disable, EN/UVLO = 0V
Enable, EN/UVLO = VIN
Disable, EN/UVLO = 0V
Enable, EN/UVLO = VIN
0
10
20
30
40
50
60
70
0
10
20
30
40
50
60
70
VIN Voltage (V)
SENSE Pin Voltage (V)
OUT Pin Current vs. VIN Voltage
GATE Pin Voltage vs. VIN Voltage
80
60
40
20
0
15
12
9
Load at OUT Pin = 600Ω
Current flow is out of the pin
Disable, EN/UVLO = 0V
6
3
Enable, EN/UVLO = VIN
POREN
Enabled, EN/UVLO = VIN
Normal Operation
-20
0
0
10
20
30
40
50
60
70
0
10
20
30
40
50
60
70
VIN Voltage (V)
VIN Voltage (V)
GATE Pin Source Current vs. VIN Voltage
PG Pin Output Low Voltage vs. Sink Current
20
16
12
8
1
0.8
0.6
0.4
0.2
0
4
Enabled, EN/UVLO = VIN
Normal Operation
POREN
0
0
10
20
30
40
50
60
70
0
3
6
9
12
15
18
21
VIN Voltage (V)
PG Sink Current (mA)
SG Micro Corp
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Positive High-Voltage Hot Swap and Inrush
Current Controller with Power-Limiting
SGM25701
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
TJ = +25℃ and VIN = 48V, unless otherwise noted.
MOSFET Power Dissipation Limit vs. RPWR
GATE Pull-Down Current, Circuit Breaker vs. GATE Pin Voltage
250
200
150
100
50
100
80
60
40
20
0
RSENSE = 0.1Ω
RSENSE = 0.05Ω
RSENSE = 0.02Ω
RSENSE = 0.01Ω
RSENSE = 0.005Ω
0
0
25
50
75
100
125
150
0
10
20
30
40
50
60
70
80
RPWR (kΩ)
GATE Pin Voltage (V)
EN/UVLO Hysteresis Current vs. Temperature
OVLO Hysteresis Current vs. Temperature
21
20
19
18
17
16
21
20
19
18
17
16
-50
-25
0
25
50
75
100 125
-50
-25
0
25
50
75
100
125
Temperature (℃)
Temperature (℃)
EN/UVLO, OVLO Threshold Voltage vs. Temperature
Input Current, Enabled vs. Temperature
2.53
2.52
2.51
2.50
2.49
2.48
0.42
0.41
0.4
EN/UVLO
OVLO
0.39
0.38
0.37
-50
-25
0
25
50
75
100 125
-50
-25
0
25
50
75
100 125
Temperature (℃)
Temperature (℃)
SG Micro Corp
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Positive High-Voltage Hot Swap and Inrush
Current Controller with Power-Limiting
SGM25701
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
TJ = +25℃ and VIN = 48V, unless otherwise noted.
Current Limit Threshold vs. Temperature
Circuit Breaker Threshold vs. Temperature
55.5
55.0
54.5
54.0
53.5
53.0
110
108
106
104
102
100
-50
-50
-50
-25
0
25
50
75
100 125
-50
-25
0
25
50
75
100 125
Temperature (℃)
Temperature (℃)
Power-Limiting Threshold vs. Temperature
GATE Output Voltage vs. Temperature
27.0
26.5
26.0
25.5
25.0
24.5
13.0
12.8
12.6
12.4
12.2
12.0
GATE - OUT Voltage,
Normal Operation
-25
0
25
50
75
100 125
-50
-25
0
25
50
75
100 125
Temperature (℃)
Temperature (℃)
GATE Source Current vs. Temperature
GATE Pull-Down Current, Circuit Breaker vs. Temperature
110
17.0
16.8
16.6
16.4
16.2
16.0
100
90
80
70
GATE - OUT = 5V
GATE = 5V
75 100
60
-25
0
25
50
75
100 125
-50
-25
0
25
50
125
Temperature (℃)
Temperature (℃)
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Positive High-Voltage Hot Swap and Inrush
Current Controller with Power-Limiting
SGM25701
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
TJ = +25℃ and VIN = 48V, unless otherwise noted.
PG Output Low Voltage vs. Temperature
110
100
90
80
70
PG Sink Current = 2mA
60
-50
-25
0
25
50
75
100 125
Temperature (℃)
SG Micro Corp
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Positive High-Voltage Hot Swap and Inrush
Current Controller with Power-Limiting
SGM25701
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
TJ = +25℃ and VIN = 36V, unless otherwise noted.
Start-Up
Start-Up (Zoomed In)
VIN
VIN
VOUT
VOUT
VGATE
VTIMER
VGATE
VTIMER
Time (100ms/div)
Time (5ms/div)
Start-Up into Short-Circuit
Under-Voltage Lockout
VIN
IIN
VIN
VOUT
VGATE
VGATE
VTIMER
Time (10ms/div)
Time (10ms/div)
Over-Voltage Lockout
Gradual Over-Current
IIN
VIN
VIN
VOUT
VGATE
VGATE
VTIMER
Time (20ms/div)
Time (5ms/div)
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Positive High-Voltage Hot Swap and Inrush
Current Controller with Power-Limiting
SGM25701
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
TJ = +25℃ and VIN = 36V, unless otherwise noted.
Load Step
Hot-Short on Output
IIN
IIN
VIN
VIN
VGATE
VGATE
VTIMER
VTIMER
Time (10ms/div)
Time (10ms/div)
Auto-Retry
Hot-Short (Zoomed In)
SGM25701A
IIN
IIN
VOUT
VIN
VGATE
VGATE
VTIMER
VTIMER
Time (5μs/div)
Time (1s/div)
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Positive High-Voltage Hot Swap and Inrush
Current Controller with Power-Limiting
SGM25701
DETAILED DESCRIPTION
Overview
Power-Limiting
The SGM25701 is designed to limit the generated
inrush current when the circuit card is plugged into and
removed from the live backplane or hot power supply,
reduce the voltage sag and dV/dt on the load during
power-on, and avoid unnecessary reset and other
impacts. The SGM25701 not only has current limit
function, but also detects power dissipation when used
in series to ensure the operations within SOA. Once the
current limit or power-limiting exceeds the preset value,
the SGM25701A components will repeatedly try to
recover until the faults are removed, and the
SGM25701B will latch off. When the input voltage
range exceeds EN/UVLO and OVLO ranges, the
device breaks during the period.
The power-limiting ensures that the power dissipation
(MAX) of M1 is within the SOA of the SGM25701. The
device defines the power dissipation of the M1 by
sensing the VDS of the M1 and the drain current flowing
through RSENSE. The current and voltage values will be
compared to the resistor that is used to program the
power-limiting value on the PWR pin. The fault timer is
activated if the power-limiting circuit is active.
EN/UVLO and OVLO
M1 starts to work when the power supply voltage (VIN)
operates between the under-voltage lockout value and
the over-voltage lockout value programmed by the
resistor network (R1, R2, R3 and R4). When the input
supply voltage is lower than the EN/UVLO threshold,
the 19µA current sink inside the EN/UVLO is enabled,
the current source inside the OVLO is turned off, and
M1 is kept off by the 2.1mA current source pull-down of
the GATE pin. As the input supply voltage increases,
when VEN/UVLO exceeds 2.5V, its internal 19µA current
sink turns off to increase the EN/UVLO voltage,
providing a threshold of hysteresis when M1 is enabled
by the 16µA current source at GATE pin. The EN/UVLO
pin can be connected to VIN to set the minimum
EN/UVLO level, when the VIN reaches the power-on
reset threshold (POREN), M1 is enabled. When the
power supply voltage rises so that the voltage on the
OVLO pin exceeds 2.5V, M1 is pulled down by the
2.1mA current source at GATE pin. At this time, the
OVLO pin voltage is higher than 2.5V, the internal 19µA
current source is turned on, and the VOVLO is decreased
to provide threshold hysteresis. Please refer to the
application and implementation to calculate the
resistance value of R1 ~ R4 to program the threshold.
Current Limit
The device triggers over-current protection when the
voltage on the RSENSE reaches the current limit
threshold of 55mV. In this event, the device limits the
current in M1 by controlling GATE pin, and the TIMER
pin is active. If the current is lower than the threshold
before the fault timeout period ends, the device
recovers. Note that RSENSE cannot be larger than
100mΩ.
Circuit Breaker
Once the load current rises rapidly, the current on
RSENSE may exceed the current limit value before the
current limit control loop responds. When the current on
RSENSE exceeds two times the current limit value, M1 is
pulled down by the 85mA current source to turn off
quickly, and the fault timeout starts timing until the
voltage on RSENSE drops below 105mV. If VTIMER
reaches 4V before current limit or power-limiting
ceases, M1 will be pulled off by the 2.1mA current
source.
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Positive High-Voltage Hot Swap and Inrush
Current Controller with Power-Limiting
SGM25701
DETAILED DESCRIPTION (continued)
The SGM25701 has a power-up sequence that can be
divided into 3 distinct parts: insertion time, inrush limit
and normal operation. Once in normal operation, the
TIMER and GATE pins depend on whether the output
has a fault condition.
Power Good Pin
The PG pin remains high during the turn-on period until
the VIN increases above ≊ 1V. At this time, as VIN
increases, PG continues to pull low. When the VOUT
increases to within 1.4V of the SENSE pin voltage, (VDS
< 1.4V), PG is switched high. If VDS of M1 increases
above 2.8V, PG switches low. PG requires a pull-up
resistor and the pull-up voltage (VPG) may be as high as
70V for transient capability up to 80V. If PG requires a
delay, please refer to Figure 3. Capacitor CPG adds a
delay to the rising edge in Figure 3 (1). The slew rate of
the rising edge is determined by RPG1 + RPG2 and CPG,
and the slew rate of the falling edge is determined by
Power-Up Sequence
The SGM25701 has an input voltage range of 9V to
70V, and the transient input can reach 80V. Please
refer to Figure 4 for details of this section. When the
input voltage begins to increase, a strong pull-down
85mA current source inside the GATE pin prevents the
Miller capacitance of the MOSFET from being charged.
Furthermore, the TIMER pin is pulled low until the VIN
reaches the PORIT threshold. At this time, between
insertions, the CTIMER begins to be charged by the
internal 5μA current source when the M1 is still turned
off by the internal 2.1mA current source without being
affected by VIN. VIN is allowed to stabilize gradually
during the insertion time. When the voltage of the
TIMER pin reaches 4V, the insertion time is over, and
the charge on the CTIMER is quickly discharged by the
internal 1.6mA current source. After the insertion time,
when the VIN reaches the power-on reset threshold
(POREN), the control circuit is enabled. If the input
voltage exceeds the under-voltage lockout threshold,
the 16μA current source inside the GATE pin starts to
work and turns on M1, and the VGS of M1 is limited to
12.7V by the internal Zener diode. When the OUT pin
voltage increases, the SGM25701 detects the drain
current and power dissipation of the M1, and enables
the current limit circuit and power-limiting circuit. During
the inrush limit period, the CTIMER is charged by the
internal 95μA current source at the TIMER pin. If the
power dissipation on M1 and the input current decrease
below their respective limit thresholds before the CTIMER
voltage value reaches 4V, the 95μA current source is
turned off and the charge of the CTIMER is discharged by
the internal 2.4μA current sink.
R
PG2 and CPG in Figure 3 (2). Add a diode as shown in
Figure 3 (3) to achieve an equal slope of rising edge
and falling edge. For most applications, the typical
values in Figure 3 (2) are recommended: RPG1 = 100kΩ,
R
PG2 = 0Ω, CPG = 1μF.
VPG
RPG1
Power Good
SGM25701
PG
CPG
GND
(1)
VPG
RPG1
SGM25701
Power Good
CPG
PG
RPG2
GND
(2)
VPG
RPG1
When the OUT pin voltage increases to within 1.4V of
the input voltage, the current limit interval is completed
and the PG pin is pulled high. If the voltage of TIMER
pin reaches 4V before the current limit or power-limiting
ceases, the TIMER pin will be enabled and the GATE
pin of M1 will be pulled low by the internal 2.1mA
current source and shut down until the next power-up
sequence starts or the restart sequence ends.
SGM25701
Power Good
CPG
PG
RPG2
GND
(3)
Figure 3. Adding Delay to the Power Good Output Pin
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Positive High-Voltage Hot Swap and Inrush
Current Controller with Power-Limiting
SGM25701
DETAILED DESCRIPTION (continued)
VIN
UVLO
PORIT
0V
4V
2.4μA
95μA
5μA
TIMER
GATE
1.6mA
0.3V
0V
85mA
Pull-Down
16μA Source
2.1mA Pull-Down
Current Limit
Load Current
OUT
1.4V
PG
Insertion Time
Normal Operation
Inrush
Limit
Figure 4. Power-Up Sequence (Power-Limiting Only)
2.4μA current. When the TIMER pin is charged to 4V,
Gate Control
and the device is still in current limit or power-limiting
state, the load cannot be started properly. The GATE
will continue to be pulled down by the 2.1mA until the
end of the restart sequence (SGM25701A) or the start
sequence initialization (SGM25701B). The GATE pin is
also pulled down by the 2.1mA current source when the
supply voltage is lower than EN/UVLO threshold
voltage or above OVLO threshold voltage. Please refer
to Figure 5 for the detailed structure.
An internal charge pump can provide an internal bias
higher than the output voltage to boost the gate of the
N-MOSFET. The VGS of M1 is limited to 12.7V by an
internal Zener diode. During normal operation (see
Figure 4), the GATE pin is charged to approximately
12.7V above the OUT pin by the internal 16μA current
source. If the maximum gate-source voltage of the
external N-MOSFET is less than 12.7V, a low voltage
Zener diode with a forward current of at least 100mA
must be added outside the device. A strong pull-down
current source of 85mA for the initial operation of the
device can prevent M1 from being mis-turned through
the drain-to-gate capacitance.
RSENSE
VOUT
COUT
VIN
Q1
When the system is initially powered up, the GATE pin
is pulled low by an internal 85mA current source to
prevent misleading MOSFET on through the drain-gate
capacitance. The GATE pin is pulled low by a 2.1mA
current source in insertion time (see Figure 4) while the
MOSFET is always turned off. During the following
inrush limit time (see Figure 4), the voltage of the GATE
pin is limited to the programmed current or
power-limiting level when the TIMER pin is charged by
the 95μA current source. If SGM25701 exits current
limit or power-limiting state before the TIMER pin is
charged to 4V, the circuit will enter normal operating
mode and the TIMER will be discharged by the internal
SENSE
Charge
GATE
OUT
Pump
VIN
Gate
Control
Fault/
85mA
Current Limit/
Power-Limiting
Control
UVLO/
OVLO/
Insertion
Time
Circuit Breaker/
Initial Hold
Down
2.1mA
Figure 5. Gate Control
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Positive High-Voltage Hot Swap and Inrush
Current Controller with Power-Limiting
SGM25701
DETAILED DESCRIPTION (continued)
discharge (SGM25701A). After seven failure timeout
cycles, the restart sequence ends when the voltage of
the eighth descent ramp of the TIMER pin drops below
0.3V, and the 16μA current source of the GATE pin
turns on M1. If the fault persists, the restart sequence
will be repeated.
Shutdown Control
In addition, the remote control device can be turned off
and safely started by connecting an open collector
device or an open-drain device on the EN/UVLO pin, as
shown in the Figure 6.
VSYS
VIN
The SGM25701B will latch the fault status after the fault
detection timeout. The CTIMER is discharged by a 2.4μA
current sink. The GATE pin is pulled low by a 2.1mA
current source until the power-up sequence is reset by
cycling the input voltage, or the UVLO pin is
momentarily pulled below 2.5V by a control signal, as
shown in Figure 7. The voltage of the TIMER pin must
be less than 0.3V to restart effectively.
R1
EN/UVLO
R2
R3
Shutdown
SGM25701
OVLO
GND
Figure 6. Shutdown Control
VSYS
VIN
R1
Fault Timer and Restart
EN/UVLO
When the current limit or power-limiting value is
reached during the startup process, the GATE pin
voltage is limited to regulate the load current and power
dissipation. Then a 95μA current source will charge the
TIMER, please refer to the Figure 8. If the current or
power-limiting situation fades before the TIMER pin is
charged to 4V, the device enters normal operation
mode. Otherwise, the GATE pin of M1 will be
continuously pulled low by the 2.1mA current source.
The TIMER pin is discharged by the 2.4μA current sink
and enters a restart sequence of repeated charge and
Restart
Control
R2
R3
SGM25701B
OVLO
GND
Figure 7. Latched Fault Restart Control
Fault Detection
Current Limit
Load
Current
2.1mA Pull-Down
16μA Source
GATE
4V
2.4μA
95μA
TIMER
1.25V
1
2
3
7
8
0.3V
Fault Timeout Period
tRESTART
Figure 8. Restart Sequence (SGM25701A)
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Positive High-Voltage Hot Swap and Inrush
Current Controller with Power-Limiting
SGM25701
APPLICATION INFORMATION
The SGM25701 is a hot swap controller used for fault
case protections and inrush current management.
Consider startup, hot-short and start-into-short
scenarios in detail before proceeding with applications.
help dissipate heat. The following example uses a
value of 30℃/W, which is similar to SGM25701 EVB.
The test conditions for hot swap are needed to know
before the test. The design must ensure that the
MOSFET is safe even if the output is shorted. It is
recommended not to carry the load until the MOSFET
is successfully started. Loading the MOSFET too early
may cause the startup failure.
In addition, for the safety of the equipment and systems,
please carefully review the SOA (safe operating area)
section of the choice of MOSFET. It is recommended to
use the SGM25701 design calculator provided in the
datasheet. The following design cases and calculation
formulas can be used for reference.
RSENSE
VIN
Q1
Typical Application
RSENSE
VOUT
COUT
VIN
VIN
SENSE
GATE OUT
PG
Only required when
using SS startup.
CIN
Z1
D1
M1
3.6MΩ (1)
CSS
D2
1kΩ
GATE
Q2
VIN
SENSE
R1
R3
CL
RL
SGM25701
EN/UVLO
OUT
GND
VDD
100kΩ
SGM25701
OVLO
PWR
R2
R4
PG
TIMER
GND
Figure 10. No Load Current during Turn-On
RPWR
CTIMER
Table 1. Design Parameters
Parameter
Figure 9. Typical Application Schematic (36V/11A)
Value
24V to 48V
11A
Input Voltage
Design Requirements
Operating Load Current (MAX)
Lower EN/UVLO Threshold
Upper EN/UVLO Threshold
Lower OVLO Threshold
Table 1 lists the necessary parameters which are
needed to know before designing. The power
dissipation of the hot swap MOSFET during startup is
stored in the output capacitor. Therefore, the VIN and
COUT value determine the stress of the MOSFET. The
selection of sense resistor is determined by the
maximum operating load current. Additionally, the
maximum operating load current, ambient temperature,
and thermal characteristics of the PCB (RθCA), all affect
the RDSON requirements and the number of power
MOSFETs used. The RθCA value is extremely sensitive
to copper area and PCB layout. Note that the drain is
not electrically grounded, so the ground plane does not
22V
24V
48V
Upper OVLO Threshold
50V
Load Capacitance (MAX)
1000µF
85℃
Ambient Temperature (MAX)
MOSFET RθCA
(Function of Layout)
30℃/W
Pass Hot-Short on Output.
Pass A Start into Short.
The Load is Off until PG Asserted.
A Hot Board cannot be Plugged Back in.
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Positive High-Voltage Hot Swap and Inrush
Current Controller with Power-Limiting
SGM25701
APPLICATION INFORMATION (continued)
If the calculated temperature value of a single MOSFET
Detailed Design Procedure
is too high, the power dissipation can be dispersed by
increasing the number of MOSFETs.
Select RSENSE and CL Setting
The device measures real-time current by monitoring
the voltage across the RSENSE. When the voltage across
When using multiple MOSFETs in parallel, please use
Equation 4 as below.
R
SENSE exceeds 55mV, the GATE pin is pulled low. Note
the power and size of the RSENSE and the selected
over-current value. Use Equation 1 to calculate the
appropriate sense resistance.
ILOAD,MAX
TC,MAX = TA,MAX + RθCA ×(
)2 ×RDSON (TJ )
(4)
# of MOSFETs
VCL
ILIM
55mV
11A
Select Power-Limiting
RSENSE
=
=
= 5mΩ
(1)
It is usually best to use power-limiting to reduce stress
on the MOSFET. However, when the power-limiting is
set very low and the current flowing through the
MOSFET is controlled, the voltage across the RSENSE
will very low. Equation 5 can be used to calculate the
Selecting the Hot Swap MOSFET(s)
Selecting the right MOSFET for hot swap applications
is critical. Please ensure that the device meets the
requirements as below:
voltage across the RSENSE
.
The VDS of the MOSFET can withstand the
maximum input voltage of the system along with
the ringing introduced during transients.
P
LIM ×RSENSE
VSENSE
=
(5)
VDS
The SOA of the MOSFET can meet the following
scenarios: startup, hot-short, and start-into-short.
VSENSE below 5mV is not recommended to avoid low
power-limiting accuracy. In this application, it can use
Equation
6
to calculate the corresponding
Try to keep the RDSON as small as possible to avoid
excessive temperature rise. It recommends a
power-limiting value.
steady state of less than +125℃ for MOSFETs.
VSENSE,MIN × V
5mV × 48V
5mΩ
IN,MAX
P
=
=
= 48W
LIM,MIN
(6)
RSENSE
The maximum continuous current must be greater
than the maximum load current, and the drain
pulse current must be greater than the threshold
current of the circuit breaker.
It can further calculate the corresponding minimum
PWR at this power-limiting according to Equation 7.
R
VDS
RPWR = 1.30×105 ×RSENSE ×(PLIM -1.18mV ×
)
(7)
RSENSE
For the design, the KNB2710A is selected. The
maximum steady state case temperature can be
calculated as Equation 2 after selecting the MOSFET.
Note that the minimum RPWR corresponds to the VDS
=
VIN,MAX. It can be calculated by Equation 8.
TC,MAX = TA,MAX + RθCA ×IL2OAD,MAX ×RDSON,MAX(TJ )
(2)
48V
RPWR = 1.30×105 ×5mΩ×(48W -1.18mV ×
) = 24kΩ
(8)
a
5mΩ
Note that RDSON is a strong function of junction
temperature. According to the KNB datasheet, RDSON is
For
a
more accurate power-limiting, select
power-limiting value lager than 48W. It can use a
slightly larger resistance of 33kΩ, which sets a
power-limiting of 62.1W.
about 1.4× at 85℃. Equation 3 is used to calculate
TC,MAX
.
TC,MAX = 85℃ + 30℃/W×(11A)2 ×(1.4× 4.5mΩ) = 107.87℃
(3)
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Positive High-Voltage Hot Swap and Inrush
Current Controller with Power-Limiting
SGM25701
APPLICATION INFORMATION (continued)
Set Fault Timer
Check MOSFET SOA
Please ensure that the fault timer has enough time to
ensure that it does not time out in the power-limiting or
current limit operation during this period. If the device is
running in current limit state from the start, the
maximum startup time can be calculated by Equation 9.
Once the power-limiting and timer capacitance values
are selected, it is important to confirm the SOA
characteristics of the MOSFET. SOA characteristics
describe how long a MOSFET can safely operate at a
certain current under a VDS. In the worst case, the
MOSFET operates in a power-limiting state all the time.
The current flowing value is PLIM/VIN,MAX and the
duration is tFLT. Taking this application as an example, it
must ensure that the MOSFET may handle 1A at 48V
for 28.9ms. Based on the SOA of the KNB2710A, it can
handle 48V, 19A for 1ms and it can handle 48V, 5A for
100ms. Refer to Equations 13 to 15 to calculate the
corresponding safe working period.
COUT × V
IN,MAX
tSTART,MAX
=
(9)
ILIM
For this example, the device enters a conversion from
power-limiting to current limit during startup. The
startup time can be estimated according to Equation
10.
2
V
COUT
2
P
(10)
lSOA (t) = a× tm
IN,MAX
LIM
(13)
tSTART
=
=
×
+
P
IL2IM
LIM
2
1000μF (48V) 62.1W
×
+
|SOA (t1)
62.1W (11A)2
19A
ln
2
ln(
)
ISOA (t2 )
t1
5A
1ms
(14)
= 18.81ms
m =
=
= -0.29
ln(
)
ln(
)
t2
100ms
Please note that the time calculated above is the ideal
constant power conversion to constant current startup.
Because power-limiting is a function of VDS, the actual
startup time will be longer than calculated time. In
addition, it needs to consider errors introduced by some
device specifications, such as CTIMER and constant
current source, power-limiting value, etc., and also
needs an additional 50% time margin to ensure that the
startup time does not time out. Therefore, use Equation
11 to determine the value of the fault timer capacitance.
ISOA (t1)
t1m
19A
(1ms)-0.29
a =
=
= 19A ×(1ms)0.29
(15)
(16)
ISOA (28.9ms) = 19A ×(1ms)0.29 ×(28.9ms)-0.29
= 7.163A
Note that the current calculated above is an ideal
calculation considering the MOSFET case temperature
to be +25 ℃ . A certain ambient temperature and
thermal increase during operation can make the
MOSFET more possible to hot-short. It can use
Equation 17 to calculate the approximate current.
tFLT ×ITIMER(TYP)
18.81ms×95μA
CTIMER
=
×1.5 =
×1.5 = 670nF
(11)
VTIMER(TYP)
4V
The capacitor of 680nF with
a
slightly larger
TJ,ABSMAX - TC,MAX
ISOA (28.9ms,TC,MAX ) = ISOA (28.9ms,25℃)×
(17)
capacitance can be selected to calculate the
programming time of the fault timer according to
Equation 12.
IJ,ABSMAX - 25℃
175℃ -107.87℃
175℃ - 25℃
= 7.163A ×
= 3.21A
CTIMER × VTIMER,TYP
680nF× 4V
95μA
tFLT
=
=
= 28.6ms
(12)
ITIMER,TYP
Based on this calculation, the MOSFET can handle
3.21A, 48V for 28.9ms at elevated case temperature.
This value is larger than the 1.29A required for
power-limiting startup, indicating that there is little risk
of hot-short to the MOSFET during startup. It is
recommended that the selected MOSFET may
calculate an equivalent current value that exceeds the
required value by 1.3× to provide sufficient margin.
If the system has not started successfully beyond this
time, the SGM25701 will shut down the KNB2710A
MOSFET.
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Positive High-Voltage Hot Swap and Inrush
Current Controller with Power-Limiting
SGM25701
APPLICATION INFORMATION (continued)
2.5V
R2
Set Under-Voltage and Over-Voltage Threshold
By setting the EN/UVLO and OVLO thresholds,
SGM25701 turns on the main power MOSFET M1 when
the input voltage is within the normal operating range.
Conversely, M1 switches off, stopping the output
current.
VUVH = 2.5V + [R1 ×(
+19μA)]
(22)
2.5V ×(R1 + R2 )
(23)
(24)
(25)
VUVL
=
R2
VUV(HYS) = R1 ×19μA
2.5V ×(R3 + R4 )
The four thresholds can be accurately calculated using
the configuration shown in Figure 11.
VOVH
=
R4
VIN
VSYS
SGM25701
R1
R2
+
-
2.5V
2.5V
R4
EN/UVLO
(26)
(27)
VOVL = 2.5V + [R3 ×(
-19μA)]
19μA
19μA
Timer and
Gate
Logic
VOV(HYS) = R3 ×19μA
Control
R3
R4
OVLO
GND
+
-
Input and Output Protection
The SGM25701 needs to connect voltage clamping
devices on the input side under hot plug conditions. It is
necessary to select an appropriate TVS as shown in
Figure 1. When the hot plug circuit is suddenly pulled
out of the socket under the load condition, TVS needs
to suppress the voltage surge at this time. The principle
of TVS selection is that there is a small leakage current
at VIN(MAX), and it is clamped below the set voltage when
the input surge voltage is large.
2.5V
Figure 11. Programming the Four Thresholds
Use the following Equations 18 and 19 to calculate the
upper and lower threshold of EN/UVLO.
VUV(HYS)
VUVH - VUVL
R1 =
=
(18)
(19)
19μA
19μA
Component Values
Table 2 provides the selected device values under the
condition of 36V/11A, and the application curve is also
based on these device values.
2.5V ×R1
(VUVL - 2.5V)
R2
=
Use the following Equations 20 and 21 to calculate the
upper and lower threshold of OVLO.
Table 2. Component Values
VOV(HYS)
VOVH - VOVL
Component
Value
5mΩ
R3 =
=
(20)
(21)
19μA
19μA
RSENSE
R1
100kΩ
2.5V ×R3
(VOVH - 2.5V)
R4
=
R2
13kΩ
R3
100kΩ
R4
5.6kΩ
VUVH = 24V, VUVL = 22V, VOVH = 50V, and VOVL = 48V.
Therefore, VUV(HYS) = 2V and VOV(HYS) = 2V.
RPWR
M1
33kΩ
KNB2710A
SMBJ70A-13-F
MBRS3100T3G
680nF
The resistor values are: R1 = 100kΩ, R2 = 13kΩ, R3 =
100kΩ, and R4 = 5.6kΩ.
Z1
D1
CTIMER
COUT
Under the condition that R1 - R4 is calculated, the
threshold voltage and hysteresis voltage are calculated
using Equation 22 to Equation 27.
1000μF
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Positive High-Voltage Hot Swap and Inrush
Current Controller with Power-Limiting
SGM25701
APPLICATION INFORMATION (continued)
Power Supply Recommendations
The RSENSE needs to be close to the controller chip
and use the Kelvin connection.
Generally speaking, SGM25701 can provide stable
power supply with reliable performance. However,
when other card slots on the backplane are inserted,
the high frequency dynamics on the backplane will
appear. When this happens in the system, it is
recommended to place a capacitor of 1μF on the drain
of MOSFET. This will reduce the common mode
voltage between VIN and SENSE pins, which needs to
be suppressed to prevent over-current shutdown.
The current path and return path from the input to
the load side should be parallel and close to each
other to reduce the loop inductance.
GND of components around SGM25701 can be
connected with each other and connected with
GND pin of SGM25701. Then connect GND to the
system ground uniformly. Do not separately
connect the ground of the devices around the chip
to the ground of the system with high current.
PC Board Guidelines
SGM25701 should observe the following principles
when laying PCB:
PCB layout provides good heat dissipation
conditions for MOSFET M1 to reduce the junction
temperature when it is turned on and off.
SGM25701 needs to be placed near the input
connector to reduce the lead inductance from the
connector to the power MOSFET.
System Considerations
The bypass capacitor of VIN should be placed carefully.
When MOSFET is turned off due to short-circuit, the
input terminal has a very large dV/dt. When the
capacitor is placed close to the VIN pin, the LC filter is
formed due to the long routing from SENSE to VIN. At
this time, a large voltage difference may be formed
between VIN and SENSE. To prevent this, place the
capacitor on the RSENSE terminal instead of VIN
terminal.
As shown in Figure 13, the normal operation of
SGM25701 requires a capacitor on the backplane side.
The capacitor with live backplane needs to absorb the
input surge voltage generated when the controller cuts
off the load. If there is no capacitance, TVS needs to be
placed in the input measurement to prevent large
voltage generated during voltage transient from
exceeding the maximum rated value of VIN pin.
When the output of SGM25701 is inductive load, it is
necessary to reverse parallel diode on the load side.
When the load is cut off, a reverse path is provided for
the current of the inductive load to prevent negative
voltage from damaging the device.
√
SENSE
Trace
Inductance
VIN
×
SGM25701
Figure 12. Layout Trace Inductance
RSENSE
M1
VOUT
+48V
SENSE
GATE
Live
Backplane
OUT
VCC
Inductive
Load
CL
SGM25701
GND
GND
Plug-In Board
Figure 13. Output Diode Required for Inductive Loads
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Positive High-Voltage Hot Swap and Inrush
Current Controller with Power-Limiting
SGM25701
REVISION HISTORY
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
FEBRUARY 2023 ‒ REV.A to REV.A.1
Page
Added SGM25701B Model................................................................................................................................................................................All
Changes from Original (DECEMBER 2022) to REV.A
Page
Changed from product preview to production data.............................................................................................................................................All
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FEBRUARY 2023
22
PACKAGE INFORMATION
PACKAGE OUTLINE DIMENSIONS
MSOP-10
b
E1
E
4.8
1.02
0.3
e
0.5
RECOMMENDED LAND PATTERN (Unit: mm)
D
L
A
A1
c
θ
A2
Dimensions
In Millimeters
Dimensions
In Inches
Symbol
MIN
MAX
1.100
0.150
0.950
0.280
0.230
3.100
3.100
5.050
MIN
MAX
0.043
0.006
0.037
0.011
0.009
0.122
0.122
0.199
A
A1
A2
b
0.820
0.020
0.750
0.180
0.090
2.900
2.900
4.750
0.032
0.001
0.030
0.007
0.004
0.114
0.114
0.187
c
D
E
E1
e
0.500 BSC
0.020 BSC
L
0.400
0°
0.800
6°
0.016
0°
0.031
6°
θ
NOTES:
1. Body dimensions do not include mode flash or protrusion.
2. This drawing is subject to change without notice.
SG Micro Corp
TX00015.000
www.sg-micro.com
PACKAGE INFORMATION
TAPE AND REEL INFORMATION
REEL DIMENSIONS
TAPE DIMENSIONS
P2
P0
W
Q2
Q4
Q2
Q4
Q2
Q4
Q1
Q3
Q1
Q3
Q1
Q3
B0
Reel Diameter
P1
A0
K0
Reel Width (W1)
DIRECTION OF FEED
NOTE: The picture is only for reference. Please make the object as the standard.
KEY PARAMETER LIST OF TAPE AND REEL
Reel Width
Reel
Diameter
A0
B0
K0
P0
P1
P2
W
Pin1
Package Type
W1
(mm)
(mm) (mm) (mm) (mm) (mm) (mm) (mm) Quadrant
MSOP-10
13"
12.4
5.20
3.30
1.50
4.0
8.0
2.0
12.0
Q1
SG Micro Corp
TX10000.000
www.sg-micro.com
PACKAGE INFORMATION
CARTON BOX DIMENSIONS
NOTE: The picture is only for reference. Please make the object as the standard.
KEY PARAMETER LIST OF CARTON BOX
Length
(mm)
Width
(mm)
Height
(mm)
Reel Type
Pizza/Carton
13″
386
280
370
5
SG Micro Corp
www.sg-micro.com
TX20000.000
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