SGM6612A [SGMICRO]

20V, 10A Fully-Integrated Synchronous Boost Converter with Load Disconnect Control;
SGM6612A
型号: SGM6612A
厂家: Shengbang Microelectronics Co, Ltd    Shengbang Microelectronics Co, Ltd
描述:

20V, 10A Fully-Integrated Synchronous Boost Converter with Load Disconnect Control

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SGM6612A  
20V, 10A Fully-Integrated Synchronous Boost  
Converter with Load Disconnect Control  
DESCRIPTION  
FEATURES  
The SGM6612A is a 20V high-efficient synchronous  
Boost converter integrated with two 15mΩ power  
switches. This device offers small size power solution  
for portable equipment. The device has high switching  
frequency up to 2.2MHz with resistor programmable.  
2.7V to 16V Input Voltage Range  
4.5V to 20V Output Voltage Range  
Up to 10A Resistor-Programmable Current Limit  
Up to 2.2MHz Resistor-Programmable Switching  
Frequency  
15Low RDSON Internal MOSFETs  
Up to 95% Efficiency  
The SGM6612A has two operation modes, the pulse  
width modulation (PWM) mode and pulse frequency  
modulation (PFM) mode. The PWM mode is applied at  
moderate to heavy load. The PFM mode is applied at  
light load to improve the efficiency.  
(at VIN = 7.2V, VOUT = 16V, IOUT = 2A)  
Gate Driver for Load Disconnection  
Hiccup Short Protection  
Over-Voltage Protection  
The SGM6612A features a built-in gate driver for  
external MOSFET, which can isolate the output from  
the input when the device shuts down or in output short  
condition. When the output is shorted and the short  
protection is triggered, the device goes to the hiccup  
mode for safety. In addition, the device also provides  
output over-voltage protection, inductor current limit  
protection and thermal shutdown.  
Auto PFM Mode at Light Load  
Available in a Green TQFN-3×3.5-13L Package  
APPLICATIONS  
Portable Loudspeaker Boxes  
LCD Display Source Driver  
Supply for Power Amplifier and Motor Driver  
Supply for USB Type-C  
The SGM6612A is available in a Green TQFN-3×3.5-13L  
package.  
SG Micro Corp  
JUNE 2022– REV. A. 3  
www.sg-micro.com  
20V, 10A Fully-Integrated Synchronous Boost  
Converter with Load Disconnect Control  
SGM6612A  
PACKAGE/ORDERING INFORMATION  
SPECIFIED  
TEMPERATURE  
RANGE  
PACKAGE  
DESCRIPTION  
ORDERING  
NUMBER  
PACKAGE  
MARKING  
PACKING  
OPTION  
MODEL  
6612A  
YTQX13  
XXXXX  
SGM6612A  
TQFN-3×3.5-13L  
SGM6612AYTQX13G/TR  
Tape and Reel, 4000  
-40to +85℃  
MARKING INFORMATION  
NOTE: XXXXX = Date Code, Trace Code and Vendor Code.  
X X X X X  
Vendor Code  
Trace Code  
Date Code - Year  
Green (RoHS & HSF): SG Micro Corp defines "Green" to mean Pb-Free (RoHS compatible) and free of halogen substances. If  
you have additional comments or questions, please contact your SGMICRO representative directly.  
ABSOLUTE MAXIMUM RATINGS  
OVERSTRESS CAUTION  
BOOT Voltage ........................................... -0.3V to VSW + 6V  
VIN, SW, VOUT, DISDRV, EN Voltages............. -0.3V to 23V  
VCC, FB, COMP, FREQ, ILIM Voltages............... -0.3V to 6V  
Package Thermal Resistance  
Stresses beyond those listed in Absolute Maximum Ratings  
may cause permanent damage to the device. Exposure to  
absolute maximum rating conditions for extended periods  
may affect reliability. Functional operation of the device at any  
conditions beyond those indicated in the Recommended  
Operating Conditions section is not implied.  
TQFN-3×3.5-13L, θJA................................................. 66/W  
Junction Temperature .................................................+150℃  
Storage Temperature Range........................-65to +150℃  
Lead Temperature (Soldering, 10s) ............................+260℃  
ESD Susceptibility  
ESD SENSITIVITY CAUTION  
This integrated circuit can be damaged if ESD protections are  
not considered carefully. SGMICRO recommends that all  
integrated circuits be handled with appropriate precautions.  
Failureto observe proper handlingand installation procedures  
HBM.............................................................................2000V  
CDM ............................................................................1000V  
RECOMMENDED OPERATING CONDITIONS can cause damage. ESD damage can range from subtle  
Input Voltage Range ............................................2.7V to 16V  
Output Voltage Range .........................................4.5V to 20V  
Operating Ambient Temperature Range.........-40to +85℃  
Operating Junction Temperature Range......-40to +125℃  
performance degradation tocomplete device failure. Precision  
integrated circuits may be more susceptible to damage  
because even small parametric changes could cause the  
device not to meet the published specifications.  
DISCLAIMER  
SG Micro Corp reserves the right to make any change in  
circuit design, or specifications without prior notice.  
SG Micro Corp  
www.sg-micro.com  
JUNE 2022  
2
 
20V, 10A Fully-Integrated Synchronous Boost  
Converter with Load Disconnect Control  
SGM6612A  
PIN CONFIGURATION  
(TOP VIEW)  
8
7
6
9
5
4
3
2
1
FB  
DISDRV  
VCC 10  
EN 11  
COMP  
ILIM  
VIN 12  
AGND  
FREQ  
BOOT 13  
TQFN-3×3.5-13L  
PIN DESCRIPTION  
PIN  
1
NAME  
FREQ  
AGND  
ILIM  
I/O  
FUNCTION  
Adjustable Switching Frequency Pin. A resistor is placed between FREQ and the  
AGND to program the switching frequency. Do not leave this pin floating in application.  
I
2
-
Analog Signal Ground.  
Adjustable Peak Switch Current Limit. A resistor is placed between ILIM and AGND to  
program the peak switch current limit.  
3
I
Output of the Internal Error Amplifier. Put the loop compensation network between this  
pin and the AGND.  
4
COMP  
FB  
O
5
I
Voltage Feedback. Connect to the resistor divider to program the output voltage.  
Power Ground. Connect to the source of the low-side MOSFET.  
Switch Node of the Converter. Connect to the internal power MOSFETs.  
Boost Converter Output.  
6
PGND  
SW  
PWR  
7
PWR  
8
VOUT  
DISDRV  
VCC  
PWR  
Gate Drive Output for the External Disconnect MOSFET. Connect this pin to the gate of  
the external MOSFET. When the load disconnect function is not used, leave it floating.  
9
O
O
I
Output of the Internal Regulator. Connect this pin to ground with a capacitor more than  
1.0µF.  
10  
11  
12  
13  
EN  
Enable Input Pin. Logic high enables the device. Logic low shuts down the device.  
Power Supply.  
VIN  
I
Gate Driver Supply of High-side MOSFET. Connect this pin to SW pin with a ceramic  
capacitor.  
BOOT  
O
NOTE: I: input, O: output, PWR: power for the circuit.  
SG Micro Corp  
www.sg-micro.com  
JUNE 2022  
3
20V, 10A Fully-Integrated Synchronous Boost  
Converter with Load Disconnect Control  
SGM6612A  
ELECTRICAL CHARACTERISTICS  
(VIN = 2.7V to 14V and VOUT = 16V, TJ = -40to +125, typical values are at TJ = +25, unless otherwise noted.)  
PARAMETER  
SYMBOL  
CONDITIONS  
MIN  
TYP  
MAX UNITS  
Power Supply  
Input Voltage Range  
VIN  
2.7  
16  
3.3  
2.7  
2.6  
V
V
Minimum Input Voltage Range for Start-up  
VIN_SS  
3.0  
2.6  
2.5  
100  
5
TJ = +25  
IN rising, TJ = -40to +85℃  
V
Input Voltage Under-Voltage Lockout Threshold VIN_UVLO  
V
VIN falling, TJ = -40to +85℃  
VIN UVLO Hysteresis  
VIN_HYS  
VCC  
mV  
V
VCC Regulation Voltage  
VCC UVLO Threshold  
ICC = 5mA, VIN = 6V  
VCC_UVLO VCC falling  
2.2  
0.35  
125  
1.2  
3.7  
V
Quiescent Current into VIN Pin  
Quiescent Current into VOUT Pin  
0.5  
200  
3
IC enabled, no load, no ext. MOSFET, VIN = 6V,  
IQ  
µA  
VOUT = 20V, VFB = 1.23V, TJ = -40to +85℃  
IC disabled, VIN = 6V, TJ = -40to +85℃  
Shutdown Current into VIN Pin  
ISD  
µA  
µA  
6
IC disabled, VIN = 16V, TJ = -40to +85℃  
IC disabled, VIN = 16V, VOUT = VSW = 20V,  
TJ = -40to +85℃  
Leakage Current of Low-side MOSFET  
ILS_LKG  
0.1  
5
Output Voltage  
Output Voltage Range  
VOUT  
VOVP  
fSW = 530kHz  
4.5  
20  
V
V
Output Over-Voltage Protection Threshold  
Power Switches  
VIN = 8V, VOUT rising  
20.4  
21  
21.7  
High-side MOSFET On-Resistance  
Low-side MOSFET On-Resistance  
VCC = 5V  
VCC = 5V  
15  
15  
27  
27  
mΩ  
mΩ  
RDSON  
Gm  
Power Stage Trans-Conductance  
(peak current ratio with comp voltage)  
VCC = 5V  
12  
A/V  
Current Limit  
Resistor-Programmable Current Limit  
Short Current Limit  
ILIM  
7.6  
9
10.8  
A
A
RLIM = 80.6kΩ, TJ = +25℃  
ILIM_SHORT  
20  
Voltage Reference  
PWM operation  
1.180 1.198 1.215  
100.2%  
V
Reference Voltage at FB Pin  
VREF  
Auto PFM operation  
VREF  
nA  
Leakage Current into FB Pin  
IFB_LKG  
10  
50  
SG Micro Corp  
www.sg-micro.com  
JUNE 2022  
4
 
20V, 10A Fully-Integrated Synchronous Boost  
Converter with Load Disconnect Control  
SGM6612A  
ELECTRICAL CHARACTERISTICS (continued)  
(VIN = 2.7V to 14V and VOUT = 16V, TJ = -40to +125, typical values are at TJ = +25, unless otherwise noted.)  
PARAMETER  
SYMBOL  
CONDITIONS  
MIN  
TYP  
MAX UNITS  
EN Logic  
EN Pin Logic High Threshold  
EN Pin Logic Low Threshold  
EN Pin Pull-Down Resistor  
Error Amplifier  
VEN_H  
VEN_L  
REN  
1.3  
V
0.4  
V
700  
kΩ  
COMP Pin Output High Voltage  
COMP Pin Output Low Voltage  
Error Amplifier Trans-Conductance  
COMP Pin Sink Current  
COMP Pin Source Current  
Current Limit  
VCOMP_H High threshold, VFB = VREF - 100mV, RLIM = 80.6kΩ  
VCOMP_L Low threshold, VFB = VREF + 100mV, RLIM = 80.6kΩ  
2.0  
0.4  
270  
160  
25  
V
V
GmEA  
ISINK  
VCOMP = 1.2V  
µS  
µA  
µA  
VFB = VREF + 100mV, VCOMP = 1.2V  
VFB = VREF - 100mV, VCOMP = 1.2V  
ISOURCE  
Waiting Time for Restart in Hiccup Mode  
Soft-Start  
tHIC_OFF  
90  
ms  
Start-Up Time  
tSTART-UP  
3.2  
2.5  
ms  
ms  
Pre-Charge Time  
tPRE_CHARGE  
1.8  
3.2  
TJ = +25℃  
Protection  
Thermal Shutdown Rising Threshold  
Thermal Shutdown Falling Threshold  
Switching Frequency  
TSD_R  
TSD_F  
TJ rising  
TJ falling  
155  
130  
R
FREQ = 348kΩ  
460  
205  
530  
245  
600  
285  
Switching Frequency  
fSW  
RFREQ = 842kΩ  
RFREQ = 75kΩ  
kHz  
ns  
1750  
2050  
120  
2350  
Minimum On-Time  
tON_MIN  
Gate Driver for Load Disconnect  
Driver Current for the External MOSFET  
IGD_SINK  
55  
µA  
SG Micro Corp  
www.sg-micro.com  
JUNE 2022  
5
20V, 10A Fully-Integrated Synchronous Boost  
Converter with Load Disconnect Control  
SGM6612A  
TYPICAL PERFORMANCE CHARACTERISTICS  
At TJ = +25, VIN = 7.2V and VOUT = 16V, unless otherwise noted.  
Efficiency vs. Output Current  
Efficiency vs. Output Current  
VOUT = 16V  
L = 3.3μH  
Auto PFM  
100  
90  
80  
70  
60  
50  
40  
30  
20  
100  
90  
80  
70  
60  
50  
40  
30  
20  
VOUT = 16V  
L = 3.3μH  
Auto PFM  
VIN = 6V  
V
V
VIN = 10.8V  
V
V
IN = 7.2V  
IN = 8.4V  
IN = 12V  
IN = 13.2V  
0.0001  
0.001  
0.01  
Output Current (A)  
0.1  
1
3
3
3
0.0001  
0.001  
0.01  
Output Current (A)  
0.1  
1
3
Efficiency vs. Output Current  
VOUT = 14V  
L = 1.8μH  
Auto PFM  
Output Voltage vs. Output Current  
VOUT = 16V  
L = 3.3μH  
Auto PFM  
100  
90  
80  
70  
60  
50  
40  
30  
20  
16.5  
16.4  
16.3  
16.2  
16.1  
16.0  
15.9  
15.8  
15.7  
15.6  
15.5  
VIN = 3V  
IN = 3.6V  
IN = 4.2V  
VIN = 6V  
IN = 7.2V  
IN = 8.4V  
V
V
V
V
0.001  
0.01  
0.1  
1
0.0001  
0.001  
0.01  
0.1  
1
3
Output Current (A)  
Output Current (A)  
Output Voltage vs. Output Current  
VOUT = 16V  
L = 3.3μH  
Auto PFM  
Quiescent Current vs. VIN  
16.5  
16.4  
16.3  
16.2  
16.1  
16.0  
15.9  
15.8  
15.7  
15.6  
15.5  
160  
140  
120  
100  
80  
TJ = +85℃  
TJ = +25℃  
TJ = -40℃  
VIN = 10.8V  
IN = 12V  
IN = 13.2V  
60  
V
V
40  
0.0001  
0.001  
0.01  
0.1  
1
8
9
10  
11  
12  
13  
14  
15  
16  
Output Current (A)  
Input Voltage (V)  
SG Micro Corp  
www.sg-micro.com  
JUNE 2022  
6
20V, 10A Fully-Integrated Synchronous Boost  
Converter with Load Disconnect Control  
SGM6612A  
TYPICAL PERFORMANCE CHARACTERISTICS (continued)  
At TJ = +25, VIN = 7.2V and VOUT = 16V, unless otherwise noted.  
Shutdown Current vs. VIN  
Switch Current Limit vs. Setting Resistor  
5
4.5  
4
16  
14  
12  
10  
8
VOUT = 16V  
IN = 7.2V  
Auto PFM  
V
3.5  
3
2.5  
2
6
1.5  
1
TJ = +85℃  
TJ = +25℃  
TJ = -40℃  
4
2
0.5  
0
0
2
4
6
8
10  
12  
14  
16  
40 60 80 100 120 140 160 180 200 220 240  
Input Voltage (V)  
Resistor (kΩ)  
LS RDSON vs. Temperature  
HS RDSON vs. Temperature  
22  
20  
18  
16  
14  
12  
10  
22  
20  
18  
16  
14  
12  
10  
VCC = 5V  
VCC = 5V  
-50 -25  
0
25  
50  
75 100 125 150  
-50 -25  
0
25  
50  
75 100 125 150  
Temperature ()  
Temperature ()  
Frequency vs. Setting Resistor  
Reference Voltage vs. Temperature  
3300  
3000  
2700  
2400  
2100  
1800  
1500  
1200  
900  
1.202  
1.200  
1.198  
1.196  
1.194  
1.192  
VOUT = 16V  
IN = 7.2V  
V
600  
300  
0
0
100 200 300 400 500 600 700 800 900 1000  
-50 -25  
0
25  
50  
75 100 125 150  
Resistor (kΩ)  
Temperature ()  
SG Micro Corp  
www.sg-micro.com  
JUNE 2022  
7
20V, 10A Fully-Integrated Synchronous Boost  
Converter with Load Disconnect Control  
SGM6612A  
TYPICAL PERFORMANCE CHARACTERISTICS (continued)  
At TJ = +25, VIN = 7.2V and VOUT = 16V, unless otherwise noted.  
VIN UVLO Rising/Falling Threshold vs. Temperature  
EN Rising/Falling Threshold vs. Temperature  
2.8  
2.7  
2.6  
2.5  
2.4  
2.3  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
Rising  
Falling  
Rising  
Falling  
-50 -25  
0
25  
50  
75 100 125 150  
-50 -25  
0
25  
50  
75 100 125 150  
Temperature ()  
Temperature ()  
Steady State 1000mA  
Steady State 10mA  
VIN = 7.2V, VOUT = 16V, L = 3.3μH, COUT = 86μF,  
LOAD = 1000mA  
VIN = 7.2V, VOUT = 16V, L = 3.3μH, COUT = 86μF, Auto PFM,  
ILOAD = 10mA  
I
VOUT2  
VOUT2  
SW  
AC Coupled  
AC Coupled  
SW  
IL  
IL  
Time (1μs/div)  
Time (10μs/div)  
Start-Up by EN  
Shutdown by EN  
VIN = 7.2V, VOUT = 16V, L = 3.3μH, COUT = 86μF, Auto PFM,  
RLOAD = 32Ω  
VIN = 7.2V, VOUT = 16V, L = 3.3μH, COUT = 86μF, Auto PFM,  
RLOAD = 32Ω  
EN  
EN  
VOUT2  
VOUT2  
IL  
IL  
Time (1ms/div)  
Time (2ms/div)  
SG Micro Corp  
JUNE 2022  
www.sg-micro.com  
8
20V, 10A Fully-Integrated Synchronous Boost  
Converter with Load Disconnect Control  
SGM6612A  
TYPICAL PERFORMANCE CHARACTERISTICS (continued)  
At TJ = +25, VIN = 7.2V and VOUT = 16V, unless otherwise noted.  
Load Transient  
Output Short Release (with Load Disconnect MOSFET)  
VOUT2  
AC Coupled  
VOUT2  
VGS  
IL  
ILOAD  
VIN = 7.2V, VOUT = 16V, L = 3.3μH, COUT = 86μF,  
VIN = 7.2V, VOUT = 16V, L = 3.3μH, COUT = 86μF  
ILOAD = 500mA to 2A, 0.1A/μs slew rate  
Time (200μs/div)  
Time (10μs/div)  
Output Short Release (with Load Disconnect MOSFET)  
VOUT2  
VGS  
IL  
VIN = 7.2V, VOUT = 16V, L = 3.3μH, COUT = 86μF  
Time (2ms/div)  
SG Micro Corp  
www.sg-micro.com  
JUNE 2022  
9
20V, 10A Fully-Integrated Synchronous Boost  
Converter with Load Disconnect Control  
SGM6612A  
FUNCTIONAL BLOCK DIAGRAM  
L
VIN  
CBOOT  
CIN  
CVCC  
VCC  
VIN  
BOOT  
SW  
VIN VOUT  
REG  
VCC  
VOUT  
P-MOS  
VOUT2  
EN  
COUT1 RGATE  
CGATE COUT2  
LS  
HS  
DRV  
PWM Control  
&
Protection  
Logic  
ISENSE  
DISDRV  
+
-
ILIM  
1.2V  
+
-
REF  
CR LIM Cmp  
+
-
RUP  
Slope Comp  
FREQ  
ILIM  
1.2V  
VCC  
RFREQ  
PWM  
Cmp  
+
-
FB  
-
Gm  
+
ILIM REF  
OVP  
OT  
VREF  
Protection Protection  
RLIM  
RDOWN  
COMP  
CC  
CP  
RC  
AGND  
PGND  
Figure 1. Block Diagram  
SG Micro Corp  
www.sg-micro.com  
JUNE 2022  
10  
20V, 10A Fully-Integrated Synchronous Boost  
Converter with Load Disconnect Control  
SGM6612A  
DETAILED DESCRIPTION  
The SGM6612A, a synchronous Boost converter,  
integrates two 15mΩ power switches. It is capable of  
delivering up to 10A peak switch current and up to 20V  
output voltage. In moderate to heavy load condition, the  
SGM6612A works in PWM mode with fixed frequency.  
In light load condition, the SGM6612A operates in the  
auto PFM mode to improve the efficiency. Excellent line  
and load transient response can be achieved with  
minimal output capacitance by applying a peak current  
control topology. The external loop compensation  
makes a wider range of inductor and output capacitor  
combinations available.  
Start-up  
The SGM6612A implements the soft-start function to  
reduce the inrush current during start-up. The device  
first charges the output voltage to 1.1 × VIN with the  
fixed 500kHz switching frequency during pre-charge  
phase. After the precharge phase (2.5ms, TYP), the  
output voltage will rise gradually and linearly to the  
target value. The soft-start time is 3.2ms (TYP). Then,  
the switching frequency is set by the resistor connected  
through the FREQ pin.  
Load Disconnect Gate Driver  
The external MOSFET is driven by the DISDRV pin at  
the output to isolate the output from the input in  
shutdown or output short-circuit condition. During the  
start-up phase, the load disconnect MOSFET is softly  
turned on by an internal sink current (55µA, TYP). The  
load disconnect MOSFET connection is shown in  
Figure 2.  
The SGM6612A supports the resistor-programmable  
switching frequency of up to 2.2MHz. In Boost  
operation, the device can avoid overload with the  
help of peak current control topology. In addition, if the  
output current is higher than the short current  
threshold or the output voltage is less than the short  
voltage threshold, hiccup current protection will be  
started in which the regulator remains off for 90ms  
before restarting the converter. The device has a gate  
driver for external MOSFETs to disconnect the output  
from the input side in off-state or output short-circuit  
conditions.  
P-MOS  
VOUT  
VOUT2  
COUT1  
VGS  
COUT2  
CGATE  
RGATE  
SGM6612A  
DISDRV  
Under-Voltage Lockout (UVLO)  
An under-voltage lockout circuit prevents operation at  
input voltages below 2.5V (TYP) with a hysteresis of  
100mV. Therefore, if the input voltage rises and  
exceeds 2.6V (TYP), the device restarts.  
Figure 2. The Load Disconnect MOSFET Configuration  
Enable and Disable  
When the input voltage exceeds minimum input voltage  
during start-up and the EN voltage is higher than its  
logic high threshold, the SGM6612A is enabled. When  
the EN voltage is lower than its logic low threshold, the  
SGM6612A enters shutdown mode.  
The driver voltage and turn-on/off timing can be set by  
the resistor and capacitor which are connected  
between DISDRV pin and VOUT pin.  
SG Micro Corp  
www.sg-micro.com  
JUNE 2022  
11  
 
20V, 10A Fully-Integrated Synchronous Boost  
Converter with Load Disconnect Control  
SGM6612A  
DETAILED DESCRIPTION (continued)  
Adjustable Peak Current Limit  
To avoid accidental large peak current, an internal  
cycle-by-cycle current limit is adopted.  
Adjustable Switching Frequency  
The SGM6612A has an adjustable switching frequency  
up to 2.2MHz. The switching frequency is set by an  
external resistor connected between the FREQ pin and  
the AGND. Do not leave the FREQ pin floating. The  
resistor value is calculated by Equations as follows.  
By connecting a resistor to the ILIM pin, the peak  
switch current limit can be set. Calculate the correct  
resistor value according to Equation 1 as below:  
1
T =  
= k ×CFREQ ×RFREQ + tDELAY  
(2)  
730  
Freq  
(1)  
RLIM  
=
ILIM  
1
- tDELAY  
Freq  
where:  
LIM is the resistor used to set the current limit ().  
LIM is the peak switch current limit (A).  
(3)  
RFREQ  
=
k ×CFREQ  
R
I
where:  
DELAY = 50ns, k = 3, CFREQ = 1.8pF.  
For example, a 50kΩ resistor gives a 14.6A peak  
t
current limit.  
For example, when RFREQ is 348kΩ, the frequency is  
Switch current limit and resistor setting of SGM6612A  
530kHz.  
(Auto PFM) with 7.2V input and 16V output is in Figure  
3.  
Switching frequency versus setting resistor please see  
Figure 4 (VOUT = 16V and VIN = 7.2V).  
16  
VOUT = 16V  
3300  
VOUT = 16V  
IN = 7.2V  
V
IN = 7.2V  
14  
12  
10  
8
3000  
V
Auto PFM  
2700  
2400  
2100  
1800  
1500  
1200  
900  
6
4
600  
2
300  
0
0
40 60 80 100 120 140 160 180 200 220 240  
0
100 200 300 400 500 600 700 800 900 1000  
Resistor (kΩ)  
Resistor (kΩ)  
Figure 3. Switch Current Limit vs. Setting Resistor  
Figure 4. Switching Frequency vs. Setting Resistor  
SG Micro Corp  
www.sg-micro.com  
JUNE 2022  
12  
 
20V, 10A Fully-Integrated Synchronous Boost  
Converter with Load Disconnect Control  
SGM6612A  
DETAILED DESCRIPTION (continued)  
enough to reach the pre-set low threshold and the  
device stops switching. In light load condition, the  
frequency is reduced depending on the load to  
minimize the switching and gate driving losses and  
keep the efficiency high.  
Start-up with Pre-biased Output  
The low-side switch is prohibited from turning on and  
discharging the output if a pre-biased voltage is sensed  
on the output before start-up. As long as the internal  
soft-start voltage is higher than VFB, the low-side switch  
is allowed to sink current to have a monotonic start-up  
with pre-biased output.  
When VOUT is close to VIN, the Boost converter cannot  
support the duty cycle anymore. It enables its built-in  
Diode Mode which enables the converter to regulate  
the output voltage. When operating in Diode Mode, the  
converter's rectifier switch stops switching to regulate  
the output voltage. The efficiency during Diode Mode  
operation is reduced so that it is recommended that VIN  
Bootstrap Voltage (BOOT)  
A small ceramic capacitor between the BOOT pin and  
the SW pin provides gate current to charge the gate of  
the high-side MOSFET device during the on-time of  
each cycle and to charge the bootstrap capacitor. The  
value of this capacitor is recommended to be above  
0.1µF.  
be at least 1V lower than VOUT  
.
Hiccup Mode Short Protection (with Load  
Disconnect MOSFET)  
Device Functional Modes  
SGM6612A equips a hiccup protection mode. When the  
inductor current reaches the short-circuit protection  
limit threshold of 20A (TYP) or the output voltage is less  
than 70% of the normal output voltage (TYP), hiccup  
protection mode starts. In this mode, the device turns  
off for a 90ms (TYP) wait time. After the short-circuit  
The synchronous Boost converter SGM6612A operates  
at a constant frequency PWM mode in moderate to  
heavy load condition. The low-side N-MOSFET switch  
is turned on at the start of a cycle, and the inductor  
current increases to a peak current determined by the  
EA. After the peak current is reached, the current  
comparator trips, and it disables the low-side  
N-MOSFET switch and the inductor current goes  
through the body diode of the high-side N-MOSFET in  
a dead-time duration. After the dead-time duration, the  
high-side N-MOSFET switch is turned on. Because the  
output voltage is larger than the input voltage, the  
inductor current decreases. After a short dead-time  
duration, the low-side switch is turned on again and the  
switching cycle is repeated. To avoid sub-harmonic  
oscillation, the SGM6612A has internal slope  
compensation.  
condition is  
automatically.  
removed,  
the device recovers  
Over-Voltage Protection (OVP)  
The SGM6612A provides 21V (TYP) OVP threshold.  
The device stops switching immediately until the  
voltage at the VOUT pin drops 500mV below the  
output over-voltage protection threshold. The OVP  
circuitry monitors the output voltage (VOUT) and protects  
VOUT and SW from exceeding safe operating voltages.  
Thermal Shutdown  
To prevent thermal damage, the device has an internal  
temperature monitor. If the die temperature exceeds  
+155(TYP), the device stops switching. Once the  
temperature drops below +130(TYP), the device  
resumes operation.  
The device features a power-save PFM mode in light  
load condition. When the output load is reduced, the  
peak current is also decreasing but has a minimum  
value. When the load is further reduced and the peak  
current is clamped and cannot be reduced further, then  
the error amplifier output (COMP pin) will be low  
SG Micro Corp  
www.sg-micro.com  
JUNE 2022  
13  
20V, 10A Fully-Integrated Synchronous Boost  
Converter with Load Disconnect Control  
SGM6612A  
APPLICATION INFORMATION  
Typical Application  
The typical application is for 6V to 14V input, 16V output converter.  
CBOOT  
0.1μF  
L
BOOT  
3.3μH  
VIN  
M1  
VOUT2  
SW  
VIN  
VOUT  
COUT2_1  
22μF  
COUT2_2  
22μF  
COUT2_3  
22μF  
RUP  
1MΩ  
CIN1  
22μF  
COUT1_1  
10μF  
COUT1_2  
10μF  
RGATE  
150kΩ  
CGATE  
22nF  
VCC  
DISDRV  
FB  
CVCC  
RDOWN  
2.2μF  
80.6kΩ  
SGM6612A  
EN  
COMP  
FREQ  
RFREQ  
CC  
6.8nF  
348kΩ  
CP  
10pF  
RC  
ILIM  
15kΩ  
RLIM  
51.1kΩ  
AGND  
PGND  
Figure 5. SGM6612A Typical Application Circuit with 16V Output  
Design Requirements  
Table 1 shows the design parameters in this design.  
Table 1. Design Parameters  
Parameter  
Input Voltage Range  
Output Voltage  
Value  
6V to 14V  
16V  
Output Ripple Voltage  
Output Current Rating  
Operating Frequency  
±3%  
3A  
530kHz  
Table 2. Recommended Inductors for SGM6612A  
Saturation  
Current/Heat Rating Current (A)  
Size  
Part Number  
L (μH)  
DCR TYP (mΩ)  
Manufacturer  
(L × W × H mm3)  
5 × 10 × 4  
744325180  
74437368033  
1.8  
3.3  
3.3  
4.7  
6.8  
10  
3.5  
11.8  
12  
18  
23/8  
10/10  
15/8.5  
14  
Würth  
Würth  
10 × 10 × 3.8  
10.9 × 10 × 4  
10.9 × 10 × 3.8  
11 × 10 × 3.8  
11 × 10 × 3.8  
DFEH10040D-3R3M#  
PIMB104T-4R7MS  
74437368068  
Murata/TOKO  
Cyntec  
20.0  
17.5  
27  
Würth  
74437368100  
12.5  
Würth  
Table 3. Recommended Capacitors for SGM6612A  
Designator  
Qty  
Value  
Description  
Package  
Part Number  
Manufacturer  
CIN1, COUT2_1  
COUT2_2, COUT2_3  
,
4
22µF  
CAP, CERM, 22µF, 25V, ±10%, X5R, 1210  
CAP, CERM, 10µF, 25V, ±20%, X5R, 0603  
1210  
GRM32ER61E226KE15L  
Murata  
COUT1_1  
,
2
10µF  
0603  
GRM188R61E106MA73D  
Murata  
COUT1_2  
CBOOT  
CC  
1
1
1
0.1µF  
6.8nF  
2.2µF  
CAP, CERM, 0.1µF, 16V, ±10%, X5R, 0402  
CAP, CERM, 6.8nF, 25V, ±10%, X7R, 0402  
CAP, CERM, 2.2µF, 10V, ±20%, X5R, 0402  
0402  
0402  
0402  
GRM155R61C104KA88D  
GRM155R71E682KA01D  
GRM155R61A475MEAAD  
Murata  
Murata  
Murata  
CVCC  
SG Micro Corp  
www.sg-micro.com  
JUNE 2022  
14  
 
 
20V, 10A Fully-Integrated Synchronous Boost  
Converter with Load Disconnect Control  
SGM6612A  
APPLICATION INFORMATION (continued)  
Setting the Peak Current Limit  
Loop Stability and Compensation  
The peak current limit of the SGM6612A is set by an  
Table 4. Recommended L, RC and CC for Different Output  
Voltages and Frequencies  
external resistor. For setting a current limit of 13A, the  
resistor value is 56kΩ after calculation. Due to the  
distribution of the current limit, it is recommended to  
select a resistor about 10% less than the calculated  
value for safety. Here, 51.1kΩ resistor is a preferable  
choice.  
fSW (kHz)  
530  
VOUT (V)  
L (μH)  
1.8/3.3  
1.8/3.3  
1.2  
CC (nF)  
6.8  
6.8  
6.8  
2.2  
2.2  
2.2  
10  
RC ()  
20  
16  
5
15  
15  
5
530  
530  
2050  
2050  
2050  
240  
20  
16  
5
1.8  
50  
50  
20  
5
1.8  
0.68  
6.8  
Setting the Output Voltage  
The output voltage is set by a resistor divider network.  
Calculate the output voltage by Equation 4:  
20  
16  
5
240  
6.8  
10  
5
240  
3.3  
10  
2
RUP  
(4)  
VOUT = VFB × 1+  
RDOWN  
Selecting the Disconnect MOSFET  
The SGM6612A has a gate driver to control an external  
MOSFET. When the device shuts down or output shorts,  
it disconnects the output from the input, shown in  
Figure 7.  
where:  
VOUT is the output voltage.  
RUP is the top divider resistor.  
RDOWN is the bottom divider resistor.  
P-MOS  
VOUT  
For setting an output voltage of 16V, choose RDOWN to  
be about 80.6kΩ, calculated by Equation 4, and RUP is  
1MΩ.  
VOUT2  
COUT1  
CGATE VGS  
COUT2  
RGATE  
SGM6612A  
Selecting the Output Capacitors  
It is recommended to use 3 × 22μF X5R or X7R MLCC  
capacitors connected in parallel for most applications.  
Refer to Table 3.  
DISDRV  
With the connection of the load disconnect MOSFET,  
the output capacitor should be divided into two parts,  
shown in Figure 6. COUT2 should be no greater than 10  
× COUT1 to avoid the inrush current when the disconnect  
MOSFET is turned on.  
Figure 7. Load Disconnect MOSFET Connection  
VDS and IDS ratings and safe operating area (SOA)  
should be considered when MOSFET is selected.  
P-MOS  
The drain-to-source voltage rating should be larger  
VOUT  
VOUT2  
than the maximum output VDS_DIS_MAX = VOUT  
The drain-to-source RMS current rating is the  
maximum output current IDS_DIS_RMS = IOUT  
.
SGM6612A  
VGS  
CGATE  
COUT1  
COUT2  
RGATE  
.
Considering the SOA when the output is  
short-circuited, the short protection response time  
DISDRV  
and surge current can result in heat, SOA > QSHORT  
.
1
(5)  
QSHORT  
=
× VOUT ×ISHORT × tSHORT  
2
Figure 6. Output Capacitor Configuration with Load  
Disconnect MOSFET  
Selecting the Input Capacitors  
A 22μF input capacitor is enough for most applications.  
To reduce the input current ripple, larger values may  
also be allowed. See Table 3.  
SG Micro Corp  
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JUNE 2022  
15  
 
 
20V, 10A Fully-Integrated Synchronous Boost  
Converter with Load Disconnect Control  
SGM6612A  
APPLICATION INFORMATION (continued)  
where:  
(7)  
(8)  
VGATE = RGATE ×IDIS _PMOS  
VDS_DIS_MAX is the drain-source maximum voltage.  
IDS_DIS_RMS is the drain-source RMS current.  
ISHORT is the short current.  
VGATE  
RGATE  
=
IDIS _PMOS  
tSHORT is the response time before the short  
Given the 5V VGATE, the RGATE = 100kΩ.  
protection is triggered.  
QSHORT is the heat generated by the output short.  
Selecting the Bootstrap Capacitor  
A range of 0.047μF ~ 0.1μF capacitor is recommended for  
bootstrap capacitor. And 0.1μF is used in this design.  
Refer to Table 3.  
For instance: VOUT = 16V, ISHORT = 20A, tSHORT = 30μs.  
SOA ≥ 4.8mJ, VDS_DIS_MAX ≥ 16V.  
The CSD25404Q3-20V P-Channel Power MOSFET is  
recommended for this design example.  
VCC Capacitor  
The value of VCC capacitor should be at least 10 times  
larger than the value of CBOOT. A 1μF ~ 2.2μF capacitor  
value range is recommended for VCC capacitor. A value  
of 2.2μF is recommended in this example, please see  
Table 3.  
To reduce the turn-on speed, an additional capacitor is  
recommended to put between the gate and source of  
the external MOSFET.  
VTH_PMOS ×CGS _PMOS  
(6)  
tON_PMOS  
=
IDIS _PMOS  
Layout Guidelines  
where:  
As for all switching power supplies, especially those  
high frequency and high current ones, layout is an  
important design step. Poor layout could result in  
system instability, EMI failure, and device damage.  
Therefore, use wide and short traces for high current  
paths. Thus, place input capacitor as close to the VIN  
pin and GND pin as possible. If possible, choose higher  
capacitance value for CIN. The SW pin carries high  
current with fast rising and falling edges, therefore, all  
connections to the SW pin should be kept as short and  
wide as possible. The output capacitor COUT should be  
put close to VOUT. It is also beneficial to have the  
ground of COUT close to the GND pin since there is large  
ground return current flowing between them. Sensitive  
signals like FB, COMP traces must be placed away  
from SW trace. The ground of these signals should be  
connected to GND pin and separated with power  
ground.  
tON_P-MOS is the on-time of external MOSFET.  
VTH_P-MOS is the gate threshold of external MOSFET.  
CGS_P-MOS is the total gate capacitance between gate  
and source of external MOSFET (including the  
self-gate-source capacitance of the MOSFET).  
IDIS_P-MOS is a typical 55μA discharge current inside  
the device.  
Given VTH = 1.5V and CGS_P-MOS = 10nF, tON_P-MOS is  
about 300μs. It should be noted that the maximum  
turn-on time should be no more than 3ms, and the  
maximum capacitance CGS_P-MOS should be less than  
100nF. That is to say, if the disconnected MOSFET  
could not be turned on within the 3ms, the device would  
not start up normally.  
When selects the gate resistor, the gate-source voltage  
of the external MOSFET should be referenced.  
SG Micro Corp  
www.sg-micro.com  
JUNE 2022  
16  
20V, 10A Fully-Integrated Synchronous Boost  
Converter with Load Disconnect Control  
SGM6612A  
APPLICATION INFORMATION (continued)  
System Examples  
SGM6612A (14V Output, 2.7V to 4.4V Input)  
The schematic of a typical application circuit that is used for 14V output voltage from 2.7V to 4.4V input voltage of  
SGM6612A is given in Figure 8. The inductor has a minimum of 1.8μH for the 14V output.  
CBOOT  
0.1μF  
L
BOOT  
1.8μH  
VIN  
M1  
VOUT2  
SW  
VIN  
VOUT  
COUT2_1  
22μF  
COUT2_2  
22μF  
COUT2_3  
22μF  
RUP  
860kΩ  
CIN1  
22μF  
COUT1_1  
10μF  
COUT1_2  
10μF  
RGATE  
150kΩ  
CGATE  
22nF  
VCC  
DISDRV  
FB  
CVCC  
RDOWN  
2.2μF  
80.6kΩ  
SGM6612A  
EN  
COMP  
FREQ  
RFREQ  
CC  
6.8nF  
348kΩ  
CP  
10pF  
RC  
ILIM  
15kΩ  
RLIM  
51.1kΩ  
AGND  
PGND  
Figure 8. SGM6612A 14V Output Voltage from 2.7V to 4.4V Input Voltage  
SGM6612A without Load Disconnect Function  
The schematic of a typical application circuit that is used for 16V output voltage without load disconnect function of  
SGM6612A is given in Figure 9. Without the load disconnect MOSFET, the device has a simplified design and  
minimized external components.  
CBOOT  
0.1μF  
L
BOOT  
3.3μH  
VIN  
VOUT  
SW  
VIN  
VOUT  
COUT2_1  
22μF  
COUT2_2  
22μF  
COUT2_3  
22μF  
RUP  
1MΩ  
CIN1  
COUT1_1  
10μF  
22μF  
VCC  
CVCC  
2.2μF  
DISDRV  
FB  
RDOWN  
80.6kΩ  
SGM6612A  
EN  
COMP  
FREQ  
RFREQ  
CC  
6.8nF  
348kΩ  
CP  
10pF  
RC  
ILIM  
15kΩ  
RLIM  
51.1kΩ  
AGND  
PGND  
Figure 9. SGM6612A 16V Output Voltage without Load Disconnect Function  
SG Micro Corp  
www.sg-micro.com  
JUNE 2022  
17  
 
 
20V, 10A Fully-Integrated Synchronous Boost  
Converter with Load Disconnect Control  
SGM6612A  
REVISION HISTORY  
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.  
JUNE 2022 ‒ REV.A.2 to REV.A.3  
Page  
Updated Detailed Description and Application Information sections....................................................................................................... 10, 11, 13  
MAY 2021 ‒ REV.A.1 to REV.A.2  
Page  
Updated Electrical Characteristics section...........................................................................................................................................................4  
DECEMBER 2020 ‒ REV.A to REV.A.1  
Page  
Updated Package/Ordering Information section...................................................................................................................................................2  
Changes from Original (OCTOBER 2020) to REV.A  
Page  
Changed from product preview to production data.............................................................................................................................................All  
SG Micro Corp  
www.sg-micro.com  
JUNE 2022  
18  
PACKAGE INFORMATION  
PACKAGE OUTLINE DIMENSIONS  
TQFN-3×3.5-13L  
PIN 1#  
b
N13  
N1  
e
E
N9  
N5  
N8  
N6  
e1  
L
b
D
BOTTOM VIEW  
TOP VIEW  
0.7  
0.25  
A1  
N1  
N13  
0.25  
3.4  
0.5  
N9  
N5  
N6  
N8  
A2  
0.55  
3.2  
A
RECOMMENDED LAND PATTERN (Unit: mm)  
SIDE VIEW  
Dimensions In Millimeters  
Symbol  
MIN  
0.700  
0.000  
MOD  
0.750  
MAX  
0.800  
0.050  
A
A1  
A2  
b
0.020  
0.203 REF  
0.250  
0.200  
3.450  
2.950  
0.450  
0.300  
3.550  
3.050  
0.550  
D
3.500  
E
3.000  
L
0.500  
e
0.500 BSC  
0.550 BSC  
e1  
NOTE: This drawing is subject to change without notice.  
SG Micro Corp  
TX00166.001  
www.sg-micro.com  
PACKAGE INFORMATION  
TAPE AND REEL INFORMATION  
REEL DIMENSIONS  
TAPE DIMENSIONS  
P2  
P0  
W
Q2  
Q4  
Q2  
Q4  
Q2  
Q4  
Q1  
Q3  
Q1  
Q3  
Q1  
Q3  
B0  
Reel Diameter  
P1  
A0  
K0  
Reel Width (W1)  
DIRECTION OF FEED  
NOTE: The picture is only for reference. Please make the object as the standard.  
KEY PARAMETER LIST OF TAPE AND REEL  
Reel Width  
Reel  
Diameter  
A0  
B0  
K0  
P0  
P1  
P2  
W
Pin1  
Package Type  
W1  
(mm)  
(mm) (mm) (mm) (mm) (mm) (mm) (mm) Quadrant  
TQFN-3×3.5-13L  
13″  
12.4  
3.30  
3.80  
1.05  
4.0  
8.0  
2.0  
12.0  
Q2  
SG Micro Corp  
TX10000.000  
www.sg-micro.com  
PACKAGE INFORMATION  
CARTON BOX DIMENSIONS  
NOTE: The picture is only for reference. Please make the object as the standard.  
KEY PARAMETER LIST OF CARTON BOX  
Length  
(mm)  
Width  
(mm)  
Height  
(mm)  
Reel Type  
Pizza/Carton  
13″  
386  
280  
370  
5
SG Micro Corp  
www.sg-micro.com  
TX20000.000  

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