PC12311YIP [SHARP]
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| 型号： | PC12311YIP |
| 厂家： | 
SHARP ELECTRIONIC COMPONENTS |
| 描述： | 暂无描述 输入元件 |
| 文件： | 总5页 (文件大小：64K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PC1231XNSZ Series
Low Input Current Type
Long Creepage Distance
Photocoupler
PC1231XNSZ Series
■ Features
■ Outline Dimensions
(Unit : mm)
1. Low input current type (IF=0.5mA)
2. High resistance to noise due to high common mode rejection
voltage (CMR:MIN. 10kV/µs)
Anode mark
Internal connection
diagram
3. Long creepage distance type
1
2
4
1
2
4
3
4. Standard 4-pin dual-in-line package
5. Isolation voltage (Viso : 5kVrms)
1 2 3 1
3
6.5±0.5
1
2
3
4
Anode
Cathode
Emitter
Collector
■ Applications
1. Home appliances
2. Programmable controllers
7.62±0.3
4.58±0.5
■ Rank Table
Model No.
Rank mark
Ic (mA)
Conditions
IF=0.5mA
VCE=5V
Ta=25°C
0.25 to 2.0
0.5 to 1.25
PC12310NSZ A or no mark
A
PC12311NSZ
Epoxy resin
0.5±0.1
■ Absolute Maximum Ratings
(Ta=25°C)
Unit
mA
θ
θ
Parameter
Symbol
Rating
10
θ : 0 to 13°
Forward current
*1 Peak forward current
Reverse voltage
Power dissipation
Collector-emitter voltage
Emitter-collector voltage
Collector current
Collector power dissipation
Total power dissipation
Operating temperature
IF
IFM
VR
200
6
mA
Input
V
mW
P
15
VCEO
VECO
IC
V
70
V
6
Output
50
mA
mW
mW
PC
150
170
Ptot
Topr
Tstg
Viso
Tsol
−30 to +100
−55 to +125
°C
°C
Storage temperature
*2 Isolation voltage
kVrms
°C
5
260
*3
Soldering temperature
*1 Pulse width<=100µs, Duty ratio=0.001
*2 40 to 60%RH, AC for 1 minute, f=60Hz
*3 For 10s
Notice
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP
devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.
Internet Internet address for Electronic Components Group http://www.sharp.co.jp/ecg/
PC1231XNSZ Series
■ Electro-optical Characteristics
(Ta=25°C)
Parameter
Symbol
Conditions
IF=10mA
MIN.
−
TYP.
1.2
−
MAX.
1.4
Unit
V
µA
pF
nA
V
Forward voltage
Reverse current
VF
IR
−
−
−
VR=4V
10
250
100
−
Terminal capacitance
Collector dark current
Collector-emitter breakdown voltage
Emitter-collector breakdown voltage
Collector current
Ct
V=0, f=1kHz
30
−
ICEO
BVCEO
BVECO
IC
VCE=50V, IF=0
IC=0.1mA, IF=0
IE=10µA, IF=0
IF=0.5mA, VCE=5V
IF=10mA, IC=1mA
DC500V, 40 to 60%RH
V=0, f=1MHz
−
−
70
6
−
V
0.25
−
5×1010
−
−
1011
0.6
4
mA
2.0
Collector-emitter saturation voltage
Isolation resistance
VCE (sat)
RISO
Cf
0.2
−
V
Ω
pF
−
Floating capacitance
1.0
18
18
Rise time
Response time
tr
−
−
µs
µs
VCE=2V, IC=2mA, RL=100Ω
Fall time
tf
3
Ta=25°C, RL=470Ω, VCM=1.5kV (peak),
IF=0mA, VCC=9V, Vnp=100mV
*1
−
kV/µs
Common mode rejection voltage
CMR
−
10
*1 Refer to Fig. 1
Fig.1 Test Circuit for Common Mode Rejection Voltage
(dV/dt)
VCM
1)
VCC
Vnp
Vcp
RL
Vnp
VO
VCM : High wave
pulse
RL=470Ω
CC=9V
(Vcp Nearly = dV/dt×Cf×RL)
VCM
1) Vcp : Voltage which is generated by displacement current in floating
capacitance between primary and secondary side.
V
Fig.2 Forward Current vs. Ambient
Temperature
Fig.3 Diode Power Dissipation vs. Ambient
Temperature
15
10
10
5
0
5
0
−30
0
25
50
75
100
125
−30
0
25
50
75
100
125
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
PC1231XNSZ Series
Fig.5 Total Power Dissipation vs. Ambient
Temperature
Fig.4 Collector Power Dissipation vs.
Ambient Temperature
200
200
150
100
170
150
100
50
0
50
0
−30
0
25
50
75
100
125
−30
0
25
50
75
100
125
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
Fig.6 Peak Forward Current vs. Duty Ratio
Fig.7 Forward Current vs. Forward Voltage
100
2000
1000
500
Pulse width <=100µs
Ta=25°C
10
200
100
50
Ta=25°C
Ta=100°C
Ta=0°C
Ta=75°C
Ta=50°C
1
Ta=−25°C
20
10
0.1
10−3
2
5
10−2
Duty ratio
2
5
10−1
2
5
1
0
0.5
1.0
1.5
2.0
5
Forward voltage VF (V)
Fig.8 Current Transfer Ratio vs. Forward
Current
Fig.9 Collector Current vs. Collector-emitter
Voltage
40
500
VCE=5V
Ta=25°C
Ta=25°C
PC (MAX.)
400
300
200
30
IF=7mA
20
IF=5mA
IF=3mA
10
IF=2mA
100
0
IF=1mA
IF=0.5mA
0
0
2
4
6
8
10
0.1
1
10
Collector-emitter voltage VCE (V)
Forward current IF (mA)
PC1231XNSZ Series
Fig.11 Collector - emitter Saturation Voltage
vs. Ambient Temperature
Fig.10 Relative Current Transfer Ratio vs.
Ambient Temperature
150
0.16
IF=10mA
IC=1mA
VCE=5V
0.14
IF=0.5mA
0.12
0.10
0.08
0.06
0.04
100
50
0
0.02
0
−30 −20 −10
0
10 20 30 40 50 60 70 80 90 100
−30 −20 −10
0
10 20 30 40 50 60 70 80 90 100
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
Fig.12 Collector Dark Current vs. Ambient
Temperature
Fig.13 Response Time vs. Load Resistance
10−5
1000
VCE=50V
VCE=2V
IC=2mA
Ta=25°C
10−6
10−7
10−8
10−9
100
tf
td
10
ts
tr
1
10−10
10−11
0.1
0.1
−30 −20 −10
0
10 20 30 40 50 60 70 80 90 100
1
10
Ambient temperature Ta (°C)
Load resistance RL (kΩ)
Fig.14 Response Time vs. Load Resistance
(Saturation)
Fig.15 Test Circuit for Response Time
1000
VCC
VCC=5V
IF=16mA
Ta=25°C
tf
RL
RD
Input
Input
Output
100
10
Output
10%
90%
ts
ts
tf
td
tr
td
1
tr
0.1
1
10
Load resistance RL (kΩ)
100
PC1231XNSZ Series
Fig.16 Voltage gain vs Frequency
Fig.17 Collector-emitter Saturation Voltage
vs. Forward Current
5
5
IC=7mA
Ta=25°C
VCE=2V
IC=5mA
IC=2mA
Ta=25°C
0
−5
4
IC=3mA
RL=10kΩ
IC=2mA
3
1kΩ
IC=1mA
−10
−15
IC=0.5mA
100Ω
2
1
0
−20
−25
0
2
4
6
8
10
0.1
1
10
Frequency f (kHz)
100
1000
Forward current IF (mA)
Fig.18 Reflow Soldering
Only one time soldering is recommended within the temperature
profile shown below.
230°C
200°C
180°C
25°C
10s
30s
2min
1min
1min
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