LT135 [SHARP]

Hall Voltage 240mV GaAs Hall Device; 霍尔电压的240mV砷化镓霍尔器件


型号：	LT135
厂家：	SHARP ELECTRIONIC COMPONENTS
描述：	Hall Voltage 240mV GaAs Hall Device 霍尔电压的240mV砷化镓霍尔器件
文件：	总2页 (文件大小：26K)
中文：	中文翻译
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Hall Device

LT135A

Hall Voltage 240mV GaAs Hall Device

LT135A

(Unit : mm)

■ Features

■ Outline Dimensions

Small temperature coefficient of the Hall voltage

Good linearity of the Hall voltage

Small imbalanced voltage

2.7±0.3

Directly DC voltage applicable

■ Applications

Brushless motors

VCR, CD, CD-ROM, FDD

Measuring equipment

Gauss meters, magnetic substance detectors

4-R0.2

Noncontact sensors

Microswitches, tape-end detection

Other magnetic detection

0.6

1.5±0.2

0.6

Terminal connection

1:V

2:V

3:V

4:V

Input

Output

Input

■ Absolute Maximum Ratings

=25˚C)

Unit

Output

Parameter

Control voltage

Symbol

Rating

˚C

Control current

Power dissipation

150

Operating temperature

Storage temperature

Soldering temperature^*1

opr

-20 to +125

-55 to +150

260

As for dimensions of tape-packaged products, refer to page 44 .

stg

sol

Soldering time : 10 seconds

■ Electrical Characteristics

a=25˚C)

Parameter

Symbol

Conditions

=6V, B=100mT

=6V, B=0mT

=1mA, B=0mT

MIN

200

-15

650

1 300

TYP.

240

800

1 600

MAX.

280

950

1 900

Unit

Ω

No-load Hall voltage ^*1

Imbalanced voltage

OUT

Input resistance

Output resistance

Ω

=6V, B=0mT, T

=-20˚C to 25˚C

=25˚C to 125˚C

Drift of imbalanced voltage vs. temperature

|∆VHO

Temperature coefficient of Hall voltage

Temperature coefficient of input resistance

Linearity of Hall voltage

=6mA, B=100mT, T

=1mA, B=0mT, T

=-20˚C, T =125˚C

-0.03

0.2

%/˚C

=-20˚C, T2=125˚C

IC=6mA, B1=50mT, B2=100mT

*1 No-load Hall voltage is nearly proportional to Vc (within the range of 1 to 6V) at temperatures of -20˚C to + 125˚C.

Keep the voltage within the allowable power dissipation range.

*2 Imbalanced ratio is in +/-12% within the range of Vc=1 to 6V.

=VM

-VHO

{R^IN(T

)}

)-V

(T1)}

β=

α=

X100

:Observed Hall voltage

HO:Imbalanced voltage

:Sensitivity

)

-T

)

2)-RIN(T

1)}

IN(T

)

-T

)-K

)+K

X2X100,

γ=

(IC

XB)

In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices

shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device spcification sheets before using any SHARP device.

Hall Device

LT135A

Fig. 1 Hall Voltage vs. Ambient

Temperature

Fig. 2 Input Resistance vs. Ambient

Temperature

2 000

1 600

1 200

800

B=100mT

300

B=0mT

I^M=1mA

250

V =6V

200

IC=6mA

150

100

400

-20

120

-20

120

Ambient temperature T

(˚C)

Ambient temperature Ta (˚C)

Fig. 3 Hall Voltage vs. Magnetic Flux

Density

Fig. 4 Hall Voltage vs. Control Current

600

VC=6V

1 600

B=100mT

=25˚C

T^a=25˚C

400

1 400

1 200

1 000

800

600

400

200

300

200

100

100 200 300 400 500 600

Magnetic flux density B (mT)

Control current IC (mA)

Fig. 6 Power Dissipation vs. Ambient

Temperature

Fig. 5 Hall Voltage vs. Control Voltage

200

160

120

B=100mT

Ta=25˚C

600

500

400

300

200

100

10 12

(V)

120

160

200

Control voltage V

Ambient temperature Ta (˚C)

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